My Inquiry
My Account
Infineon Technologies IRF5810TRPBF
- Part No.:
- IRF5810TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
IRF5810TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 2.9A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,512
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF5810TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET power MOSFET in TSOP-6 package, rated for -20 V VDS, 90 mΩ RDS(on) at VGS = -4.5 V and ID = -2.9 A, with integrated body diode and low gate charge (6.4 nC typ). It serves as a compact, high-efficiency load switch in portable battery-powered systems.
For engineers reviewing the IRF5810TRPBF datasheet, IRF5810TRPBF pinout, IRF5810TRPBF application, or IRF5810TRPBF equivalent, key selection criteria include its dual-die TSOP-6 footprint, -2.9 A continuous drain current at 25°C, ultra-low RDS(on), thermal resistance of 130°C/W, and suitability for space-constrained DC-DC load switching and battery protection circuits.
Technical Context
This device implements two independent P-channel MOSFETs in a single surface-mount TSOP-6 package, sharing no internal connection-each die has dedicated source, drain, and gate terminals. Its gate threshold voltage (-0.45 to -1.2 V) enables direct logic-level drive from 3.3 V or 5 V controllers without level shifting.
The MOSFETs feature low input capacitance (650 pF Ciss) and fast switching (tr = 14 ns, tf = 53 ns), optimized for high-frequency load switching up to ~1 MHz. The body diode exhibits VSD = -1.2 V at -1.0 A and trr = 110–170 ns, supporting synchronous rectification and reverse-current blocking in bidirectional power paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-side load switching in 12 V or lower systems |
| RDS(on) | 90 mΩ @ VGS = -4.5 V, ID = -2.9 A - Enables <100 mW conduction loss at 1 A, critical for thermal management in sealed enclosures |
| ID (25°C) | -2.9 A - Continuous current per channel at room temperature, sufficient for USB-C PD load switches and smart e-fuse designs |
| Qg | 6.4 nC (typ) - Low gate drive energy reduces controller output stage stress and enables use with low-power GPIOs |
| RθJA | 130 °C/W - Thermal limit defines maximum ambient temperature for 0.96 W dissipation on standard 1-in² Cu PCB |
| VGS(th) | -0.45 to -1.2 V - Ensures reliable turn-on with 3.3 V logic, eliminating need for external gate drivers in many applications |
| Ciss | 650 pF - Limits high-frequency gate drive current demand and EMI generation during fast transitions |
Pinout & Package
IRF5810TRPBF uses a 6-pin TSOP-6 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows standard TSOP-6 top-view orientation (pin 1 marked).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires ≤±12 V drive |
| Pin 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to system ground or negative rail in high-side configuration |
| Pin 3 (D1) | Drain of Channel 1 | Switched output for Channel 1; connects to load or battery anode in load-switch topology |
| Pin 4 (D2) | Drain of Channel 2 | Independent switched output for second MOSFET; enables dual-load or redundant path control |
| Pin 5 (S2) | Source of Channel 2 | Separate source node for Channel 2; allows independent grounding or rail referencing |
| Pin 6 (G2) | Gate of Channel 2 | Second independent gate input; supports asynchronous or mirrored control of both channels |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent P-channel MOSFETs | Two fully isolated devices in one TSOP-6 footprint-replaces two SOT-23s, saving >40% board area |
| Ultra-low RDS(on) | 90 mΩ @ -4.5 V - Reduces I²R losses by >30% vs. comparable -20 V P-MOSFETs at same current |
| Low gate charge | 6.4 nC typical - Enables clean 100 kHz–1 MHz switching with minimal gate driver power consumption |
| Logic-level compatible | VGS(th) down to -0.45 V - Guarantees full enhancement with 3.3 V microcontroller outputs without level shifters |
| Lead-free & halogen-free | Meets IPC/JEDEC J-STD-020 and RoHS Directive 2011/65/EU - Qualified for industrial and consumer production |
Applications
| Battery Protection Circuit | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: Preventing reverse current flow and over-discharge in dual-cell Li-ion packs. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET used as back-to-back switch to block bidirectional fault currents and enable controlled charge/discharge sequencing. Use Value: 90 mΩ RDS(on) limits voltage drop to <30 mV at 300 mA, preserving battery gauge accuracy and runtime. | Use Scenario: Enabling/disabling VBUS power delivery in portable USB-C accessories. IC Role / Device Role / Timing Role: High-side load switch controlling 5 V/20 V VBUS path with fast turn-on (<10 µs) and soft-start capability via gate RC. Use Value: Low Qg (6.4 nC) ensures minimal inrush current and avoids VBUS droop during hot-plug events. |
| Smart E-Fuse for Industrial Sensors | Redundant Power Path Controller |
Use Scenario: Providing overcurrent and short-circuit protection for 24 V fieldbus sensor nodes. IC Role / Device Role / Timing Role: Current-sense enabled load switch using external shunt and comparator; MOSFET acts as programmable current limiter. Use Value: -20 V rating and -2.9 A continuous current support safe operation across 12–24 V industrial rails with margin. | Use Scenario: Selecting between primary and backup power sources in medical monitoring equipment. IC Role / Device Role / Timing Role: Two independent P-MOSFETs implement OR-ing function with independent enable control and fault isolation. Use Value: Separate G/S/D pins per channel allow true redundancy-failure in one channel does not compromise the other. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI3486DV-T1-GE3 | RDS(on) = 110 mΩ @ -4.5 V; higher Qg (9.5 nC); same TSOP-6 package | Slightly higher conduction loss; less suitable for high-current (>2 A) or high-frequency (>500 kHz) use | Prefer when cost sensitivity outweighs efficiency or switching speed requirements |
| DMC3025LSD-13 | Single-channel only; RDS(on) = 25 mΩ @ -4.5 V; SO-8 package; higher current rating (-12 A) | Not pin-compatible; requires two units for dual functionality; larger footprint but superior thermal performance | Select when higher current per channel or better thermal dissipation is required over space savings |
Compared with SI3486DV-T1-GE3 and DMC3025LSD-13, IRF5810TRPBF uniquely balances dual-channel integration, ultra-low RDS(on), and logic-level drive in a minimal footprint-making it optimal for space-constrained, battery-operated systems where board area and gate drive simplicity are critical.
Availability
IRF5810TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery load switching, and smart e-fuse implementations requiring stable component supply and long-term manufacturability.
Supply support for IRF5810TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions for automotive, industrial, and consumer markets.
The IRF5810TRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in portable and battery-powered electronics.
FAQ
Is IRF5810TRPBF suitable for high-side load switching in 12 V automotive applications?
No. Its -20 V VDS rating provides only 2 V margin above nominal 12 V systems, and it is not AEC-Q101 qualified. Transient loads (e.g., load dump) can exceed 24 V, risking avalanche failure. Use automotive-grade -40 V or -60 V P-MOSFETs instead.
Can both channels be paralleled to increase current capacity?
No. The two MOSFETs share no internal thermal or electrical coupling, and mismatched RDS(on) and gate thresholds cause unequal current sharing. Parallel operation requires matched dies, external current balancing, and derating-neither recommended nor characterized for this part.
What is the maximum operating frequency for PWM switching with IRF5810TRPBF?
Based on tr = 14 ns and tf = 53 ns, practical PWM operation is supported up to ~1 MHz with appropriate gate drive strength (≤10 Ω series resistance) and layout optimization. Above 500 kHz, switching losses dominate, requiring careful thermal design.
Does IRF5810TRPBF include integrated ESD protection on gate terminals?
No. The datasheet specifies no built-in gate oxide ESD protection. External 10 kΩ series resistors and/or TVS diodes are recommended on gate traces to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV, especially in manual assembly environments.
IRF5810TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650pF @ 16V
- Power - Max:
- 960mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
IRF5810TRPBF FAQ
1.How can I place an order for IRF5810TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5810TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5810TRPBF reliable?
The price and inventory of IRF5810TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5810TRPBF is usually 5 days.
3.What payment methods are accepted for IRF5810TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5810TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5810TRPBF?
IRF5810TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5810TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5810TRPBF?
For technical support, including IRF5810TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5810TRPBF requirements.
6.How does Aetrix verify that IRF5810TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF5810TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5810TRPBF meets industry standards.
7.What is the process for return or replacement of IRF5810TRPBF?
All IRF5810TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5810TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5810TRPBF part is unused and in its original packaging.
Return procedure for IRF5810TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF5810TRPBF Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
