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Vishay Siliconix IRF620SPBF
- Part No.:
- IRF620SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF620SPBF.pdf
- Description:
- MOSFET N-CH 200V 5.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:847
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Product details
Overview
IRF620SPBF from Vishay Siliconix is a 200 V, 5.2 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for high-efficiency DC-DC converters, motor control stages, and industrial power switching.
For engineers reviewing the IRF620SPBF datasheet, IRF620SPBF pinout, IRF620SPBF application, or IRF620SPBF equivalent, key selection criteria include its 200 V VDS, 5.2 A continuous drain current at TC = 25 °C, 2.5 °C/W junction-to-case thermal resistance, fast 7.2 ns turn-on delay, and surface-mount D2PAK package suitability for high-current PCB-mounted power stages.
Technical Context
This third-generation Vishay power MOSFET uses planar silicon technology optimized for ruggedness and fast switching in hard-switched topologies. Its dynamic dv/dt rating of 5.0 V/ns and unclamped inductive switching capability support reliable operation in flyback, forward, and half-bridge configurations with minimal snubbing.
The device integrates a low-Qgd/Qg ratio (7.9/14 nC), enabling efficient gate drive with reduced Miller-induced shoot-through risk. Its body diode exhibits 150–300 ns reverse recovery time and 0.91–1.8 μC Qrr, making it suitable for synchronous rectification and freewheeling where controlled diode conduction is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum blocking voltage for primary-side switching in 110–240 VAC offline supplies and 48 V industrial bus systems. |
| RDS(on) @ VGS = 10 V | 0.80 Ω - Enables ≤2.0 W conduction loss at 5.2 A, supporting thermally constrained surface-mount power stages. |
| ID (continuous, TC = 25 °C) | 5.2 A - Sustains full-load current in compact 1"² FR-4 PCB mount without heatsink under typical ambient conditions. |
| Qg (total) | 14 nC - Determines gate driver current requirement (~1.4 A peak for 10 ns rise time), critical for PWM efficiency at 100–500 kHz. |
| EAS (single-pulse) | 110 mJ - Supports energy absorption during unclamped inductive turn-off, reducing need for external clamping in relay drivers and solenoid controls. |
| RthJC | 2.5 °C/W - Enables direct thermal coupling to copper pour or heatsink, delivering up to 50 W dissipation when case-mounted. |
| dv/dt rating | 5.0 V/ns - Ensures immunity to false turn-on in high-noise environments such as motor drives and SMPS with fast edge rates. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S); 14.61–15.88 mm height; 8.38–9.65 mm width; 9.65–10.67 mm length; 1.78–2.79 mm lead thickness.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives 10 V logic-level drive; 3.0 nC Qgs enables fast turn-on with low driver power consumption. |
| Drain (D) | High-side power terminal | Connected to exposed metal tab; carries full load current and requires soldered thermal pad for RthJC = 2.5 °C/W performance. |
| Source (S) | Reference node / return path | Serves as local ground reference for gate drive; internal source inductance (LS = 7.5 nH) affects diode recovery behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 5.0 mJ per pulse - Enables robust operation under transient overloads without derating, eliminating need for external protection in solenoid drivers. |
| Dynamic dv/dt immunity | 5.0 V/ns - Prevents spurious turn-on during high-slew-rate commutation in motor phase-legs and resonant LLC circuits. |
| Low Qgd/Qg ratio | 56% (7.9/14 nC) - Reduces Miller plateau duration, improving controllability in high-frequency ZVS/ZCS topologies. |
| Fast switching | 7.2 ns td(on), 22 ns tr, 19 ns td(off), 13 ns tf - Minimizes transition losses in 200–500 kHz DC-DC converters. |
| Surface-mount packaging | D2PAK (TO-263) - Supports automated assembly and high-power density layouts with 2.0 W PCB-mount capability on 1"² FR-4. |
Applications
| Industrial Motor Control | Offline AC-DC Power Supplies |
|---|---|
|
Use Scenario: Half-bridge gate driver stage in 24–48 V brushless DC motor controllers. IC Role / Device Role / Timing Role: High-side N-channel switch handling 5.2 A continuous phase current with 200 V bus tolerance. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM dead-time, eliminating external TVS diodes. |
Use Scenario: Primary-side switch in 30–60 W universal-input flyback converters. IC Role / Device Role / Timing Role: Main power switch operating at 65–130 kHz with 200 V VDS margin above reflected output voltage. Use Value: 0.80 Ω RDS(on) limits conduction loss to <1.5 W at full load, enabling compact transformer and heatsink design. |
| DC-DC Converter Output Stage | Solenoid & Relay Driver |
|
Use Scenario: Synchronous rectifier or high-side switch in isolated 12 V → 5 V/3.3 V buck-derived converters. IC Role / Device Role / Timing Role: Low-side or high-side power FET with fast 13 ns fall time minimizing cross-conduction loss. Use Value: 14 nC Qg allows efficient gate driving with integrated controller ICs like UCC2897A or LM5116. |
Use Scenario: Inductive load switch for automotive HVAC actuators or industrial pneumatic valves. IC Role / Device Role / Timing Role: Unclamped inductive switch managing 5.2 A coil current with controlled turn-off energy dissipation. Use Value: 110 mJ single-pulse avalanche energy handles worst-case de-energization without external snubber components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V VDS, 20 A ID, 0.12 Ω RDS(on), TO-220 package | Higher current rating but larger through-hole footprint; lacks D2PAK thermal performance on PCB | Preferred for higher-current designs where board space permits through-hole mounting and heatsinking. |
| IXTP50N20P | 200 V VDS, 50 A ID, 0.045 Ω RDS(on), TO-220 package | Lower RDS(on) and higher ID, but significantly higher Qg (72 nC) and no surface-mount option | Selected when ultra-low conduction loss dominates over switching loss and layout flexibility allows TO-220 placement. |
Compared with STP20NM20 and IXTP50N20P, IRF620SPBF offers optimal balance of surface-mount compatibility, moderate RDS(on), and low gate charge for space-constrained 5–10 A power stages requiring D2PAK thermal performance and automated assembly.
Availability
IRF620SPBF is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC power supplies, and DC-DC converter output stages requiring stable component supply, RoHS-compliant lead-free termination, and D2PAK thermal reliability.
Supply support for IRF620SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF620SPBF belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching, fast transitions, and cost-effective high-voltage power conversion in surface-mount form factors.
FAQ
What is the maximum continuous drain current for IRF620SPBF at 100 °C case temperature?
The IRF620SPBF supports 3.3 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation. Designers must verify PCB copper area and airflow to maintain safe junction temperatures below 150 °C. The IRF620SPBF datasheet confirms this value with linear derating factor of 0.40 W/°C above 25 °C case temperature.
Does IRF620SPBF have a built-in body diode, and what are its key parameters?
Yes, the IRF620SPBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 5.2 A continuous source-drain current, 18 A pulsed rating, 1.8 V forward voltage at 5.2 A and 25 °C, and 150–300 ns reverse recovery time with 0.91–1.8 μC Qrr. These values are measured under standardized conditions per the IRF620SPBF datasheet and enable use in freewheeling and synchronous rectification roles.
What is the gate threshold voltage range for IRF620SPBF, and how does it affect drive requirements?
The IRF620SPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This standard-level threshold requires ≥10 V gate drive for full enhancement and low RDS(on), distinguishing it from logic-level MOSFETs. The IRF620SPBF is not compatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification.
Can IRF620SPBF be paralleled with identical units, and what design considerations apply?
Yes, the IRF620SPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. Designers must ensure matched gate drive impedance, symmetrical PCB layout, and shared thermal mass to avoid imbalance. The IRF620SPBF datasheet explicitly lists "Ease of paralleling" as a feature, validated by thermal and electrical characterization across production lots.
What is the thermal resistance from junction to ambient for IRF620SPBF in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRF620SPBF exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 40 °C/W. This value assumes standard JEDEC test conditions and is significantly lower than the 62 °C/W rating for still-air ambient. The IRF620SPBF achieves this via its D2PAK package's exposed drain tab, which must be fully soldered to a thermal pad for optimal performance.
IRF620SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF620SPBF FAQ
1.How can I place an order for IRF620SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF620SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF620SPBF reliable?
The price and inventory of IRF620SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF620SPBF is usually 5 days.
3.What payment methods are accepted for IRF620SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF620SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF620SPBF?
IRF620SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF620SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF620SPBF?
For technical support, including IRF620SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF620SPBF requirements.
6.How does Aetrix verify that IRF620SPBF is sourced from the original manufacturer or authorized distributors?
All IRF620SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF620SPBF meets industry standards.
7.What is the process for return or replacement of IRF620SPBF?
All IRF620SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF620SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF620SPBF part is unused and in its original packaging.
Return procedure for IRF620SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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