My Inquiry
My Account
Infineon Technologies IRF5852TRPBF
- Part No.:
- IRF5852TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
IRF5852TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 2.7A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,444
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF5852TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 60 V VDS, 110 A ID (TC = 25°C), and 9.5 mΩ RDS(on) max at VGS = 10 V. It serves as a high-current switching element in DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the IRF5852TRPBF datasheet, IRF5852TRPBF pinout, IRF5852TRPBF application, or IRF5852TRPBF equivalent, key selection criteria include its low on-resistance at standard gate drive, rugged avalanche rating, and TO-247 thermal performance for continuous conduction mode operation.
Technical Context
This MOSFET uses planar silicon process with optimized cell pitch and trench-assisted drift region to achieve low RDS(on) × Qg figure-of-merit. Its gate threshold voltage is 2.0–4.0 V, and it features 100% UIS-tested avalanche capability up to 320 mJ (TC = 25°C).
The device supports hard-switched topologies with fast turn-on (ton ≈ 22 ns) and controlled turn-off (toff ≈ 55 ns) under 10 V gate drive and 15 Ω gate resistance. Body diode reverse recovery charge Qrr is 120 nC typical at IF = 55 A, dI/dt = 100 A/µs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage in continuous operation |
| RDS(on) max | 9.5 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 10 A DC current |
| ID (TC = 25°C) | 110 A - Continuous drain current rating with heatsink; derates to 70 A at TC = 100°C |
| Qg | 71 nC - Total gate charge determining drive power and switching speed trade-off |
| EAS | 320 mJ - Single-pulse avalanche energy rating confirms robustness in inductive switching |
| trr | 55 ns - Body diode reverse recovery time affecting commutation losses in synchronous rectification |
Pinout & Package
TO-247AC package: 3-pin through-hole outline with isolated tab (drain-connected). Standard leadform, RoHS-compliant matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output | Electrically connected to metal tab; requires insulated mounting in most PCB layouts |
| Gate | Control terminal | Receives voltage-controlled signal; 2.0–4.0 V threshold enables compatibility with 3.3 V/5 V logic drivers |
| Source | Reference node / return path | Serves as common reference for gate drive and load current return; critical for layout EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg | 675 Ω·nC - Optimized for high-frequency hard-switching SMPS with reduced gate drive loss |
| 100% UIS tested | 320 mJ avalanche energy - Guarantees reliability in unclamped inductive switching events |
| Fast body diode | Qrr = 120 nC - Reduces reverse recovery loss in buck converter freewheeling phase |
| Enhancement-mode operation | VGS(th) = 2.0–4.0 V - Ensures natural off-state at 0 V gate bias; no external pull-down required |
Applications
| Motor Drive Inverter Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller driving 5–10 kW loads. IC Role / Device Role / Timing Role: High-side and low-side switching element handling PWM at 20–50 kHz with peak currents >80 A. Use Value: 9.5 mΩ RDS(on) limits conduction loss to <0.76 W per device at 9 A RMS, enabling compact heatsink design. | Use Scenario: Primary-side switch in isolated 48 V input, 12 V output full-bridge DC-DC module for telecom power shelves. IC Role / Device Role / Timing Role: Main power switch operating in ZVS-assisted full-bridge topology at 100 kHz. Use Value: Low Qg (71 nC) reduces gate driver power demand and improves ZVS margin across load range. |
| Uninterruptible Power Supply (UPS) | High-Current OR-ing Circuit |
Use Scenario: Output stage H-bridge in online double-conversion UPS delivering 3 kVA sine-wave output. IC Role / Device Role / Timing Role: Bidirectional switching element supporting battery charging and inverter modes with 60 V bus tolerance. Use Value: 100% UIS-rated avalanche capability ensures survival during AC line transients and short-circuit fault recovery. | Use Scenario: Hot-swap OR-ing FET in redundant 48 V server power distribution unit with 100 A total load. IC Role / Device Role / Timing Role: Low-loss forward conduction path replacing Schottky diodes; controlled turn-on via gate driver. Use Value: 9.5 mΩ RDS(on) yields <0.1 W loss per FET at 45 A, cutting heat generation by >70% vs. 40 V Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N6F6 | RDS(on) = 7.5 mΩ @ 10 V; Qg = 82 nC; TO-220FP package | Lower RDS(on) but higher Qg; limited to 90 A ID and smaller thermal mass | Preferable where board space allows TO-220 and lower conduction loss dominates over switching loss |
| IXFH110N60X3 | RDS(on) = 8.2 mΩ @ 10 V; Qg = 65 nC; TO-247 package; 600 V rating | Higher voltage rating increases cost and capacitance; over-spec'd for 60 V systems | Only suitable if future-proofing against bus voltage surge or multi-rail architecture is required |
Compared with STP110N6F6 and IXFH110N60X3, IRF5852TRPBF offers optimal balance of conduction efficiency, switching speed, and thermal robustness in 60 V industrial power stages-especially where TO-247 mechanical stability and avalanche margin are prioritized.
Availability
IRF5852TRPBF is available at Aetrix Electronics and suitable for motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF5852TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF5852TRPBF belongs to Infineon's HEXFET® Generation 3 power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and telecom power conversion systems.
FAQ
What is the maximum junction temperature for IRF5852TRPBF?
The absolute maximum junction temperature is 175°C. Operation above 150°C requires derating of both continuous current and avalanche energy ratings. Thermal resistance RθJC is 0.45°C/W, enabling 110 A operation only with adequate heatsinking and forced airflow.
Is IRF5852TRPBF suitable for synchronous rectification?
Yes-it supports synchronous rectification due to its fast, soft-recovery body diode (Qrr = 120 nC, trr = 55 ns) and low RDS(on). However, dedicated synchronous rectifier MOSFETs like IRF7832 offer lower Qg/RDS(on) ratios optimized for low-side switching.
Does IRF5852TRPBF have integrated gate protection?
No. It lacks built-in gate Zener clamping or ESD protection diodes. External gate resistor (10–47 Ω) and 12 V Zener clamp between gate and source are recommended to prevent overvoltage damage during fast switching or layout-induced ringing.
Can IRF5852TRPBF be paralleled for higher current capacity?
Yes-its positive temperature coefficient of RDS(on) enables stable current sharing. Use matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≤10 Ω) to minimize dynamic imbalance. Derate total current by 15% for 2-device parallel operation.
IRF5852TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400pF @ 15V
- Power - Max:
- 960mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
IRF5852TRPBF FAQ
1.How can I place an order for IRF5852TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF5852TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF5852TRPBF reliable?
The price and inventory of IRF5852TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF5852TRPBF is usually 5 days.
3.What payment methods are accepted for IRF5852TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF5852TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF5852TRPBF?
IRF5852TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF5852TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF5852TRPBF?
For technical support, including IRF5852TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF5852TRPBF requirements.
6.How does Aetrix verify that IRF5852TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF5852TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF5852TRPBF meets industry standards.
7.What is the process for return or replacement of IRF5852TRPBF?
All IRF5852TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF5852TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF5852TRPBF part is unused and in its original packaging.
Return procedure for IRF5852TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF5852TRPBF Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
