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Infineon Technologies IRF5850TRPBF
- Part No.:
- IRF5850TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
IRF5850TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 2.2A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,866
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Product details
Overview
IRF5850TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -20 V VDS, 0.135 Ω RDS(on) at VGS = -4.5 V and ID = -2.2 A, with integrated body diodes and low gate charge (Qg = 3.6 nC typ). It enables compact high-efficiency load switching in portable battery-powered systems.
For engineers reviewing the IRF5850TRPBF datasheet, IRF5850TRPBF pinout, IRF5850TRPBF application, or IRF5850TRPBF equivalent, key selection criteria include its dual-channel P-MOS topology, thermal resistance (RθJA = 130 °C/W), pulsed current capability (-9.0 A), and lead-free/halogen-free TSOP-6 footprint optimized for space-constrained PCB layouts.
Technical Context
This device integrates two identical P-channel HEXFET power MOSFETs in a single TSOP-6 package, sharing source terminals internally to support dual independent high-side switch configurations. Its gate threshold voltage range (-0.45 V to -1.2 V) ensures reliable turn-on with standard logic-level drive down to -2.5 V.
Designed for bidirectional load control and reverse-polarity protection, it features low RDS(on) temperature coefficient (0.011 V/°C), fast switching (tr = 14 ns, tf = 28 ns), and body diode parameters validated at -0.96 A (VSD = -1.2 V, trr = 23–35 ns).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for high-side switch placement in ≤20 V rail systems. |
| RDS(on) | 0.135 Ω @ VGS = -4.5 V, ID = -2.2 A - Enables <150 mW conduction loss per channel at full rated current. |
| ID (cont) | -2.2 A @ TA = 25°C - Sustained current per channel without derating; supports dual 2.2 A loads in same footprint as one SOT-23. |
| Qg | 3.6 nC (typ) - Low total gate charge reduces driver power demand and enables efficient 1 MHz-class switching. |
| RθJA | 130 °C/W - Thermal resistance measured on FR-4 board; defines maximum power dissipation before junction exceeds 150°C. |
| VGS(th) | -0.45 to -1.2 V - Ensures guaranteed turn-on with -2.5 V logic signals and stable operation across temperature. |
| tr/tf | 14 ns / 28 ns - Fast edge rates minimize switching losses in DC-DC and load-switching applications. |
Pinout & Package
TSOP-6 surface-mount package (3.05 mm × 1.6 mm × 1.0 mm), thermally enhanced with exposed drain pad. Dual die configuration shares Source (S) pins (pins 2 & 5); Gate (G) and Drain (D) are independently accessible per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate 1 (G1) | Controls first P-MOS channel; accepts logic-level negative gate drive relative to source. |
| Pin 2 | Source 1 (S1) | Common source node for Channel 1; electrically tied to Pin 5 for dual-source configuration. |
| Pin 3 | Drain 1 (D1) | High-side output terminal for Channel 1; connects to load supply rail. |
| Pin 4 | Drain 2 (D2) | High-side output terminal for Channel 2; independent of D1 for dual-load isolation. |
| Pin 5 | Source 2 (S2) | Common source node for Channel 2; internally bonded to Pin 2 for shared-source operation. |
| Pin 6 | Gate 2 (G2) | Controls second P-MOS channel; fully independent gate input for asynchronous switching. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched -20 V, 0.135 Ω MOSFETs in single TSOP-6 - replaces two discrete SOT-23 devices, saving >40% board area. |
| Ultra-low RDS(on) | 0.135 Ω @ -4.5 V - Reduces conduction loss by >30% vs. comparable P-MOSFETs at 2 A load current. |
| Low gate charge | Qg = 3.6 nC - Enables efficient driving from microcontroller GPIOs without external buffer stages. |
| Lead-free & halogen-free | RoHS-compliant construction with Cu-wire bonding - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1). |
| Body diode performance | VSD = -1.2 V @ -0.96 A, trr = 23 ns - Supports synchronous rectification and reverse-current blocking in battery paths. |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Dual high-side switch controlling charge/discharge paths with independent enable control. Use Value: 0.135 Ω RDS(on) limits voltage drop to <300 mV at 2.2 A, preserving battery runtime and thermal margin. |
Use Scenario: USB Type-C port power path management with hot-swap and fault isolation. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent VBUS and VCONN power control. Use Value: Fast 14 ns rise time and low Qg support clean 5–20 V transitions during PD contract negotiation. |
| Power Bank Load Sharing | Industrial Sensor Node Power Gating |
|
Use Scenario: Seamless transition between battery and adapter input in portable power banks. IC Role / Device Role / Timing Role: Dual P-MOS configured as ideal diode OR-ing and load switch. Use Value: Matched RDS(on) and VGS(th) ensure balanced current sharing and <100 μs switchover latency. |
Use Scenario: Selective power gating of RF transceivers and analog front-ends in wireless sensor nodes. IC Role / Device Role / Timing Role: Low-leakage high-side switch enabling deep-sleep current reduction below 1 μA. Use Value: IDSS < 250 μA at -20 V ensures <10 nA per-channel off-state leakage at 85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | Higher RDS(on) (0.22 Ω @ -4.5 V), larger SO-8 package, higher Qg (6.5 nC) | Less suitable for space-constrained designs; better thermal handling (RθJA = 62 °C/W) | Prefer when board layout allows SO-8 and higher thermal mass is needed for sustained >1.5 A loads. |
| DMC3025LSD-13 | Lower VDS (-12 V), smaller 2×2 mm WDFN, lower RDS(on) (0.095 Ω), but no dual-source tie | Requires separate source routing; unsuitable for shared-source OR-ing topologies | Choose when independent source connections are acceptable and 12 V max system voltage applies. |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF5850TRPBF uniquely combines dual-source integration, ultra-low RDS(on), and TSOP-6 footprint-making it optimal for compact, dual-rail battery management where board area and conduction loss are critical.
Availability
IRF5850TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, power bank load sharing, and industrial sensor node power gating requiring stable component supply and long-term production continuity.
Supply support for IRF5850TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with legacy expertise from International Rectifier's HEXFET technology.
The IRF5850TRPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in portable and battery-powered systems.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The IRF5850TRPBF supports -1.8 A continuous drain current per channel at TA = 70°C with VGS = -4.5 V, based on its 0.62 W power dissipation rating and 130 °C/W thermal resistance. Derating follows linear 7.7 mW/°C beyond 70°C ambient.
Can the two channels be used independently with separate source connections?
No-the TSOP-6 pinout ties Source 1 (Pin 2) and Source 2 (Pin 5) internally; they share a common source node. Independent source routing is not supported. For isolated sources, discrete single-channel P-MOSFETs must be used.
Is the body diode rated for reverse recovery in synchronous rectification?
Yes-the body diode has characterized reverse recovery time (trr = 23–35 ns) and charge (Qrr = 7.7–12 nC) at di/dt = -100 A/μs, making it suitable for moderate-frequency (<500 kHz) synchronous rectification in buck converters and OR-ing circuits.
Does IRF5850TRPBF require gate resistors for EMI control in high-speed switching?
Yes-gate resistors (typically 5–22 Ω) are recommended to dampen ringing caused by parasitic inductance in gate loops. The device's low Qg (3.6 nC) and fast tr/tf make it susceptible to oscillation without controlled gate drive impedance.
IRF5850TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 320pF @ 15V
- Power - Max:
- 960mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
IRF5850TRPBF FAQ
1.How can I place an order for IRF5850TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5850TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5850TRPBF reliable?
The price and inventory of IRF5850TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5850TRPBF is usually 5 days.
3.What payment methods are accepted for IRF5850TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5850TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5850TRPBF?
IRF5850TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5850TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5850TRPBF?
For technical support, including IRF5850TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5850TRPBF requirements.
6.How does Aetrix verify that IRF5850TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF5850TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5850TRPBF meets industry standards.
7.What is the process for return or replacement of IRF5850TRPBF?
All IRF5850TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5850TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5850TRPBF part is unused and in its original packaging.
Return procedure for IRF5850TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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