Vishay Siliconix IRF610L

Overview

IRF610L from Vishay Siliconix is a 200 V, 3.3 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control stages, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRF610L datasheet, IRF610L pinout, IRF610L application, or IRF610L equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics (t_rr = 150–310 ns), PCB-mount power dissipation (3.0 W), and validated alternatives for high-reliability 200 V power switching designs.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for cost-effective, rugged high-voltage operation. Its D2PAK package enables low R_DS(on) and high pulsed current capability (I_DM = 10 A), while its dynamic dV/dt rating (5.0 V/ns) and unclamped inductive switching capability (E_AS = 64 mJ) support reliable operation in hard-switched topologies.

The IRF610L uses planar vertical DMOS technology with integrated body diode, exhibiting V_GS(th) = 2.0–4.0 V, Q_gd/Q_gs ratio of 2.5, and normalized R_DS(on) drift of <1.5× from 25 °C to 150 °C-enabling stable conduction across wide temperature ranges without active gate drive compensation.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad on underside for thermal and electrical connection; 3-pin configuration (G, D, S) with G and S on gull-wing leads, D on large copper tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF610L, IRF610SPbF trades surface-mount convenience and lower thermal resistance for through-hole reliability, while SiHF610L-GE3 offers identical performance with certified green materials-making IRF610L optimal for cost-sensitive industrial prototypes where Pb-based solder is acceptable.

Availability

IRF610L is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC power supplies, and DC-DC boost converters requiring stable component supply across long production lifecycles.

Supply support for IRF610L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF610L belongs to Vishay's third-generation power MOSFET product line engineered for rugged, cost-optimized high-voltage switching in space-constrained industrial power systems-emphasizing avalanche robustness, surface-mount thermal performance, and ease of paralleling.

FAQ

What is the maximum continuous drain current for IRF610L at 100 °C case temperature?

The IRF610L supports 2.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 3.3 A rating at 25 °C, based on a linear derating factor of 0.29 W/°C and R_thJC = 3.5 °C/W. Designers must ensure heatsinking maintains case temperature ≤ 100 °C under full load to sustain this current without exceeding T_J(max) = 150 °C.

Does IRF610L have a built-in body diode, and what are its key parameters?

Yes, the IRF610L integrates a body diode inherent to its vertical N-channel MOSFET structure. Key parameters include continuous source-drain current I_S = 3.3 A, pulsed current I_SM = 10 A, forward voltage V_SD = 2.0 V at I_S = 3.3 A and T_J = 25 °C, reverse recovery time t_rr = 150–310 ns, and reverse recovery charge Q_rr = 0.60–1.4 μC. These values are measured under standardized conditions and directly impact efficiency in asynchronous converter topologies.

Is IRF610L suitable for logic-level gate drive applications?

No, the IRF610L is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) = 1.5 Ω at V_GS = 10 V-not at 3.3 V or 5 V. For reliable saturation, it requires a minimum 10 V gate drive. Using 5 V logic signals will result in high R_DS(on) and excessive conduction loss; a dedicated gate driver or level shifter is necessary for microcontroller interfacing.

What is the thermal resistance from junction to ambient for IRF610L in typical PCB mount?

When mounted on a 1" square FR-4 PCB, the IRF610L has a maximum junction-to-ambient thermal resistance R_thJA of 40 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions and defines the worst-case temperature rise from junction to ambient air. Actual performance may improve with added copper area or thermal vias, but design margins should be based on this 40 °C/W figure for conservative thermal analysis.

Can IRF610L be used in parallel configurations, and what design considerations apply?

Yes, the IRF610L is explicitly designed for ease of paralleling, as noted in its Features list. Key considerations include matched gate drive impedance (use individual 10–25 Ω resistors per gate), symmetrical PCB layout to minimize loop inductance differences, and thermal coupling to ensure uniform junction temperature. The device's positive R_DS(on) temperature coefficient promotes current sharing, but gate threshold variation (2.0–4.0 V) necessitates careful drive voltage regulation to avoid static imbalance at light loads.