STMicroelectronics IRF640FP

Overview

IRF640FP from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220FP package, rated for 200 V drain-source voltage, <0.18 Ω R_DS(on) at V_GS = 10 V and 9 A, and 18 A continuous drain current at T_C = 25°C. It employs MESH OVERLAY™ strip layout technology to achieve high dv/dt immunity, low intrinsic capacitances, and minimized gate charge-enabling robust switching in hard-switched SMPS and motor drive half-bridges.

For engineers reviewing the IRF640FP datasheet, IRF640FP pinout, IRF640FP application, or IRF640FP equivalent, key selection criteria include its 125 W (TO-220) vs. 40 W (TO-220FP) thermal limits, 3.12 °C/W junction-to-case resistance, avalanche-rated 280 mJ single-pulse energy, and 240 ns reverse recovery time under 150°C junction conditions.

Technical Context

This device operates as a unidirectional, voltage-controlled power switch with gate-driven turn-on/turn-off. Its 200 V V_DS rating supports off-line AC-DC converters up to 170 V RMS input, while the 0.15 Ω typical R_DS(on) ensures low conduction loss at 9 A DC load current. The 55 nC total gate charge enables efficient drive with standard gate drivers like the STMicroelectronics TD350.

The integrated body diode exhibits 1.5 V forward voltage at 18 A and 240 ns reverse recovery time under harsh di/dt (100 A/µs), making it suitable for freewheeling in inductive loads. Its 5 V/ns peak diode recovery dv/dt capability prevents spurious turn-on during commutation in bridge configurations.

Key Specifications

Pinout & Package

IRF640FP uses the TO-220FP (Full-Pak) package: insulated plastic housing with electrically isolated tab, enabling direct mounting to heatsinks without insulating washers. The case is internally connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM60FD and IRFZ44NPBF, IRF640FP occupies a unique niche: optimized for 200 V-class switching where moderate R_DS(on) and proven avalanche ruggedness outweigh raw current or voltage extremes-ideal for cost-sensitive industrial power supplies.

Availability

IRF640FP is available at Aetrix Electronics and suitable for AC-DC power supplies, DC motor drives, inductive load switching, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF640FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The IRF640FP belongs to ST's legacy power MOSFET portfolio developed for high-reliability industrial switching applications, emphasizing avalanche ruggedness, thermal stability, and manufacturability in TO-220FP insulated packages.

FAQ

Is IRF640FP pin-compatible with IRF640?

Yes-both share identical pinout (Drain-Tab, Gate-Pin2, Source-Pin3) and TO-220 mechanical outline, but IRF640FP features an insulated plastic tab (electrically isolated drain), whereas IRF640 has a conductive metal tab requiring insulating hardware. This difference affects heatsink mounting and grounding strategy.

What is the maximum safe operating frequency for IRF640FP in hard-switched applications?

At 18 A and 100 V V_DS, practical hard-switching is limited to ≤100 kHz due to 55 nC gate charge and 27 ns rise/fall times. Above this, switching losses dominate; for >200 kHz operation, consider devices with lower Q_g and C_oss, such as ST's MDmesh series.

Can IRF640FP replace IRF640 in existing PCB layouts?

Yes, mechanically-same footprint and pin assignment-but electrical isolation of the TO-220FP tab eliminates need for mica washers or silicone pads. However, verify that PCB copper pour under the tab is not grounded, as the isolated drain must remain at high-voltage potential.

Does IRF640FP support gate voltages below 10 V?

It conducts at V_GS ≥ 2 V (threshold), but R_DS(on) rises sharply below 10 V: at 5 V, R_DS(on) exceeds 0.5 Ω, increasing conduction loss 3×. For reliable low-loss operation, maintain V_GS ≥ 10 V with ±20 V absolute maximum rating.