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Vishay Siliconix IRF610LPBF
- Part No.:
- IRF610LPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF610LPBF.pdf
- Description:
- MOSFET N-CH 200V 3.3A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,224
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Product details
Overview
IRF610LPBF from Vishay Siliconix is a 200 V, 3.3 A N-channel enhancement-mode power MOSFET in TO-262 (I2PAK) package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, lamp ballasts, and industrial motor controls.
For engineers reviewing the IRF610LPBF datasheet, IRF610LPBF pinout, IRF610LPBF application, or IRF610LPBF equivalent, key selection criteria include its 200 V VDS, 3.3 A continuous drain current at TC = 25 °C, 36 W maximum power dissipation, 3.5 °C/W junction-to-case thermal resistance, and suitability for hard-switched flyback and resonant topologies requiring ruggedized avalanche capability.
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for fast switching and low conduction loss. Its planar stripe cell structure delivers stable RDS(on) over temperature and supports reliable paralleling in high-current designs.
The IRF610LPBF integrates a robust body diode with 150–310 ns reverse recovery time and 0.60–1.4 μC Qrr, enabling operation in circuits with inductive loads and unclamped inductive switching. It is rated for repetitive avalanche energy of 3.6 mJ and single-pulse avalanche energy up to 64 mJ under defined test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Withstands up to 200 V drain-source blocking voltage, suitable for 170 V AC rectified rails and 48 V telecom systems with margin. |
| RDS(on) @ VGS = 10 V | 1.5 Ω - Low on-resistance minimizes conduction loss in medium-power switching applications up to ~10 W output. |
| ID (continuous, TC = 25 °C) | 3.3 A - Supports sustained load currents typical in offline SMPS auxiliary supplies and LED drivers. |
| Qg | 8.2 nC - Enables efficient gate drive with standard 1 A peak drivers; reduces switching loss in 50–500 kHz range. |
| EAS (single pulse) | 64 mJ - Confirmed avalanche energy rating allows safe operation during transient overloads without external snubbers. |
| RthJC | 3.5 °C/W - Enables direct heatsinking to metal chassis or PCB copper; supports >25 W dissipation with modest thermal interface. |
| tr/tf | 17 ns / 8.9 ns - Fast switching transitions reduce overlap loss in hard-switched topologies. |
Pinout & Package
IRF610LPBF uses the I2PAK (TO-262) surface-mount package with exposed drain tab for thermal and electrical connection. The package has three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the mounting surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires 10 V for full enhancement; ±20 V absolute max rating protects against ESD and drive overshoot. |
| D | Drain | Main high-side power terminal; internally bonded to thermal pad; must be connected to PCB copper pour or heatsink for thermal management. |
| S | Source | Power return path and reference for gate drive; connects to ground or low-side switch node; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Rated for 3.3 A repetitive avalanche current and 3.6 mJ energy-enables robust operation in inductive switching without external protection. |
| Dynamic dV/dt rating | 5.0 V/ns - Resists false turn-on due to high-speed voltage transients in noisy environments like motor drives and SMPS. |
| Fast switching | Turn-on delay 8.2 ns, rise time 17 ns - Reduces switching losses in high-frequency converters operating up to 500 kHz. |
| Low gate charge | 8.2 nC total gate charge - Allows use of low-cost, low-current gate drivers while maintaining clean edge integrity. |
| Surface mount (I2PAK) | TO-262 footprint enables automated assembly and higher power density than through-hole alternatives like TO-220. |
Applications
| AC-DC Adapter Auxiliary Supply | Industrial Lamp Ballast Control |
|---|---|
Use Scenario: Provides isolated bias supply for PWM controller ICs in universal-input 65 W laptop adapters. IC Role / Device Role: High-side switch in self-oscillating or fixed-frequency flyback converter operating at 65–130 kHz. Use Value: 200 V VDS accommodates 375 V DC input peaks; 1.5 Ω RDS(on) keeps standby losses below 80 mW at 10 mA load. |
Use Scenario: Controls filament preheat and main discharge in electronic HID ballasts for street lighting. IC Role / Device Role: Main switching element in half-bridge resonant inverter driving 70–150 W metal halide lamps. Use Value: Repetitive avalanche rating absorbs energy from lamp ignition spikes; 3.3 A ID supports 120 W lamp power with margin. |
| DC Motor Speed Controller | UPS Inverter Half-Bridge Switch |
Use Scenario: Drives brushed 24–48 V DC motors in warehouse automation conveyors and robotic arms. IC Role / Device Role: Low-side switch in H-bridge configuration with PWM frequency up to 20 kHz. Use Value: 3.5 °C/W RthJC allows direct heatsink mounting; body diode trr ≤ 310 ns limits shoot-through risk during commutation. |
Use Scenario: Half-bridge switch in 1 kVA line-interactive UPS inverter stage converting 360 V DC bus to 230 V AC output. IC Role / Device Role: High-voltage switching element in transformerless inverter topology with 50 Hz fundamental and 10 kHz carrier. Use Value: 64 mJ EAS withstands capacitor discharge transients during grid sync loss; 200 V rating covers 360 V bus with 1.8× safety margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF620LPBF | Higher VDS (200 V same), lower RDS(on) (1.2 Ω), higher Qg (12 nC); identical I2PAK package and pinout. | Better conduction efficiency above 2 A, but slower switching due to higher gate charge-preferred for <100 kHz, high-duty-cycle apps. | Select IRF620LPBF when minimizing conduction loss is critical and gate drive strength permits higher Qg. |
| STP2N20FL | Same VDS (200 V), higher RDS(on) (2.2 Ω), lower Qg (5.5 nC); TO-220FP package, not surface mount. | Lower switching loss at light loads due to reduced Qg, but higher thermal resistance (RthJC = 4.2 °C/W) and through-hole assembly requirement. | Choose STP2N20FL only if board layout mandates through-hole mounting and gate drive is current-limited. |
Compared with IRF610LPBF, IRF620LPBF offers lower on-resistance at the cost of increased switching loss, while STP2N20FL trades package compatibility and thermal performance for reduced gate drive demand-making IRF610LPBF the balanced choice for surface-mount, medium-frequency, medium-power switching where both conduction and switching losses matter.
Availability
IRF610LPBF is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial lamp ballasts, and DC motor controllers requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.
Supply support for IRF610LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF610LPBF belongs to Vishay's third-generation power MOSFET product line engineered for ruggedized switching in high-voltage, medium-current applications-emphasizing avalanche robustness, thermal efficiency, and surface-mount manufacturability.
FAQ
What is the maximum continuous drain current for IRF610LPBF at 100 °C case temperature?
The IRF610LPBF supports 2.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify PCB copper area and heatsinking to maintain TC ≤ 100 °C under full load. The IRF610LPBF datasheet confirms this value under standard test conditions with proper thermal management.
Does IRF610LPBF have a built-in body diode, and what are its key parameters?
Yes, the IRF610LPBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 3.3 A continuous source-drain current, 2.0 V forward voltage at 3.3 A and 25 °C, and 150–310 ns reverse recovery time with 0.60–1.4 μC recovered charge. These values are measured per the datasheet's test conditions and define its capability in freewheeling and synchronous rectification roles. The IRF610LPBF body diode is not optimized for ultrafast recovery but is rated for repetitive operation in standard hard-switched topologies.
Is IRF610LPBF RoHS-compliant and halogen-free?
Yes, IRF610LPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The "LPBF" suffix denotes Vishay's lead-free, halogen-free packaging per their material categorization standard. This is confirmed in the Ordering Information table and compliance notes of the official datasheet (Document Number: 91024). The IRF610LPBF is suitable for environmentally regulated industrial and consumer applications requiring full substance compliance documentation.
What is the gate threshold voltage range for IRF610LPBF, and how does it affect drive design?
The IRF610LPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, meaning it begins conducting significantly between those voltages. For full enhancement and guaranteed 3.3 A current, VGS ≥ 10 V is required. This threshold spread necessitates gate drive designs that ensure minimum 10 V swing under worst-case conditions-including PCB trace drop and driver output impedance-to avoid linear-mode operation and thermal runaway. The IRF610LPBF datasheet specifies this range explicitly in the Static Characteristics section.
Can IRF610LPBF be used in parallel configurations, and what design considerations apply?
Yes, the IRF610LPBF is designed for ease of paralleling, as noted in its Features list. Key considerations include matched gate resistors (≤ 1 Ω difference), symmetrical PCB layout to minimize loop inductance, and individual gate drive paths to prevent oscillation. Its positive RDS(on) temperature coefficient ensures current sharing stability across devices. Thermal coupling via shared heatsink is recommended. The IRF610LPBF's low gate charge (8.2 nC) and dynamic dV/dt rating (5.0 V/ns) further support stable parallel operation in high-current inverters and motor drives.
IRF610LPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRF610LPBF FAQ
1.How can I place an order for IRF610LPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF610LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF610LPBF reliable?
The price and inventory of IRF610LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF610LPBF is usually 5 days.
3.What payment methods are accepted for IRF610LPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF610LPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF610LPBF?
IRF610LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF610LPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF610LPBF?
For technical support, including IRF610LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF610LPBF requirements.
6.How does Aetrix verify that IRF610LPBF is sourced from the original manufacturer or authorized distributors?
All IRF610LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF610LPBF meets industry standards.
7.What is the process for return or replacement of IRF610LPBF?
All IRF610LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF610LPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF610LPBF part is unused and in its original packaging.
Return procedure for IRF610LPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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