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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF624PBF

Name: IRF624PBF
Brand: Vishay Siliconix
SKU: IRF624PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF624PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF624PBF.pdf

Description:: MOSFET N-CH 250V 4.4A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF624PBF from Vishay Siliconix is a 250 V, 4.4 A N-channel power MOSFET in TO-220AB package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating up to 4.4 A - used in DC-DC converters, motor drivers, and power supply switching stages.

For engineers reviewing the IRF624PBF datasheet, IRF624PBF pinout, IRF624PBF application, or IRF624PBF equivalent, key selection criteria include its 250 V V_DS, 1.1 Ω on-resistance at 10 V drive, 14 nC Q_g, TO-220AB thermal performance (R_thJC = 2.5 °C/W), and unclamped inductive switching capability.

Technical Context

This third-generation silicon power MOSFET uses planar V-groove technology optimized for ruggedness and fast switching. Its dynamic dV/dt rating of 4.8 V/ns and 100 mJ single-pulse avalanche energy support reliable operation under transient overvoltage and inductive load conditions.

The device integrates a low-leakage body diode with 200–400 ns reverse recovery time and 0.93–1.9 μC Q_rr, enabling efficient freewheeling in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports input voltages up to 200 V DC in offline or industrial SMPS designs
R_DS(on) @ V_GS = 10 V	1.1 Ω - limits conduction loss to ≤10 W at 3 A continuous drain current
Q_g	14 nC - enables full turn-on with ≤140 μC gate driver charge budget at 10 V
I_D @ T_C = 25 °C	4.4 A - delivers ≥22 W output power in TO-220AB with heatsink
E_AS	100 mJ - withstands unclamped inductive energy spikes without failure in relay/motor drive
dV/dt rating	4.8 V/ns - suppresses false triggering during high-slew-rate transients
T_J range	−55 to +150 °C - qualified for industrial ambient and junction temperature extremes

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 2.5 °C/W junction-to-case thermal resistance, and 62 °C/W junction-to-ambient (no heatsink).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 2.7 nC Q_gs ensures rapid Miller plateau traversal
D (Drain)	High-side power switch node	Connected to TO-220AB metal tab; electrically tied to internal die drain and heat sink interface
S (Source)	Power return reference	Provides low-inductance source path (L_S = 7.5 nH); referenced for gate drive and current sensing

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands 4.4 A I_AR and 5.0 mJ E_AR continuously - eliminates need for external clamping in flyback or buck-boost converters
Dynamic dV/dt rating	4.8 V/ns immunity - prevents spurious turn-on during fast voltage transients across drain-source
Low gate charge (Q_g = 14 nC)	Reduces gate driver power dissipation and enables >100 kHz switching with standard 1-A drivers
Body diode with Q_rr = 0.93–1.9 μC	Minimizes reverse recovery losses in synchronous rectification and half-bridge freewheeling paths
TO-220AB package	Standard footprint with 0.50 °C/W case-to-sink thermal resistance - compatible with off-the-shelf heatsinks and legacy PCB layouts

Applications

Switch-Mode Power Supply	DC Motor Drive
Use Scenario: Primary-side switch in 20–50 W offline flyback converter operating at 65 kHz. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding. Use Value: 250 V V_DS margin accommodates reflected output voltage plus leakage spike; 100 mJ E_AS absorbs unclamped inductive energy during MOSFET turn-off.	Use Scenario: Low-side switch in brushed DC motor H-bridge driving 24 V, 3 A loads. IC Role / Device Role / Timing Role: Ground-referenced current path controller enabling bidirectional motor control. Use Value: 1.1 Ω R_DS(on) limits conduction loss to <10 W at full load; TO-220AB mechanical robustness withstands vibration and thermal cycling.
LED Driver	Industrial Solenoid Control
Use Scenario: Constant-current buck regulator for 12–24 V LED strings drawing up to 4 A. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current switch in step-down topology. Use Value: Fast 13 ns rise time and 12 ns fall time enable precise current regulation; body diode Q_rr minimizes switching loss during freewheeling phase.	Use Scenario: High-side solenoid driver in PLC output module switching 24 V/2 A inductive loads. IC Role / Device Role / Timing Role: Voltage-controlled power switch interfacing microcontroller GPIO to inductive actuator. Use Value: Repetitive avalanche rating protects against back-EMF spikes; 4.8 V/ns dV/dt immunity prevents false triggering during coil de-energization.

Switch-Mode Power Supply

DC Motor Drive

Use Scenario: Primary-side switch in 20–50 W offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding.

Use Value: 250 V V_DS margin accommodates reflected output voltage plus leakage spike; 100 mJ E_AS absorbs unclamped inductive energy during MOSFET turn-off.

Use Scenario: Low-side switch in brushed DC motor H-bridge driving 24 V, 3 A loads.

IC Role / Device Role / Timing Role: Ground-referenced current path controller enabling bidirectional motor control.

Use Value: 1.1 Ω R_DS(on) limits conduction loss to <10 W at full load; TO-220AB mechanical robustness withstands vibration and thermal cycling.

LED Driver

Industrial Solenoid Control

Use Scenario: Constant-current buck regulator for 12–24 V LED strings drawing up to 4 A.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current switch in step-down topology.

Use Value: Fast 13 ns rise time and 12 ns fall time enable precise current regulation; body diode Q_rr minimizes switching loss during freewheeling phase.

Use Scenario: High-side solenoid driver in PLC output module switching 24 V/2 A inductive loads.

IC Role / Device Role / Timing Role: Voltage-controlled power switch interfacing microcontroller GPIO to inductive actuator.

Use Value: Repetitive avalanche rating protects against back-EMF spikes; 4.8 V/ns dV/dt immunity prevents false triggering during coil de-energization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK25Z	250 V V_DS, 2.5 A I_D, 2.5 Ω R_DS(on) - lower current rating and higher on-resistance	Not suitable for ≥4 A continuous loads; limited to low-power solenoid or signal switching	Select when cost sensitivity outweighs current capacity and thermal performance requirements
IRF630PBF	200 V V_DS, 9 A I_D, 0.4 Ω R_DS(on) - higher current, lower voltage rating, lower on-resistance	Better for 100–150 V bus applications requiring higher efficiency at >3 A	Choose when system input voltage is ≤170 V DC and lower conduction loss is critical

Compared with STP2NK25Z and IRF630PBF, the IRF624PBF offers optimal balance of 250 V voltage headroom, 4.4 A current capability, and 1.1 Ω on-resistance - making it uniquely suited for 200 V-class industrial power stages where both breakdown margin and thermal manageability matter.

Availability

IRF624PBF is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, LED drivers, and industrial solenoid control requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF624PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF624PBF belongs to Vishay's third-generation power MOSFET product line, engineered for high-voltage industrial switching applications demanding repetitive avalanche capability, fast dV/dt immunity, and proven TO-220AB thermal behavior.

FAQ

What is the maximum continuous drain current for IRF624PBF at 100 °C case temperature?

The IRF624PBF supports 2.8 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink sizing to maintain T_C ≤ 100 °C under full-load conditions for the IRF624PBF.

Does IRF624PBF have a built-in body diode, and what are its key parameters?

Yes, the IRF624PBF integrates a monolithic body diode with 1.8 V forward voltage at 4.4 A and 25 °C, 200–400 ns reverse recovery time, and 0.93–1.9 μC reverse recovery charge. These values are measured under standardized conditions (T_J = 25 °C, I_F = 4.4 A, dI/dt = 100 A/μs) and directly impact freewheeling efficiency in buck or half-bridge circuits using the IRF624PBF.

Is IRF624PBF RoHS-compliant, and what does the 'PbF' suffix indicate?

The IRF624PBF is RoHS-compliant and lead (Pb)-free, as confirmed by Vishay's material categorization documentation. The 'PbF' suffix explicitly denotes lead-free terminations, and the 'BE3' variant (IRF624PbF-BE3) adds halogen-free packaging. Both versions meet EU RoHS Directive 2011/65/EU and are suitable for environmentally regulated industrial and commercial applications using the IRF624PBF.

What is the gate threshold voltage range for IRF624PBF, and how does it affect drive requirements?

The IRF624PBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, confirming it is a standard-threshold MOSFET requiring ≥10 V gate drive for full enhancement. This means the IRF624PBF is not logic-level compatible and must be driven by a dedicated gate driver or level-shifted microcontroller output to achieve specified R_DS(on) and switching performance.

Can IRF624PBF be paralleled with identical units, and what design considerations apply?

Yes, the IRF624PBF is designed for ease of paralleling, as stated in its features list. Successful parallel operation requires matched gate resistors, symmetrical PCB layout to minimize loop inductance, and individual source resistors for current balancing. Thermal coupling between devices must also be managed to prevent thermal runaway - all critical for multi-phase or high-current implementations using the IRF624PBF.

IRF624PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF624PBF FAQ

1.How can I place an order for IRF624PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF624PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF624PBF reliable?

The price and inventory of IRF624PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF624PBF is usually 5 days.

3.What payment methods are accepted for IRF624PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF624PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF624PBF?

IRF624PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF624PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF624PBF?

For technical support, including IRF624PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF624PBF requirements.

6.How does Aetrix verify that IRF624PBF is sourced from the original manufacturer or authorized distributors?

All IRF624PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF624PBF meets industry standards.

7.What is the process for return or replacement of IRF624PBF?

All IRF624PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF624PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF624PBF part is unused and in its original packaging.

Return procedure for IRF624PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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