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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics IRF630FP

Name: IRF630FP
Brand: STMicroelectronics
SKU: IRF630FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRF630FP.pdf

Description:: MOSFET N-CH 200V 9A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:4,020

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Product details

Overview

IRF630FP from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 200 V V_DS, 0.40 Ω max R_DS(on) at 10 V V_GS, and 9 A continuous drain current at T_C = 25 °C. It serves as a primary high-voltage switching element in isolated DC-DC converters, leveraging STripFET™ process for minimized gate charge (11.6 nC) and intrinsic capacitance.

For engineers reviewing the IRF630FP datasheet, IRF630FP pinout, IRF630FP application, or IRF630FP equivalent, key selection criteria include avalanche ruggedness (110 mJ), dv/dt capability (5.8 V/ns), thermal resistance (1.26 °C/W junction-to-case), and source-drain diode recovery performance (118.5 ns t_rr, 393 nC Q_rr).

Technical Context

This MOSFET employs ST's STripFET™ process to achieve low input capacitance (C_iss = 370 pF) and reduced gate charge-critical for high-frequency, high-efficiency hard-switched topologies. Its safe operating area supports pulsed drain currents up to 36 A with robust unclamped inductive switching capability.

The device integrates a fast-recovery body diode (t_rr = 118.5 ns, Q_rr = 393 nC) and exhibits stable threshold voltage (V_GS(th) = 2–4 V) and on-resistance over temperature (R_DS(on) normalized to 1.0 at 25 °C, ~2.2× at 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in 100–200 V bus applications like telecom PSUs and industrial SMPS
R_DS(on) max	0.40 Ω at V_GS = 10 V, I_D = 4.5 A - determines conduction loss and thermal rise under full-load conditions
I_D cont.	9 A at T_C = 25 °C - defines maximum continuous current before derating due to thermal limits
Q_g	11.6 nC - directly impacts gate drive power and switching speed in high-frequency designs
E_AS	110 mJ - enables reliable operation under unclamped inductive load transients without failure
dv/dt ruggedness	5.8 V/ns - ensures immunity to parasitic turn-on during high-slew-rate switching events
t_rr	118.5 ns - reduces switching losses and EMI in synchronous rectification and flyback configurations

Pinout & Package

IRF630FP uses a TO-220 type A package with insulated tab (D = Drain connected to metal tab). Pin assignment is standardized: Pin 1 = Gate (G), Pin 2 = Drain (D, electrically connected to tab), Pin 3 = Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Control terminal	Receives gate drive signal; requires ≥10 V for full enhancement; sensitive to ESD and ringing
D (Pin 2 / Tab)	High-side power path	Drain connects directly to metal tab-must be electrically isolated from heatsink unless referenced to same potential
S (Pin 3)	Reference node	Source ties to power ground or low-side return; forms common reference for gate drive and current sensing

Key Features

Feature	Design Value
STripFET™ process integration	Reduces C_iss to 370 pF and Q_g to 11.6 nC-enabling >300 kHz switching in phase-shifted full-bridge converters
High dv/dt immunity	5.8 V/ns rating prevents spurious turn-on in high-noise environments such as motor drives and PFC stages
Robust avalanche capability	110 mJ single-pulse energy absorption allows operation without external snubbers in inductive switching circuits
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~2.2× from 25 °C to 150 °C-supports stable current sharing in paralleled configurations

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: Primary-side switch in 48 V input, 300–500 W isolated forward or half-bridge converters powering base station subsystems.

IC Role / Device Role / Timing Role: High-voltage power switch handling 200 V bus with 100–250 kHz PWM; body diode conducts during dead-time in synchronous rectified outputs.

Use Value: Low Q_g and C_iss reduce gate drive loss and improve efficiency above 92% at full load; avalanche rating eliminates need for clamping circuits.

Use Scenario: Main switching transistor in 3-phase rectified 380 V input industrial power supplies for PLCs and HMIs.

IC Role / Device Role / Timing Role: Hard-switched primary switch operating at 60–120 kHz; withstands line surges and load dump transients via 200 V V_DS and 110 mJ E_AS.

Use Value: 1.26 °C/W R_th(j-c) enables direct mounting to aluminum heatsinks without thermal interface pads in convection-cooled enclosures.

UPS Inverter Stages

LED Driver Power Stages

Use Scenario: Output H-bridge switch in online double-conversion UPS inverters delivering 230 VAC from 360–400 VDC bus.

IC Role / Device Role / Timing Role: Bidirectional switching element conducting both AC half-cycles; body diode provides freewheeling path during polarity reversal.

Use Value: Fast t_rr (118.5 ns) and low Q_rr (393 nC) minimize cross-conduction loss and thermal stress during zero-voltage switching transitions.

Use Scenario: High-side switch in constant-current LED drivers for street lighting using buck-boost topology with 150–200 V input.

IC Role / Device Role / Timing Role: Regulated current source switch controlling LED string current; operates in linear region during dimming and fully saturated during full output.

Use Value: Stable V_GS(th) (2–4 V) and low R_DS(on) tolerance ensure precise current regulation across ambient temperatures from −40 °C to +85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DS, 0.22 Ω R_DS(on), 20 A I_D, TO-220 - lower on-resistance but higher Q_g (29 nC)	Better conduction loss at high current; less suitable for >200 kHz due to gate charge	Select when thermal budget is tight and switching frequency ≤100 kHz
IRF640NPBF	200 V V_DS, 0.18 Ω R_DS(on), 18 A I_D, TO-220 - improved R_DS(on) and current rating, same Q_g (12 nC)	Higher current capacity and lower conduction loss; identical dv/dt and avalanche specs	Preferred for new designs requiring margin in I_D or R_DS(on) without changing layout or drive

Compared with IRF630FP, STP20NM20 offers lower conduction loss but demands stronger gate drive; IRF640NPBF delivers superior current handling and efficiency while maintaining identical switching behavior and footprint compatibility.

Availability

IRF630FP is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF630FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The IRF630FP belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in isolated power conversion systems where low gate charge and avalanche robustness are critical.

FAQ

What is the maximum safe operating temperature for IRF630FP?

The IRF630FP has a maximum operating junction temperature of 175 °C and a storage temperature range of −65 to +175 °C. At T_C = 100 °C, its continuous drain current is derated to 6.5 A. Thermal design must maintain T_J ≤ 175 °C under worst-case conduction and switching loss conditions, using the specified R_th(j-c) = 1.26 °C/W and appropriate heatsinking.

Does IRF630FP have a built-in body diode, and what are its characteristics?

Yes, IRF630FP integrates a monolithic N-channel body diode between source and drain. Its forward voltage is 1.5 V at I_SD = 9 A and V_GS = 0 V, with reverse recovery time t_rr = 118.5 ns and Q_rr = 393 nC under specified test conditions (I_SD = 9 A, di/dt = 100 A/µs, V_DD = 50 V). This diode supports freewheeling in flyback and resonant topologies.

Can IRF630FP be used in parallel configurations?

Yes, IRF630FP supports paralleling due to its positive temperature coefficient of R_DS(on)-on-resistance increases with junction temperature, promoting natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to suppress oscillation. Derating total current by 15–20% is recommended for thermal margin.

Is IRF630FP RoHS-compliant and halogen-free?

Yes, IRF630FP is manufactured in STMicroelectronics' ECOPACK®-compliant TO-220 package, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. The device carries the "E3" marking indicating lead-free termination and green packaging, with full compliance documentation available through ST's quality portal.

IRF630FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

IRF630FP FAQ

1.How can I place an order for IRF630FP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630FP reliable?

The price and inventory of IRF630FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630FP is usually 5 days.

3.What payment methods are accepted for IRF630FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630FP?

IRF630FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630FP?

For technical support, including IRF630FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630FP requirements.

6.How does Aetrix verify that IRF630FP is sourced from the original manufacturer or authorized distributors?

All IRF630FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630FP meets industry standards.

7.What is the process for return or replacement of IRF630FP?

All IRF630FP units undergo pre-shipment inspection (PSI). If there is an issue with IRF630FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630FP part is unused and in its original packaging.

Return procedure for IRF630FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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