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Infineon Technologies IRF5850TR
- Part No.:
- IRF5850TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
IRF5850TR.pdf
- Description:
- MOSFET 2P-CH 20V 2.2A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,811
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Product details
Overview
IRF5850TR from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in a TSOP-6 surface-mount package, rated for -20 V VDS, 0.135 Ω RDS(on) at -4.5 V VGS, and -2.2 A continuous drain current at 25°C. It integrates two independent MOSFETs for compact load switching in battery-powered portable electronics.
For engineers reviewing the IRF5850TR datasheet, IRF5850TR pinout, IRF5850TR application, or IRF5850TR equivalent, key selection criteria include its ultra-low on-resistance per unit area, dual-die thermal efficiency in TSOP-6, body diode recovery performance (trr = 23–35 ns), and gate charge profile (Qg = 3.6–5.4 nC) for high-frequency DC-DC and power-path control.
Technical Context
This device implements two independent P-channel silicon MOSFETs fabricated using HEXFET process technology to minimize RDS(on) and gate charge. Its dual-die TSOP-6 layout enables space-constrained PCB designs while maintaining separate source, drain, and gate terminals for each channel.
The integrated body diodes exhibit low forward voltage (-1.2 V at -0.96 A) and fast reverse recovery (Qrr = 7.7–12 nC), supporting synchronous rectification and bidirectional load control. Thermal resistance is specified at 130 °C/W (junction-to-ambient, FR-4 board), with derating starting above 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for P-channel load-switching in 3.3 V/5 V systems |
| RDS(on) | 0.135 Ω @ VGS = -4.5 V - Enables <100 mW conduction loss at 2.2 A, critical for battery runtime |
| ID (25°C) | -2.2 A - Continuous current capability per channel under standard ambient conditions |
| Qg | 3.6–5.4 nC - Low total gate charge supports efficient 1–2 MHz PWM switching with minimal driver effort |
| trr | 23–35 ns - Fast body diode recovery reduces switching losses in buck and OR-ing applications |
| RθJA | 130 °C/W - Thermal limit defines maximum power dissipation (0.96 W at 25°C) on standard FR-4 |
| VGS(th) | -0.45 to -1.2 V - Threshold range ensures reliable turn-on with logic-level gate drive (e.g., 3.3 V GPIO) |
Pinout & Package
TSOP-6 package: 1.5 mm × 3.0 mm footprint, 0.65 mm pitch, exposed drain pad for thermal enhancement. Dual-channel layout with shared package thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires logic-compatible negative bias |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; connects to system ground or higher-potential rail |
| 3 (D1) | Drain of Channel 1 | Switched output node; ties to load anode in high-side configuration |
| 4 (D2) | Drain of Channel 2 | Second switched output; electrically isolated from D1 but thermally coupled via shared drain pad |
| 5 (S2) | Source of Channel 2 | Independent source node; enables dual-rail or redundant load control |
| 6 (G2) | Gate of Channel 2 | Separate gate terminal for independent PWM or enable control of second channel |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel MOSFETs in single TSOP-6 | Replaces two SOT-23 devices, saving >40% PCB area while maintaining independent gate control |
| Ultra-low RDS(on) | 0.135 Ω at -4.5 V enables <0.66 W conduction loss per channel at full rated current |
| Low Qg and Qgd | 5.4 nC total / 0.83 nC Miller charge minimizes switching energy and improves EMI behavior |
| Fast body diode recovery | 35 ns max trr and 12 nC Qrr support efficient synchronous rectification up to 1 MHz |
| Extended temperature range | -55°C to +150°C operation allows deployment in automotive cabin and industrial edge nodes |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as back-to-back switch for bidirectional fault isolation. Use Value: 0.135 Ω RDS(on) limits voltage drop across protection FETs, preserving battery capacity and enabling accurate current sensing. | Use Scenario: VBUS sourcing/sinking control and dead-time management in USB PD sink implementations. IC Role / Device Role / Timing Role: Independent gate control enables precise sequencing of power-path FETs during PDO negotiation and fault events. Use Value: Low Qg (5.4 nC) and fast trr (35 ns) reduce transition losses during dynamic load steps and cable insertion events. |
| Load Switch for IoT Sensors | Redundant Power OR-ing |
Use Scenario: Controlled power-up/down of low-power sensor subsystems in always-on edge nodes. IC Role / Device Role / Timing Role: Each channel independently switches 3.3 V or 5 V rails to discrete sensor clusters. Use Value: -0.45 V minimum VGS(th) ensures reliable turn-on with 3.3 V microcontroller GPIO, eliminating level-shifter need. | Use Scenario: Seamless switchover between primary and backup power supplies in telecom and server PSUs. IC Role / Device Role / Timing Role: Dual P-MOSFETs implement ideal diode function with active gate control for zero forward-drop OR-ing. Use Value: Matched RDS(on) and thermal coupling between channels ensure balanced current sharing and prevent thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.115 Ω @ -4.5 V; lower Qg (4.5 nC); SO-8 package (larger footprint) | Higher current density but requires more PCB area and lacks TSOP-6 thermal advantage | Preferred when board space permits and lower conduction loss outweighs thermal packaging benefits |
| DMC3025LSD-13 | RDS(on) = 0.025 Ω @ -4.5 V; dual N-channel; requires high-side gate driver | Superior RDS(on) but adds complexity for high-side drive and polarity inversion | Select only when system already includes dedicated gate drivers and needs sub-30 mΩ on-resistance |
Compared with Si7851DP and DMC3025LSD, the IRF5850TR delivers optimal balance of ultra-compact TSOP-6 packaging, logic-level P-channel operation, and proven thermal performance in space-constrained battery management-without requiring external gate drive circuitry.
Availability
IRF5850TR is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery modules, IoT sensor load switching, and redundant power OR-ing requiring stable component supply and long-term industrial availability.
Supply support for IRF5850TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon MOSFET design and manufacturing.
The IRF5850TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and battery-load management in portable and embedded systems.
FAQ
What is the maximum safe operating voltage for IRF5850TR in continuous DC operation?
The IRF5850TR has a guaranteed VDS rating of -20 V, meaning it can safely block up to 20 V in reverse polarity across drain and source under continuous DC conditions. Operation beyond this voltage risks avalanche breakdown or permanent damage, even with gate driven. Derating is recommended for reliability in noisy environments or with transient spikes.
Can IRF5850TR be used with 3.3 V microcontroller GPIO without a level shifter?
Yes. With a VGS(th) range of -0.45 V to -1.2 V and RDS(on) fully specified at -4.5 V, the IRF5850TR achieves usable on-resistance at -3.3 V gate drive. Measured RDS(on) at -3.3 V is approximately 0.18 Ω, supporting ~1.8 A continuous current-sufficient for most low-power load-switching applications.
How does the TSOP-6 package affect thermal performance compared to SO-8?
The TSOP-6 package offers superior thermal resistance per unit area due to its thinner profile and optimized copper leadframe. While RθJA is 130 °C/W on FR-4, its RθJC (junction-to-case) is significantly lower than SO-8 equivalents, enabling better heat transfer to PCB copper pours. This makes it especially effective in thin-profile portable designs where airflow is limited.
Is the body diode in IRF5850TR suitable for synchronous rectification?
Yes. The integrated body diode has a forward voltage of -1.2 V at -0.96 A and reverse recovery time of 23–35 ns, making it suitable for synchronous rectification in buck converters up to ~1 MHz. However, for highest efficiency, external Schottky diodes or actively controlled N-MOSFETs may still outperform it in high-current, high-frequency designs.
IRF5850TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 320pF @ 15V
- Power - Max:
- 960mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
IRF5850TR FAQ
1.How can I place an order for IRF5850TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5850TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5850TR reliable?
The price and inventory of IRF5850TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5850TR is usually 5 days.
3.What payment methods are accepted for IRF5850TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5850TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5850TR?
IRF5850TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5850TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5850TR?
For technical support, including IRF5850TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5850TR requirements.
6.How does Aetrix verify that IRF5850TR is sourced from the original manufacturer or authorized distributors?
All IRF5850TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5850TR meets industry standards.
7.What is the process for return or replacement of IRF5850TR?
All IRF5850TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF5850TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5850TR part is unused and in its original packaging.
Return procedure for IRF5850TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF5850TR Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
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UM6K34NTCN
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DMG6601LVT-7
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