My Inquiry
My Account
Infineon Technologies IRF6216TRPBF-1
- Part No.:
- IRF6216TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRF6216TRPBF-1.pdf
- Description:
- MOSFET P-CH 150V 2.2A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:4,078
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF6216TRPBF-1 from Infineon Technologies (formerly International Rectifier) is a -150 V, 0.24 Ω RDS(on) P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -2.2 A continuous drain current at 25°C and optimized for high-voltage DC-DC conversion, load switching, and reverse polarity protection circuits.
For engineers reviewing the IRF6216TRPBF-1 datasheet, IRF6216TRPBF-1 pinout, IRF6216TRPBF-1 application, or IRF6216TRPBF-1 equivalent, key selection criteria include verified -150 V V(BR)DSS, gate threshold voltage range (-3.0 to -5.0 V), total gate charge (33 nC typ.), body diode forward voltage (-1.6 V at -1.3 A), and SO-8 thermal resistance (RθJA = 50 °C/W).
Technical Context
This P-channel MOSFET operates with negative gate-to-source voltage control, enabling high-side switching without level-shifting circuitry. Its -150 V breakdown rating supports industrial 100–120 VAC-derived rails and telecom -48 V systems, while its 33 nC gate charge balances switching speed and drive loss in 100–500 kHz SMPS designs.
The integrated body diode exhibits 80–120 ns reverse recovery time and 310–460 nC Qrr, making it suitable for synchronous rectification and unclamped inductive switching where avalanche energy rating (200 mJ) and -4.0 A IAR are critical for reliability under transient overloads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -150 V - Withstands up to -150 V drain-to-source voltage before avalanche conduction begins, enabling use in high-voltage DC bus protection. |
| RDS(on) @ VGS = -10 V | 0.24 Ω - Confirmed on-resistance at standard gate drive, defining conduction loss in load-switching applications at -1.3 A. |
| Qg (typ.) | 33 nC - Total gate charge determines required driver current and switching transition time in PWM-controlled circuits. |
| ID @ TA = 25°C | -2.2 A - Continuous drain current rating at ambient temperature, used for thermal design with SO-8 package derating. |
| VGS(th) | -3.0 to -5.0 V - Gate threshold voltage range ensures reliable turn-on with standard logic-level negative gate drive. |
| VSD @ IS = -1.3 A | -1.6 V - Forward voltage of integrated body diode, directly impacting conduction loss in freewheeling paths. |
| EAS | 200 mJ - Single-pulse avalanche energy rating, supporting robustness during inductive turn-off transients without external snubbers. |
Pinout & Package
IRF6216TRPBF-1 is housed in an industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–3 and 5–7 for enhanced thermal performance. The package is RoHS-compliant, halogen-free, and qualified to MSL1 per JEDEC J-STD-020D.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 7 | Drain (D) | Common high-current output node; electrically tied internally and thermally connected to exposed copper for heat dissipation. |
| 4 | Gate (G) | Control input requiring negative voltage relative to source to turn on; sensitive to ESD and layout-induced ringing. |
| 6, 8 | Source (S) | Reference node for gate drive and current return path; must be routed with low inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Industry-standard SO-8 footprint | Enables drop-in replacement across multiple vendors without PCB redesign or requalification. |
| MSL1 moisture sensitivity | Eliminates bake-out requirements prior to reflow, reducing manufacturing cycle time and cost. |
| Industrial temperature qualification | Validated for operation from -55°C to +150°C junction temperature, supporting harsh-environment deployment. |
| Low Qgd/Qg ratio (15/33 nC) | Reduces Miller effect-induced switching instability, improving gate drive efficiency in hard-switched topologies. |
Applications
| Industrial DC-DC Converters | Reverse Polarity Protection |
|---|---|
Use Scenario: High-voltage isolated flyback or forward converter secondary-side synchronous rectification in programmable logic controller (PLC) power supplies. IC Role / Device Role / Timing Role: P-channel high-side switch controlling power delivery to 24 V or 48 V logic rails, driven by isolated gate driver. Use Value: Leverages -150 V V(BR)DSS and -1.6 V VSD to reduce conduction losses versus Schottky diodes while maintaining safe margin against reflected voltage spikes. | Use Scenario: Input protection circuit for battery-powered test equipment accepting ±100 V field inputs. IC Role / Device Role / Timing Role: Low-loss series blocking element that conducts only when input polarity matches system ground reference. Use Value: Uses inherent P-channel threshold behavior to enable automatic polarity correction without auxiliary bias or control logic. |
| Telecom -48 V Backup Systems | High-Voltage Load Switching |
Use Scenario: OR-ing diode replacement in redundant -48 V DC distribution panels for cellular base station power shelves. IC Role / Device Role / Timing Role: Bidirectional current-handling switch operating in linear mode during fault conditions and saturated mode during normal operation. Use Value: Achieves <100 mV dropout at full load via 0.24 Ω RDS(on), reducing heat generation and improving system efficiency over discrete diode solutions. | Use Scenario: Solid-state relay replacement in HVAC control modules switching 120 VAC-derived DC loads. IC Role / Device Role / Timing Role: High-voltage, low-duty-cycle load disconnect switch activated by microcontroller GPIO with optocoupler isolation. Use Value: Supports 200 mJ single-pulse avalanche energy to safely absorb inductive kickback from solenoid valves without external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6215PbF | RDS(on) = 0.28 Ω (higher), Qg = 29 nC (lower), same SO-8 package and -150 V rating | Slightly higher conduction loss but faster switching due to lower gate charge | Select when gate drive capability is limited and switching frequency exceeds 300 kHz. |
| STP16PF55 | V(BR)DSS = -55 V (lower), RDS(on) = 0.16 Ω, TO-220 package, no body diode Qrr data published | Not suitable for >-60 V applications; requires heatsink; lacks documented diode recovery specs | Only consider for low-voltage, high-current linear regulation where thermal mass outweighs package constraints. |
Compared with IRF6216TRPBF-1, IRF6215PbF trades 0.04 Ω higher on-resistance for 4 nC lower gate charge-favoring high-frequency efficiency-while STP16PF55's -55 V rating and TO-220 form factor preclude direct substitution in -100 V+ systems or space-constrained SO-8 layouts.
Availability
IRF6216TRPBF-1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, reverse polarity protection circuits, and telecom -48 V backup systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF6216TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.
The IRF6216TRPBF-1 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-voltage, medium-current switching in industrial power supplies, motor controls, and telecom infrastructure where ruggedness and thermal reliability are critical.
FAQ
What is the maximum allowable gate-to-source voltage for IRF6216TRPBF-1?
The absolute maximum VGS is ±20 V. Exceeding this risks permanent gate oxide damage. In practice, gate drive should be limited to -10 V to ensure full enhancement while maintaining margin against transients. The device turns on fully between -3.0 V and -5.0 V (VGS(th) range), so -10 V provides robust saturation with minimal overdrive.
Can IRF6216TRPBF-1 be used in avalanche mode repeatedly?
No-its 200 mJ EAS rating applies only to single-pulse, non-repetitive avalanche events. Repeated avalanche operation causes cumulative junction heating and degradation. Designers must limit inductive energy to within this rating using snubbers or clamp circuits, and verify peak IAS (-4.0 A) and pulse duration (<400 μs) per the datasheet's unclamped inductive test conditions.
Is the SO-8 package of IRF6216TRPBF-1 thermally enhanced?
Yes-the SO-8 outline uses pins 1–3 and 5–7 as electrically and thermally connected drain terminals, forming an internal thermal pad structure. When soldered to a 1-inch² copper area, RθJA drops to 50 °C/W. For higher power, external thermal vias under the drain pads and multilayer board stack-up are recommended to maintain TJ ≤ 150°C at full -2.2 A load.
Does IRF6216TRPBF-1 have a specified body diode reverse recovery charge (Qrr)?
Yes-Qrr is specified as 310–460 nC at TJ = 25°C, IF = -1.3 A, and di/dt = -100 A/μs. This value is critical for estimating switching losses in freewheeling paths and selecting appropriate gate resistors to damp oscillation during diode commutation. The corresponding trr is 80–120 ns.
IRF6216TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 49 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1280 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRF6216TRPBF-1 FAQ
1.How can I place an order for IRF6216TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6216TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6216TRPBF-1 reliable?
The price and inventory of IRF6216TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6216TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF6216TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6216TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6216TRPBF-1?
IRF6216TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6216TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6216TRPBF-1?
For technical support, including IRF6216TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6216TRPBF-1 requirements.
6.How does Aetrix verify that IRF6216TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF6216TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6216TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF6216TRPBF-1?
All IRF6216TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6216TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6216TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF6216TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF6216TRPBF-1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
