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Vishay Siliconix IRF540PBF-BE3
- Part No.:
- IRF540PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF540PBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 28A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:91
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Product details
Overview
IRF540PBF-BE3 from Vishay Siliconix is a 100 V, 28 A N-channel power MOSFET in TO-220AB package, featuring 0.077 Ω RDS(on) at VGS = 10 V, 72 nC total gate charge, and 175 °C maximum junction temperature - widely used in DC-DC converters, motor drives, and power supply switching stages.
For engineers reviewing the IRF540PBF-BE3 datasheet, IRF540PBF-BE3 pinout, IRF540PBF-BE3 application, or IRF540PBF-BE3 equivalent, key selection criteria include avalanche ruggedness (230 mJ single-pulse), fast switching (11 ns turn-on delay), dynamic dV/dt rating (5.5 V/ns), and RoHS-compliant/halogen-free construction per ordering code BE3.
Technical Context
This third-generation planar power MOSFET uses a vertical DMOS structure optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while internal body diode parameters (trr = 180–360 ns, Qrr = 1.3–2.8 μC) support synchronous rectification and freewheeling in hard-switched topologies.
The device's thermal design centers on low RthJC (1.0 °C/W) and high PD (150 W at TC = 25 °C), enabling direct mounting to heatsinks without isolation washers in industrial power stages. Repetitive avalanche rating (IAR = 28 A, EAR = 15 mJ) permits reliable operation under transient overvoltage conditions without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V bus systems with 2× safety margin against transients |
| RDS(on) | 0.077 Ω @ VGS = 10 V - limits conduction loss to ≤ 22 W at 17 A continuous drain current |
| Qg | 72 nC - determines gate driver power requirement (~0.72 mW per 10 kHz switching cycle) |
| ID (TC = 100 °C) | 20 A - defines usable current in thermally constrained enclosures without forced air |
| EAS | 230 mJ - enables safe energy absorption during unclamped inductive turn-off (e.g., relay or solenoid loads) |
| dV/dt | 5.5 V/ns - resists false triggering from high-slew-rate noise in motor drive half-bridges |
| TJ max | +175 °C - allows operation in sealed industrial environments up to ambient 125 °C with proper derating |
Pinout & Package
IRF540PBF-BE3 is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration, and 1.0 °C/W junction-to-case thermal resistance. Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; 11 nC gate-source charge enables fast turn-on with low driver loss |
| D (Drain) | High-side power terminal | Internally connected to metal tab; requires electrical isolation when mounted to heatsink unless system ground referenced |
| S (Source) | Power return / reference node | Serves as local ground for gate drive; source inductance (7.5 nH) impacts switching ringing in high-dI/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 28 A repetitive avalanche current and 15 mJ energy - eliminates need for external clamping in inductive load switching |
| Dynamic dV/dt rating | 5.5 V/ns immunity - prevents spurious turn-on in noisy half-bridge gate nodes without added RC snubbers |
| Fast switching | 11 ns turn-on delay + 44 ns rise time - enables >100 kHz operation in SMPS with minimal overlap loss |
| Ease of paralleling | Positive RDS(on) temperature coefficient - ensures current sharing stability across multiple devices without ballast resistors |
| Simple drive requirements | 2.0–4.0 V VGS(th) - compatible with microcontroller GPIO or dedicated gate drivers without level-shifting |
Applications
| DC-DC Buck Converter | Brushed DC Motor Drive |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V for vehicle auxiliary systems. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 100–200 kHz with 0.077 Ω RDS(on) minimizing conduction loss. Use Value: Enables ≥94% efficiency at 15 A output with <1.5 W conduction loss and no external avalanche protection required. | Use Scenario: H-bridge control of 24 V, 10 A brushed motors in industrial actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with integrated body diode recovery (trr ≤ 360 ns). Use Value: Eliminates need for external flyback diodes; 230 mJ EAS withstands stall-current surges without failure. |
| AC-DC PFC Front-End | Uninterruptible Power Supply (UPS) |
Use Scenario: Boost switch in active PFC stage for 1 kW server power supplies. IC Role / Device Role / Timing Role: Main switching transistor conducting 17 A RMS with 72 nC Qg defining gate driver sizing. Use Value: 175 °C TJ max and 1.0 °C/W RthJC allow compact heatsinking in high-density 1U chassis. | Use Scenario: Inverter-stage switch converting 48 V DC battery to 230 V AC output. IC Role / Device Role / Timing Role: Half-bridge leg device handling 28 A pulsed current and 110 A peak avalanche stress during grid fault events. Use Value: Repetitive avalanche rating (IAR = 28 A) ensures reliability during line-sag recovery without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK60ZFP | 600 V VDS, 10 A ID, 0.75 Ω RDS(on) - higher voltage, lower current, higher on-resistance | Designed for 400 V DC-link inverters; unsuitable for 48 V/20 A buck converters due to excessive conduction loss | Select only for high-voltage flyback or resonant LLC where 600 V rating is mandatory and current <10 A |
| FQP30N06L | 60 V VDS, 30 A ID, 0.023 Ω RDS(on) - lower voltage, higher current, lower on-resistance, logic-level gate | Optimized for 5–24 V systems; lacks 100 V margin and avalanche rating for industrial 48 V bus use | Prefer for battery-powered tools or automotive 12 V loads; avoid in mains-connected or high-transient environments |
Compared with STP10NK60ZFP and FQP30N06L, IRF540PBF-BE3 uniquely balances 100 V rating, 28 A capability, and 230 mJ avalanche energy - making it the only option among the three qualified for 48 V industrial motor drives requiring both voltage margin and ruggedness.
Availability
IRF540PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant/halogen-free construction.
Supply support for IRF540PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.
The IRF540 series belongs to Vishay's third-generation planar power MOSFET product line, engineered for high-efficiency switching in industrial power conversion, motor control, and power supply applications where avalanche capability and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRF540PBF-BE3 at 100 °C case temperature?
The IRF540PBF-BE3 supports 20 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 28 A rating at 25 °C, based on the device's 1.0 °C/W junction-to-case thermal resistance and 175 °C maximum junction temperature limit. Designers must ensure heatsink interface resistance and ambient conditions maintain TC ≤ 100 °C to sustain this current in IRF540PBF-BE3-based circuits.
Does IRF540PBF-BE3 have an integrated body diode, and what are its key recovery parameters?
Yes, IRF540PBF-BE3 includes an integral reverse p-n junction body diode. Its key recovery parameters are reverse recovery time trr = 180–360 ns and reverse recovery charge Qrr = 1.3–2.8 μC, measured at TJ = 25 °C, IF = 17 A, and dI/dt = 100 A/μs. These values enable reliable freewheeling in hard-switched topologies but require careful PCB layout to minimize ringing from source inductance (7.5 nH) in IRF540PBF-BE3 designs.
Is IRF540PBF-BE3 suitable for logic-level gate drive applications?
No - IRF540PBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, and it requires 10 V gate drive to achieve rated RDS(on) of 0.077 Ω. While it may weakly conduct at 5 V, full enhancement and low-loss operation demand a 10 V gate-source voltage. For true logic-level operation (≤4.5 V drive), alternative parts like FQP30N06L should be considered instead of IRF540PBF-BE3.
What does the "BE3" suffix indicate in IRF540PBF-BE3?
Per Vishay's ordering information, the "BE3" suffix in IRF540PBF-BE3 denotes lead (Pb)-free and halogen-free construction, compliant with both RoHS and JEDEC JS709A standards. It distinguishes this variant from the base IRF540PbF (Pb-free only) and confirms full halogen-free material content in mold compound, leads, and plating - critical for environmentally regulated industrial and automotive end equipment using IRF540PBF-BE3.
How does the avalanche rating of IRF540PBF-BE3 impact circuit protection design?
The IRF540PBF-BE3 is repetitively avalanche rated (IAR = 28 A, EAR = 15 mJ) and specifies 230 mJ single-pulse avalanche energy (EAS). This allows designers to eliminate external clamp circuits in inductive load switching (e.g., solenoids, relays) and tolerate brief overvoltage transients without failure. However, sustained avalanche operation still requires thermal management - IRF540PBF-BE3's 175 °C TJ max and 1.0 °C/W RthJC must be respected to avoid cumulative junction damage during repeated events.
IRF540PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 77mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF540PBF-BE3 FAQ
1.How can I place an order for IRF540PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF540PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF540PBF-BE3 reliable?
The price and inventory of IRF540PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF540PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF540PBF-BE3?
IRF540PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF540PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF540PBF-BE3?
For technical support, including IRF540PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540PBF-BE3 requirements.
6.How does Aetrix verify that IRF540PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF540PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF540PBF-BE3?
All IRF540PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF540PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF540PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF540PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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