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Infineon Technologies IRF5850
- Part No.:
- IRF5850
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
IRF5850.pdf
- Description:
- MOSFET 2P-CH 20V 2.2A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,811
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Product details
Overview
IRF5850 from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -20 V VDS, 0.135 Ω RDS(on) at -4.5 V VGS, and -2.2 A continuous drain current at 25°C. It integrates two independent MOSFETs for compact load switching in portable battery-powered systems.
For engineers reviewing the IRF5850 datasheet, IRF5850 pinout, IRF5850 application, or IRF5850 equivalent, key selection criteria include its ultra-low RDS(on), dual-die thermal efficiency, body diode reverse recovery performance (trr = 23–35 ns), and TSOP-6 footprint compatibility with space-constrained PCB layouts.
Technical Context
The IRF5850 implements two independent P-channel silicon MOSFETs fabricated using HEXFET process technology, enabling matched on-resistance and gate charge characteristics across both channels. Its design targets high-efficiency DC load switching where low conduction loss and fast turn-off are critical.
Thermal performance is optimized via direct die attachment to the exposed leadframe in the TSOP-6 package, achieving 130°C/W junction-to-ambient resistance. The integrated body diodes support bidirectional current handling with specified VSD = -1.2 V and Qrr = 7.7–12 nC under defined di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for P-channel load switch in negative-rail configurations |
| RDS(on) | 0.135 Ω @ VGS = -4.5 V, ID = -2.2 A - Enables <150 mW conduction loss at full rated current |
| ID (cont) | -2.2 A @ TA = 25°C - Sustained current capability without derating in ambient-cooled designs |
| Qg | 3.6–5.4 nC - Low gate charge supports efficient 1–2 MHz PWM switching with minimal driver power |
| trr | 23–35 ns - Fast body diode recovery reduces switching losses in synchronous rectification |
| RθJA | 130 °C/W - Thermal resistance defines maximum power dissipation on standard FR-4 PCB without heatsink |
| VGS(th) | -0.45 to -1.2 V - Threshold range ensures reliable turn-on with logic-level gate drive down to -2.5 V |
Pinout & Package
TSOP-6 surface-mount package with exposed thermal pad (non-electrical); dual-channel layout enables independent control of two loads in one footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 / Drain 1 / Gate 1 | Channel 1 terminals: Source tied to common ground or negative rail; drain connects to load; gate accepts logic-level P-channel drive |
| 4, 5, 6 | Source 2 / Drain 2 / Gate 2 | Channel 2 terminals: Electrically isolated from Channel 1; identical pinout symmetry enables mirrored layout routing |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched MOSFETs in single TSOP-6 package reduce board area by ~40% vs. discrete SOT-23 pair |
| Ultra-low RDS(on) | 0.135 Ω at -4.5 V enables <0.3 W total conduction loss across both channels at 1 A each |
| Low gate charge | Qg ≤ 5.4 nC minimizes gate driver current demand and switching energy loss |
| Fast body diode recovery | trr ≤ 35 ns and Qrr ≤ 12 nC support efficient synchronous buck or OR-ing applications |
Applications
| Battery Protection Circuit | Load Switching in Wearables |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back switch to block reverse current and enable/disconnect charging path. Use Value: 0.135 Ω RDS(on) limits voltage drop to <135 mV at 1 A, preserving battery runtime and thermal margin. | Use Scenario: Controlled power-up/down sequencing of sensors and radios in compact wearable devices. IC Role / Device Role / Timing Role: Independent channel gating isolates subsystems during sleep mode to eliminate leakage paths. Use Value: Dual-channel TSOP-6 saves >2 mm² PCB area versus two SOT-23 devices while maintaining thermal headroom. |
| USB OTG Power Switching | Industrial Sensor Node Power Management |
Use Scenario: Bidirectional 5 V power path control between host and peripheral in USB On-The-Go interfaces. IC Role / Device Role / Timing Role: P-MOSFET pair manages VBUS sourcing/sinking with body diode conduction during role swap. Use Value: Specified trr = 23–35 ns and Qrr = 7.7–12 nC prevent shoot-through during fast polarity transitions. | Use Scenario: Remote field sensor nodes powered by 12 V industrial bus with intermittent wireless transmission. IC Role / Device Role / Timing Role: High-side switch controls power to RF module and ADC to extend battery life between readings. Use Value: -20 V rating and -55 to +150 °C operating range ensure reliability in unregulated industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7957DP | RDS(on) = 0.125 Ω @ -4.5 V but higher Qg = 7.5 nC; TSOP-6 pinout identical | Higher gate drive power required; better conduction loss at same current | Prefer when minimizing I²R loss dominates over switching frequency constraints |
| DMC3025LSD | RDS(on) = 0.115 Ω @ -4.5 V; dual N-channel, requiring level-shifting gate drive | Requires external high-side driver circuitry; not drop-in compatible | Choose only if system already uses N-channel high-side drivers and needs lowest possible RDS(on) |
Compared with Si7957DP and DMC3025LSD, the IRF5850 offers the best balance of low gate charge (≤5.4 nC), proven thermal performance in TSOP-6, and true logic-level P-channel operation without auxiliary circuitry-making it optimal for space- and power-constrained battery management.
Availability
IRF5850 is available at Aetrix Electronics and suitable for battery protection circuits, wearable load switching, USB OTG power control, and industrial sensor node power management requiring stable component supply and long-term lifecycle support.
Supply support for IRF5850 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF5850 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC load switching in portable and battery-powered systems.
FAQ
What is the maximum safe operating voltage for IRF5850 in continuous DC operation?
The IRF5850 has a guaranteed VDS rating of -20 V, meaning it can safely block up to 20 V in reverse polarity across drain and source under all operating temperatures and conditions. Exceeding this voltage risks avalanche breakdown and permanent device failure, even with current limiting.
Can IRF5850 be used in synchronous rectification topologies?
Yes-the IRF5850's body diode exhibits trr = 23–35 ns and Qrr = 7.7–12 nC, enabling use in low-frequency synchronous rectification (e.g., ≤500 kHz DC/DC converters). However, its RDS(on) is optimized for switching rather than conduction-only roles, so efficiency gains depend on duty cycle and load current.
Is the TSOP-6 package thermally enhanced, and how should it be mounted?
Yes-the TSOP-6 package features an exposed copper thermal pad on the bottom side that must be soldered to a dedicated PCB copper pour for effective heat transfer. Without thermal pad connection, RθJA degrades from 130°C/W to >200°C/W, risking thermal runaway above 0.5 W dissipation.
Does IRF5850 require gate resistors for EMI suppression in switching applications?
Gate resistors (typically 10–47 Ω) are recommended to dampen ringing caused by gate-drain capacitance (Crss = 40 pF) and PCB trace inductance. Omitting them may cause overshoot exceeding ±12 V VGS rating or induce false turn-on due to Miller coupling during fast dV/dt transitions.
IRF5850 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 320pF @ 15V
- Power - Max:
- 960mW
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
IRF5850 FAQ
1.How can I place an order for IRF5850 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5850 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5850 reliable?
The price and inventory of IRF5850 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5850 is usually 5 days.
3.What payment methods are accepted for IRF5850?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5850 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5850?
IRF5850 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5850 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5850?
For technical support, including IRF5850 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5850 requirements.
6.How does Aetrix verify that IRF5850 is sourced from the original manufacturer or authorized distributors?
All IRF5850 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5850 meets industry standards.
7.What is the process for return or replacement of IRF5850?
All IRF5850 units undergo pre-shipment inspection (PSI). If there is an issue with IRF5850, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5850 part is unused and in its original packaging.
Return procedure for IRF5850:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF5850 Tags
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2N7002DWH6327XTSA1
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