My Inquiry
My Account
Vishay Siliconix IRF630SPBF
- Part No.:
- IRF630SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF630SPBF.pdf
- Description:
- MOSFET N-CH 200V 9A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:944
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF630SPBF from Vishay Siliconix is a 200 V, 9.0 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 0.40 Ω RDS(on) at VGS = 10 V, 43 nC total gate charge, and repetitive avalanche rating-designed for high-current DC-DC converters, motor drive half-bridges, and industrial SMPS primary-side switching.
For engineers reviewing the IRF630SPBF datasheet, IRF630SPBF pinout, IRF630SPBF application, or IRF630SPBF equivalent, key selection criteria include its 200 V VDS, 74 W TC=25 °C power dissipation, 5.0 V/ns peak diode recovery dv/dt capability, and D2PAK thermal performance with RthJC = 1.7 °C/W-critical for thermally constrained PCB-mounted power stages.
Technical Context
This third-generation Vishay power MOSFET uses planar silicon technology optimized for ruggedness and fast switching, with integrated body diode rated for 9.0 A continuous source-drain current and 170–340 ns reverse recovery time. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on under standard 10 V gate drive while maintaining noise immunity.
The device operates across –55 to +150 °C junction temperature range and supports unclamped inductive switching with 250 mJ single-pulse avalanche energy. Dynamic parameters-including 800 pF input capacitance, 240 pF output capacitance, and 76 pF reverse transfer capacitance-are specified at VDS = 25 V and f = 1 MHz, enabling accurate snubber and gate driver design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Withstands up to 200 V drain-source blocking voltage, suitable for 110/220 VAC rectified bus applications. |
| RDS(on) | 0.40 Ω @ VGS = 10 V - Enables low conduction loss in high-current switching paths (e.g., ≤ 3.2 W at 9 A). |
| Qg | 43 nC - Determines gate driver current requirement; ~4.3 mA average drive current needed for 100 kHz switching at 10 V swing. |
| ID (continuous) | 9.0 A @ TC = 25 °C - Specifies maximum steady-state current with heatsink; derates linearly to 5.7 A at 100 °C case temperature. |
| EAS | 250 mJ - Quantifies unclamped inductive energy handling capability, supporting robust operation in flyback or motor freewheeling. |
| dv/dt (diode) | 5.0 V/ns - Minimum guaranteed rate of voltage rise the body diode can sustain without spurious turn-on during recovery. |
| RthJC | 1.7 °C/W - Junction-to-case thermal resistance enables direct thermal interface to heatsink; critical for thermal management in D2PAK layout. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); 14.61–15.88 mm height; JEDEC-compliant outline per document 73397.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires < ±20 V absolute max rating and low-impedance drive due to 43 nC Qg. |
| Drain (D) | High-side power terminal | Connected to exposed copper pad on bottom of package; serves as primary heat path and high-voltage node-must be routed with clearance for 200 V working voltage. |
| Source (S) | Reference and return path | Common node for gate drive reference and load current return; internal source inductance (LS = 7.5 nH) impacts switching waveform ringing and diode recovery behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 9.0 A IAR and 7.4 mJ EAR under repetitive conditions-enables reliable operation in inductive load switching without external clamping. |
| Dynamic dv/dt rating | 5.0 V/ns minimum body diode dv/dt immunity-prevents false turn-on during high-speed voltage transients in bridge configurations. |
| Low RDS(on) × Qg figure-of-merit | 17.2 Ω·nC - Balances conduction and switching losses for medium-frequency (≤ 200 kHz) hard-switched topologies. |
| Fast switching | 9.4 ns td(on), 28 ns tr, 39 ns td(off), 20 ns tf - Enables high-efficiency operation with minimal overlap loss in synchronous rectifiers and PWM controllers. |
| Surface-mount D2PAK | Enables automated assembly and higher power density than TO-220; thermal pad allows direct PCB copper pour for RthJA ≤ 40 °C/W with 1"² FR-4 mounting. |
Applications
| Industrial SMPS Primary Switch | DC Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 200–500 W offline flyback or forward converter operating from 85–265 VAC input. IC Role / Device Role / Timing Role: Primary-side power switch controlled by PWM controller (e.g., UC384x), handling full input-referred current and voltage stress. Use Value: 200 V VDS margin accommodates reflected output voltage plus leakage spikes; 0.40 Ω RDS(on) minimizes conduction loss at 9 A peak primary current. |
Use Scenario: 24–48 V brushed DC motor control in factory automation, requiring bidirectional current flow and regenerative braking. IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge leg, driven by isolated gate driver (e.g., Si823x) with dead-time control. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 9.0 A continuous ID supports 5–7 A RMS motor current with thermal headroom. |
| LED Driver Power Stage | UPS Inverter Output Stage |
Use Scenario: Constant-current LED driver for high-bay lighting, using buck or SEPIC topology with 30–100 V output. IC Role / Device Role / Timing Role: Main switching element regulating LED string current; operates at 50–150 kHz with zero-voltage switching assist. Use Value: Low Qgd/Qgs ratio (23/7.0 ≈ 3.3) improves controllability during Miller plateau; 2.0 V body diode forward drop reduces conduction loss in synchronous rectification mode. |
Use Scenario: Line-interactive UPS output inverter stage converting 36–48 VDC battery to 120/230 VAC via full-bridge topology. IC Role / Device Role / Timing Role: One quadrant switch in full-bridge, commutated at 50/60 Hz or high-frequency PWM with sinusoidal modulation. Use Value: 150 °C max TJ and –55 °C min Tstg ensure reliability across wide ambient ranges; 250 mJ EAS handles fault currents during short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60FD | 600 V VDS, 0.32 Ω RDS(on), TO-220 package, no avalanche rating | Higher voltage rating suits 400 VDC bus designs but lacks repetitive avalanche robustness for inductive loads | Prefer when higher blocking voltage is required and thermal design permits through-hole mounting |
| IXTP50N20P | 200 V VDS, 0.042 Ω RDS(on), TO-220, 50 A ID, no D2PAK footprint | Lower on-resistance and higher current support ideal for high-power density but incompatible with surface-mount layout | Choose when board space allows TO-220 and lower conduction loss outweighs SMT assembly benefits |
Compared with STP20NM60FD and IXTP50N20P, the IRF630SPBF uniquely balances 200 V rating, D2PAK surface-mount compatibility, and verified repetitive avalanche capability-making it optimal for compact, thermally constrained, inductive-load switching where layout efficiency and ruggedness are jointly prioritized.
Availability
IRF630SPBF is available at Aetrix Electronics and suitable for industrial SMPS, DC motor drives, LED drivers, and UPS inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.
Supply support for IRF630SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF630SPBF belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching performance, low on-resistance, and cost-effective manufacturing-targeting high-volume power conversion systems demanding proven avalanche tolerance and surface-mount scalability.
FAQ
What is the maximum continuous drain current for IRF630SPBF at 100 °C case temperature?
The IRF630SPBF supports 5.7 A continuous drain current at TC = 100 °C, per its linear derating factor of 0.59 W/°C from the 74 W maximum power dissipation at 25 °C. This value reflects thermal limits under sustained conduction, not transient pulse capability. Designers must verify PCB copper area and heatsinking to maintain case temperature within specification during operation of the IRF630SPBF.
Does IRF630SPBF have a specified avalanche energy rating?
Yes, the IRF630SPBF is rated for 250 mJ single-pulse avalanche energy (EAS) and 7.4 mJ repetitive avalanche energy (EAR). These values are measured under defined test conditions: VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 Ω, and IAS = 9.0 A. The device's repetitive avalanche current rating is 9.0 A, confirming suitability for inductive load switching without external snubbers in properly designed circuits using the IRF630SPBF.
What is the gate threshold voltage range for IRF630SPBF?
The IRF630SPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V, tested at VDS = VGS and ID = 250 μA. This range ensures consistent turn-on behavior with standard 10 V gate drive while providing margin against noise-induced conduction. It is not a logic-level MOSFET-the IRF630SPBF requires ≥ 10 V VGS to achieve its specified 0.40 Ω RDS(on), and operation below 4.5 V results in significantly higher on-resistance.
Can IRF630SPBF be used in parallel configurations?
Yes, the IRF630SPBF is explicitly designed for ease of paralleling, as noted in its datasheet features. Its positive temperature coefficient of RDS(on) promotes current sharing between devices, and low gate charge (43 nC) simplifies matched gate drive design. Successful paralleling requires symmetrical PCB layout, individual gate resistors (e.g., 10–22 Ω), and thermal coupling to ensure balanced junction temperatures across all IRF630SPBF units in the array.
What is the body diode forward voltage of IRF630SPBF at 9.0 A?
The IRF630SPBF body diode forward voltage (VSD) is specified as 2.0 V maximum at TJ = 25 °C, IS = 9.0 A, and VGS = 0 V. This parameter directly impacts conduction loss during freewheeling intervals in buck, flyback, or bridge topologies. At elevated temperatures (e.g., 125 °C), VSD decreases slightly due to negative temperature coefficient of the intrinsic diode-verified in typical characteristics curves of the IRF630SPBF datasheet.
IRF630SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF630SPBF FAQ
1.How can I place an order for IRF630SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF630SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF630SPBF reliable?
The price and inventory of IRF630SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630SPBF is usually 5 days.
3.What payment methods are accepted for IRF630SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF630SPBF?
IRF630SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF630SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF630SPBF?
For technical support, including IRF630SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630SPBF requirements.
6.How does Aetrix verify that IRF630SPBF is sourced from the original manufacturer or authorized distributors?
All IRF630SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630SPBF meets industry standards.
7.What is the process for return or replacement of IRF630SPBF?
All IRF630SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF630SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF630SPBF part is unused and in its original packaging.
Return procedure for IRF630SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF630SPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
