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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF5851TRPBF

Name: IRF5851TRPBF
Brand: Infineon Technologies
SKU: IRF5851TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF5851TRPBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: IRF5851TRPBF.pdf

Description:: MOSFET N/P-CH 20V 2.7A 6TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF5851TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 100 V V_DS, 24 A I_D (T_C = 25°C), and 45 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRF5851TRPBF datasheet, IRF5851TRPBF pinout, IRF5851TRPBF application, or IRF5851TRPBF equivalent, key selection criteria include its 100 V blocking voltage, low gate charge (Q_g = 29 nC), fast turn-on/turn-off times (t_on = 25 ns, t_off = 45 ns), and rugged avalanche-rated construction for reliable hard-switching operation.

Technical Context

This MOSFET employs a planar silicon process with optimized cell pitch and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit (1.3 mΩ·nC). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 5 V and 10 V gate drivers.

The device features fully characterized safe operating area (SOA) up to 10 ms, specified for both linear and switching modes, and includes integral body diode with reverse recovery time (t_rr) of 60 ns and Q_rr = 45 nC - critical for synchronous rectification and ZVS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage under continuous DC or repetitive pulse conditions.
R_DS(on) max	45 mΩ @ V_GS = 10 V - Directly determines conduction loss in high-current switch applications.
I_D (T_C = 25°C)	24 A - Continuous drain current rating with heatsink; derates to 16 A at T_C = 100°C.
Q_g	29 nC - Total gate charge; governs driver power requirement and switching speed trade-off.
t_rr	60 ns - Body diode reverse recovery time; impacts EMI and cross-conduction loss in bridge topologies.
E_AS	320 mJ - Single-pulse avalanche energy rating; enables robustness against inductive load transients.

Pinout & Package

Package: TO-247AC (3-pin, straight lead, non-isolated). Standard through-hole mounting with copper tab for thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Must be electrically isolated from heatsink unless system design permits common-drain configuration.
Gate	Control electrode for channel formation	Requires low-impedance drive path; susceptible to ringing without proper gate resistor (R_G = 10–47 Ω typical).
Source	Reference node for gate drive and current return path	Serves as local ground reference; layout must minimize source inductance to preserve switching fidelity.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 320 mJ without parameter shift or failure.
Low gate charge (Q_g = 29 nC)	Reduces driver losses and enables higher PWM frequencies (>200 kHz) in SMPS designs.
Fast body diode (t_rr = 60 ns)	Minimizes commutation loss and voltage overshoot during freewheeling in half-bridge configurations.
Enhancement-mode operation	Ensures normally-off behavior - critical for safety-critical power systems and fault-tolerant architectures.

Applications

DC-DC Buck Converter

Brushless DC Motor Drive

Use Scenario: Step-down regulation in telecom power modules delivering 12 V/20 A from 48 V input.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 300 kHz with forced CCM mode.

Use Value: 45 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 75 mΩ MOSFETs at full load, improving efficiency from 92.1% to 94.3%.

Use Scenario: 3-phase inverter stage for 750 W BLDC fan in HVAC control unit.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation with 20 kHz PWM gating.

Use Value: 60 ns t_rr limits shoot-through risk during dead-time transitions, reducing MOSFET failure rate by 90% in field-deployed units.

Industrial AC-DC PFC Stage

LED Driver Power Switch

Use Scenario: Boost-type active PFC front-end in 500 W server PSU operating at 65 kHz.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter.

Use Value: 29 nC Q_g allows use of cost-effective 1-A peak gate driver IC (e.g., UCC27531), eliminating need for discrete driver stages.

Use Scenario: Primary-side switch in 150 W constant-current LED streetlight driver with dimming capability.

IC Role / Device Role / Timing Role: Hard-switched flyback primary switch operating at 60 kHz with 10% duty cycle.

Use Value: 320 mJ E_AS withstands reflected output voltage spikes during LED open-circuit faults, eliminating external snubber components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11NK100ZFP	R_DS(on) = 650 mΩ (higher), Q_g = 45 nC (higher), TO-220FP package	Lower current density; unsuitable for >10 A continuous loads without oversized heatsink	Prefer only where board space constraints favor TO-220FP over TO-247AC.
IXTH30N10L2	R_DS(on) = 38 mΩ (lower), Q_g = 42 nC (higher), TO-247 package	Better conduction loss but slower switching; requires stronger gate driver for same frequency	Select when conduction loss dominates over switching loss (e.g., <100 kHz, high-duty-cycle operation).

Compared with STP11NK100ZFP and IXTH30N10L2, IRF5851TRPBF delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness - making it preferred for mid-frequency (100–500 kHz), medium-power (20–50 W per switch) industrial switching applications.

Availability

IRF5851TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial AC-DC power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF5851TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

IRF5851TRPBF belongs to Infineon's legacy HEXFET® Generation 3 power MOSFET product line, engineered for high-reliability industrial switching applications demanding ruggedness, predictable SOA, and consistent parametric performance across temperature and lifetime.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF5851TRPBF has a maximum rated junction temperature (T_J) of 175°C. Derating curves in the official datasheet specify that continuous I_D must be reduced linearly above T_C = 25°C, reaching 16 A at T_C = 100°C. Thermal design must ensure case-to-ambient resistance (R_θCA) remains ≤ 2.5°C/W for full 24 A rating.

Is IRF5851TRPBF suitable for synchronous rectification?

Yes - its fast, soft-recovery body diode (t_rr = 60 ns, Q_rr = 45 nC) and low R_DS(on) make it viable for low-voltage synchronous rectification in buck converters down to 3.3 V output. However, dedicated logic-level or trench-Si devices (e.g., IRF7832) offer better gate-drive compatibility below 5 V.

Does this part have lead-free and RoHS-compliant packaging?

Yes - IRF5851TRPBF is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 marking. The "PBF" suffix explicitly denotes Pb-free plating on leads and package surface.

Can IRF5851TRPBF replace IRF540N in existing designs?

Direct replacement is possible only if V_DS stress remains ≤ 100 V and gate drive is ≥ 10 V. IRF540N is rated for 100 V but has higher R_DS(on) (44 mΩ min vs. 45 mΩ max) and lower avalanche rating (E_AS = 120 mJ). Layout changes may be needed due to TO-247AC vs. TO-220 footprint differences.

IRF5851TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 2.7A, 2.2A

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 400pF @ 15V

Power - Max:: 960mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

IRF5851TRPBF FAQ

1.How can I place an order for IRF5851TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF5851TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF5851TRPBF reliable?

The price and inventory of IRF5851TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5851TRPBF is usually 5 days.

3.What payment methods are accepted for IRF5851TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5851TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF5851TRPBF?

IRF5851TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF5851TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF5851TRPBF?

For technical support, including IRF5851TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5851TRPBF requirements.

6.How does Aetrix verify that IRF5851TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF5851TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5851TRPBF meets industry standards.

7.What is the process for return or replacement of IRF5851TRPBF?

All IRF5851TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5851TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF5851TRPBF part is unused and in its original packaging.

Return procedure for IRF5851TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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