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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics IRF620

Name: IRF620
Brand: STMicroelectronics
SKU: IRF620
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF620

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF620.pdf

Description:: MOSFET N-CH 200V 6A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,313

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Product details

Overview

IRF620 from STMicroelectronics is an N-channel enhancement-mode PowerMESH™ II MOSFET rated for 200 V drain-source voltage, 6 A continuous drain current at T_C = 25°C, and 0.6 Ω typical R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, 5 V/ns peak diode recovery dv/dt capability, and is housed in a TO-220 package for high-power switching in offline AC-DC converters and motor control stages.

For engineers reviewing the IRF620 datasheet, IRF620 pinout, IRF620 application, or IRF620 equivalent, key selection criteria include its 200 V blocking rating, low gate charge (19 nC), 1.79 °C/W junction-to-case thermal resistance, and verified unclamped inductive switching performance under 6 A avalanche current conditions.

Technical Context

The IRF620 operates as a high-voltage, medium-current power switch with fixed threshold voltage (2–4 V) and gate-driven enhancement-mode operation. Its PowerMESH™ II layout delivers improved R_DS(on) × area figure of merit while maintaining fast switching via low C_iss (350 pF), C_oss (70 pF), and Q_g (19 nC).

It supports hard-switched topologies requiring robust safe operating area (SOA) up to 24 A pulsed drain current and 160 mJ single-pulse avalanche energy. The device's source-drain diode exhibits 1.5 V forward drop at 6 A and 155 ns reverse recovery time under specified inductive test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum DC blocking voltage before avalanche onset; enables use in 170 V_RMS mains-connected circuits with margin.
R_DS(on)	0.6 Ω (typ) at V_GS = 10 V - Determines conduction loss at 6 A: ~21.6 W max dissipation if fully on without heatsink.
I_D (cont)	6 A at T_C = 25°C - Continuous current rating limited by junction temperature; derates to 3.8 A at T_C = 100°C.
Q_g	19 nC - Total gate charge required for full turn-on; sets minimum driver strength and switching loss in PWM applications.
E_AS	160 mJ - Single-pulse avalanche energy rating; validates reliability during inductive turn-off transients without snubber.
dv/dt	5 V/ns - Peak diode recovery voltage slope tolerance; ensures immunity to parasitic turn-on in high-dI/dt environments.
R_thj-case	1.79 °C/W (TO-220) - Thermal resistance from junction to case; defines minimum heatsink requirement for 70 W total dissipation.

Pinout & Package

IRF620 uses a standard TO-220 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; requires <100 nA leakage current handling.
2 (Drain)	High-side power output	Connected to load or bus side; ties to metal tab-must be isolated or referenced accordingly in PCB layout.
3 (Source)	Power return reference	Serves as local ground reference for gate drive; carries full load current and influences gate-source voltage stability.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 160 mJ performance across production lot-no screening waivers.
Extremely high dv/dt capability	5 V/ns rated diode recovery slope prevents false triggering in fast-switching flyback or resonant converters.
Minimized gate charge	19 nC total Q_g reduces driver power demand and switching losses in 50–500 kHz SMPS designs.
PowerMESH™ II cell architecture	Optimizes R_DS(on) × die area trade-off-delivers 0.6 Ω @ 200 V without compromising SOA or speed.

Applications

AC-DC Flyback Converter

DC Motor Drive Stage

Use Scenario: Primary-side switch in universal-input (85–265 V_AC) offline flyback power supplies delivering up to 60 W.

IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller; handles 200 V blocking and 6 A peak primary current.

Use Value: Avalanche rating absorbs leakage inductance spikes without external clamp; 1.79 °C/W R_thj-case enables compact heatsinking.

Use Scenario: Half-bridge high-side switch driving brushed DC motors in industrial actuators or power tools.

IC Role / Device Role / Timing Role: Medium-current, high-voltage switching element; commutates 24–48 V bus with 6 A continuous load current.

Use Value: Low 0.6 Ω R_DS(on) limits I²R loss at full load; 24 A pulsed ID supports stall-current surges.

LED Driver (High-Voltage Buck)

Inductive Load Switching (Solenoid/Relay)

Use Scenario: Constant-current buck switcher for high-brightness LED strings powered from rectified 230 V_AC.

IC Role / Device Role / Timing Role: Main power transistor regulating LED current via high-frequency PWM at >100 kHz.

Use Value: Fast 30 ns rise time and low Q_gd (7.5 nC) minimize switching loss; 5 V/ns dv/dt immunity suppresses noise coupling.

Use Scenario: Solid-state replacement for mechanical relays controlling 24–120 V AC/DC solenoids or contactors.

IC Role / Device Role / Timing Role: Unclamped inductive turn-off switch; absorbs stored energy via intrinsic avalanche capability.

Use Value: 160 mJ E_AS eliminates need for freewheeling diode snubbers in space-constrained control panels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DSS, 20 A I_D, 0.12 Ω R_DS(on), TO-220 - higher current, lower R_DS(on), larger die size	Supports higher continuous loads but requires larger heatsink due to higher capacitance (C_iss = 1200 pF)	Select when >6 A average current or lower conduction loss is critical; verify gate drive capability for 38 nC Q_g.
IRF630	200 V V_DSS, 9 A I_D, 0.4 Ω R_DS(on), TO-220 - higher current rating, lower on-resistance, same footprint	Offers 50% higher I_D and 33% lower R_DS(on) but reduced avalanche energy (120 mJ vs. 160 mJ)	Prefer for upgraded current handling where avalanche stress is mitigated by circuit design or snubbing.

Compared with STP20NM20 and IRF630, the IRF620 provides optimal balance of avalanche ruggedness, gate drive simplicity (19 nC), and thermal efficiency (1.79 °C/W) for cost-sensitive 6 A switching applications where extreme current or ultra-low R_DS(on) is unnecessary.

Availability

IRF620 is available at Aetrix Electronics and suitable for AC-DC power supplies, DC motor drives, and high-voltage LED drivers requiring stable component supply and long-term industrial availability.

Supply support for IRF620 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The PowerMESH™ II MOSFET product line targets high-reliability, high-voltage switching applications where avalanche robustness, thermal efficiency, and fast switching are jointly prioritized over raw current density.

FAQ

Is IRF620 suitable for 230 V_AC rectified input applications?

Yes. With a 200 V V_DSS rating and 160 mJ avalanche energy, IRF620 safely handles peak rectified voltages up to ~325 V when operated within SOA limits and with appropriate snubbing. Its 5 V/ns dv/dt rating further ensures noise immunity in such topologies.

What is the maximum recommended gate drive voltage for IRF620?

The absolute maximum V_GS is ±20 V per datasheet Table 1. For reliable operation, apply 10–15 V to ensure full enhancement while staying ≥2 V below the limit to avoid gate oxide stress during transients or ringing.

Does IRF620 require a gate resistor, and what value is typical?

Yes-a gate resistor is essential to dampen oscillation and control dV/dt. For 100 kHz switching with a 1 A gate driver, 10–22 Ω is typical. Lower values increase switching speed but risk overshoot; higher values reduce EMI at the cost of increased switching loss.

Can IRF620 replace IRF630 in existing designs?

Yes, with caveats: both share TO-220 package and 200 V rating, but IRF620 has higher R_DS(on) (0.6 Ω vs. 0.4 Ω) and lower I_D (6 A vs. 9 A). Verify thermal margin and peak current demands; no changes needed to gate drive or layout.

IRF620 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

IRF620 FAQ

1.How can I place an order for IRF620 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF620 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF620 reliable?

The price and inventory of IRF620 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF620 is usually 5 days.

3.What payment methods are accepted for IRF620?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF620 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF620?

IRF620 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF620 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF620?

For technical support, including IRF620 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF620 requirements.

6.How does Aetrix verify that IRF620 is sourced from the original manufacturer or authorized distributors?

All IRF620 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF620 meets industry standards.

7.What is the process for return or replacement of IRF620?

All IRF620 units undergo pre-shipment inspection (PSI). If there is an issue with IRF620, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF620 part is unused and in its original packaging.

Return procedure for IRF620:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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