My Inquiry
My Account
Vishay Siliconix IRF540STRRPBF
- Part No.:
- IRF540STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF540STRRPBF.pdf
- Description:
- MOSFET N-CH 100V 28A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,476
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF540STRRPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 28 A continuous drain current at TC = 25 °C, and 0.077 Ω RDS(on) at VGS = 10 V. It supports fast switching, repetitive avalanche operation, and 175 °C junction temperature-used in DC-DC converters, motor drives, and power supply output stages.
For engineers reviewing the IRF540STRRPBF datasheet, IRF540STRRPBF pinout, IRF540STRRPBF application, or IRF540STRRPBF equivalent, key selection criteria include its 72 nC total gate charge, 5.5 V/ns peak diode recovery dv/dt rating, avalanche energy capability (230 mJ single-pulse), and PCB-mount thermal resistance of 40 °C/W.
Technical Context
This MOSFET employs third-generation silicon technology optimized for low conduction loss and robust switching performance. Its D2PAK package enables high-current handling with low internal connection resistance and supports up to 2.0 W dissipation in typical surface-mount layouts.
The device features a built-in body diode with 2.5 V forward voltage at 28 A and 180–360 ns reverse recovery time, and is rated for unclamped inductive switching with 28 A avalanche current and 15 mJ repetitive avalanche energy under defined pulse conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage in high-side switch or bridge-leg applications |
| RDS(on) @ VGS = 10 V | 0.077 Ω - Enables ≤1.5 W conduction loss at 17 A, critical for thermal management in compact designs |
| Qg | 72 nC - Determines gate drive power requirement and switching speed in PWM circuits |
| ID (continuous, TC = 25 °C) | 28 A - Supports high-current loads such as BLDC motor phases or SMPS secondary-side rectification |
| EAS | 230 mJ - Specifies single-pulse unclamped inductive energy handling without failure |
| TJ max | 175 °C - Allows operation in harsh environments including industrial motor controls and automotive under-hood auxiliary supplies |
| dv/dt (diode recovery) | 5.5 V/ns - Limits parasitic turn-on risk during high-speed commutation in half-bridge topologies |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Dimensions per JEDEC TO-263AB outline: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H); recommended minimum PCB pad: 10.668 mm × 9.017 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Controls channel conduction; requires ≥10 V drive for full enhancement; input capacitance Ciss = 1700 pF affects drive loop stability |
| Pin 2 (D) | Drain | Main high-voltage terminal; electrically connected to exposed thermal pad; carries full load current and avalanche energy |
| Pin 3 (S) | Source | Reference node for gate drive; internal source inductance LS = 7.5 nH impacts switching waveform fidelity and shoot-through immunity |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 15 mJ per pulse - Enables reliable operation in inductive load switching without external snubbers |
| Dynamic dv/dt rating | 5.5 V/ns - Reduces risk of false turn-on during high di/dt transitions in bridge configurations |
| Fast switching | td(on) = 11 ns, tr = 44 ns - Supports >100 kHz PWM frequencies in high-efficiency power converters |
| 175 °C operating temperature | Rated junction temperature - Permits use in sealed enclosures or high-ambient industrial environments |
| Surface-mount D2PAK | Thermal resistance RthJC = 1.0 °C/W - Delivers superior heat transfer vs. TO-220 when mounted on copper-clad PCBs |
Applications
| DC-DC Buck Converter | Brushless DC Motor Phase Switch |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in telecom and server power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in fixed-frequency PWM topology. Use Value: Low 0.077 Ω RDS(on) minimizes conduction loss; 72 nC Qg enables efficient gate driving with standard MOSFET drivers. |
Use Scenario: 3-phase inverter stage driving 24–48 V BLDC motors in HVAC blowers and power tools. IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation with microcontroller-driven gate signals. Use Value: Repetitive avalanche rating handles back-EMF transients; 175 °C TJ supports sustained torque delivery under thermal stress. |
| Industrial AC-DC Power Supply | LED Driver Secondary-Side Switch |
Use Scenario: Output synchronous rectification in 100–200 W offline flyback or LLC resonant converters. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency. Use Value: Body diode VSD = 2.5 V at 28 A allows self-synchronized rectification; low Coss = 560 pF reduces switching loss at high frequency. |
Use Scenario: Constant-current switching element in isolated LED drivers for street lighting and commercial fixtures. IC Role / Device Role / Timing Role: Primary-side switch controlling transformer-coupled current regulation loop. Use Value: 100 V VDS accommodates reflected output voltage spikes; 230 mJ EAS withstands LED open-circuit transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK50ZFP | 500 V VDS, 10 A ID, higher RDS(on) (0.55 Ω), Zener-protected gate | Better suited for high-voltage flyback primary switches; not interchangeable in 100 V systems | Select only if higher breakdown voltage and integrated gate protection are required over current rating |
| IRFZ44NPBF | 55 V VDS, 49 A ID, lower RDS(on) (0.028 Ω), same D2PAK package | Optimized for 12–24 V battery-powered systems; insufficient for 100 V bus applications | Use where lower voltage and higher current dominate; not a drop-in replacement due to VDS limitation |
Compared with STP10NK50ZFP and IRFZ44NPBF, the IRF540STRRPBF uniquely balances 100 V rating, 28 A current capacity, and 0.077 Ω on-resistance in D2PAK-making it optimal for mid-voltage industrial power stages where both blocking capability and conduction efficiency are critical.
Availability
IRF540STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and industrial AC-DC power supplies requiring stable component supply and long-term manufacturability.
Supply support for IRF540STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF540STRRPBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for ruggedized switching in high-current, high-temperature power conversion systems.
FAQ
What is the maximum continuous drain current rating for IRF540STRRPBF at 100 °C case temperature?
The IRF540STRRPBF supports 20 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation without exceeding 175 °C junction temperature under steady-state conditions. The IRF540STRRPBF maintains stable RDS(on) performance across this range due to its positive temperature coefficient.
Does IRF540STRRPBF have a built-in body diode, and what are its key parameters?
Yes, the IRF540STRRPBF integrates a monolithic body diode with 28 A continuous forward current rating (IS) and 2.5 V forward voltage (VSD) at 28 A and 25 °C. Its reverse recovery time (trr) is 180–360 ns, and reverse recovery charge (Qrr) is 1.3–2.8 μC. These values are critical for evaluating commutation losses in synchronous rectifiers and half-bridge inverters using the IRF540STRRPBF.
Is IRF540STRRPBF RoHS-compliant and halogen-free?
Yes, IRF540STRRPBF is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document 99912. The "TRR" suffix and "PbF" designation confirm compliance with RoHS Directive 2011/65/EU and JEDEC JS709B standards. Full compliance documentation, including test reports and substance declarations, is available through Vishay's official portal for the IRF540STRRPBF.
What is the thermal resistance from junction to case (RthJC) for IRF540STRRPBF?
The IRF540STRRPBF has a maximum junction-to-case (drain) thermal resistance of 1.0 °C/W, measured from die junction to the exposed drain pad. This low value enables efficient heat transfer to heatsinks or copper planes in PCB-mounted applications. When used with recommended 1" square FR-4 mounting, the IRF540STRRPBF achieves RthJA = 40 °C/W-critical for thermal design in space-constrained industrial power modules.
Can IRF540STRRPBF be paralleled with identical units for higher current handling?
Yes, the IRF540STRRPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. Layout best practices-including matched gate trace lengths, Kelvin source connections, and symmetrical power routing-are required to ensure balanced dynamic current distribution. Parallel operation of IRF540STRRPBF units is validated in Vishay's application notes for high-current motor drive inverters.
IRF540STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 77mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF540STRRPBF FAQ
1.How can I place an order for IRF540STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF540STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF540STRRPBF reliable?
The price and inventory of IRF540STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF540STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF540STRRPBF?
IRF540STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF540STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF540STRRPBF?
For technical support, including IRF540STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540STRRPBF requirements.
6.How does Aetrix verify that IRF540STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF540STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF540STRRPBF?
All IRF540STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF540STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF540STRRPBF part is unused and in its original packaging.
Return procedure for IRF540STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF540STRRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
