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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF640S

Name: IRF640S
Brand: Vishay Siliconix
SKU: IRF640S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF640S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF640S.pdf

Description:: MOSFET N-CH 200V 18A D2PAK

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Product details

Overview

IRF640S from Vishay Siliconix is a 200 V, 18 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.18 Ω R_DS(on) at V_GS = 10 V, 70 nC total gate charge, and full avalanche rating-designed for high-current DC-DC converters, motor drives, and industrial switching power supplies.

For engineers reviewing the IRF640S datasheet, IRF640S pinout, IRF640S application, or IRF640S equivalent, this page delivers verified electrical specs, thermal performance data, real-world switching timing (t_d(on) = 14 ns, t_f = 36 ns), body diode recovery characteristics (t_rr = 300–610 ns), and direct package-mounting guidance for PCB layout and thermal management.

Technical Context

This device implements a third-generation silicon vertical DMOS structure optimized for ruggedness and fast switching. Its 1.0 °C/W junction-to-case thermal resistance enables 130 W continuous power dissipation at T_C = 25 °C, while dynamic dV/dt rating of 5.0 V/ns supports reliable operation in noisy high-voltage environments.

The IRF640S integrates a low-Q_gd/Q_g ratio (39/70 nC) to minimize Miller-induced turn-off delay, and its 150 °C maximum junction temperature with fully rated repetitive avalanche energy (E_AR = 13 mJ) ensures robustness under transient overloads in unclamped inductive switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input rails up to 170 V DC in offline SMPS or motor drive half-bridges
R_DS(on)	0.18 Ω @ V_GS = 10 V - limits conduction loss to ≤3.6 W at 11 A continuous drain current
Q_g	70 nC - determines gate driver power requirement (~1.4 mW per 100 kHz switch at 10 V drive)
I_D (T_C = 100 °C)	11 A - defines usable current derating for thermally constrained heatsink designs
E_AS	580 mJ - enables safe single-pulse energy absorption during inductive load turn-off
t_r/t_f	51 ns / 36 ns - sets minimum practical switching period for ≥2 MHz hard-switched topologies
R_thJC	1.0 °C/W - allows direct thermal interface to copper-clad heatsinks without thermal compound penalty

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low-inductance, high-current routing and thermal conduction to PCB copper area. Dimensions: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H); recommended minimum pad: 10.668 mm × 9.017 mm.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; ±20 V absolute max rating prevents gate oxide damage
D (Drain)	High-side power terminal	Connected to exposed metal tab; carries full load current and dissipates heat directly to PCB
S (Source)	Reference node	Common return path for gate drive and load current; establishes local ground reference for driver IC

Key Features

Feature	Design Value
Full avalanche rating	580 mJ single-pulse and 13 mJ repetitive energy handling without degradation
Dynamic dV/dt immunity	5.0 V/ns rated rate-of-rise ensures noise immunity in high-di/dt switching nodes
Low-profile surface mount	D2PAK footprint enables >2× power density vs. TO-220 in automated SMT assembly
150 °C operating temperature	Enables operation in sealed enclosures or high-ambient industrial environments without derating
Fast body diode recovery	t_rr = 300–610 ns reduces reverse recovery losses in synchronous rectification and freewheeling paths

Applications

Industrial Motor Drives	Switch-Mode Power Supplies
Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side N-channel switch with integrated body diode conducting freewheeling current during low-side conduction. Use Value: 0.18 Ω R_DS(on) minimizes I²R losses at 10–15 A RMS; 580 mJ E_AS absorbs inductive kickback during PWM dead-time transitions.	Use Scenario: Primary-side switching transistor in 200–300 W offline flyback or forward converter. IC Role / Device Role / Timing Role: Main power switch turning on/off 100 kHz–500 kHz AC line-derived DC bus voltage. Use Value: 200 V V_DS safely withstands reflected output voltage plus leakage spikes; 70 nC Q_g enables efficient gate drive with <1 W driver loss.
Uninterruptible Power Systems	DC-DC Converter Modules
Use Scenario: Battery backup inverter output stage delivering clean 230 VAC sine wave during grid failure. IC Role / Device Role / Timing Role: Low-loss switching element in full-bridge topology handling bidirectional energy flow. Use Value: 150 °C T_J(max) and 1.0 °C/W R_thJC support sustained 100% load in compact, fanless UPS enclosures.	Use Scenario: Step-down power stage in 48 V–12 V telecom or server intermediate bus converter. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in multiphase buck configuration. Use Value: Fast t_r/t_f (51/36 ns) and low C_oss (430 pF) reduce switching losses at 1 MHz+ frequencies.

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: High-side N-channel switch with integrated body diode conducting freewheeling current during low-side conduction.

Use Value: 0.18 Ω R_DS(on) minimizes I²R losses at 10–15 A RMS; 580 mJ E_AS absorbs inductive kickback during PWM dead-time transitions.

Use Scenario: Primary-side switching transistor in 200–300 W offline flyback or forward converter.

IC Role / Device Role / Timing Role: Main power switch turning on/off 100 kHz–500 kHz AC line-derived DC bus voltage.

Use Value: 200 V V_DS safely withstands reflected output voltage plus leakage spikes; 70 nC Q_g enables efficient gate drive with <1 W driver loss.

Uninterruptible Power Systems

DC-DC Converter Modules

Use Scenario: Battery backup inverter output stage delivering clean 230 VAC sine wave during grid failure.

IC Role / Device Role / Timing Role: Low-loss switching element in full-bridge topology handling bidirectional energy flow.

Use Value: 150 °C T_J(max) and 1.0 °C/W R_thJC support sustained 100% load in compact, fanless UPS enclosures.

Use Scenario: Step-down power stage in 48 V–12 V telecom or server intermediate bus converter.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in multiphase buck configuration.

Use Value: Fast t_r/t_f (51/36 ns) and low C_oss (430 pF) reduce switching losses at 1 MHz+ frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600 V V_DS, 0.32 Ω R_DS(on), TO-220 package, lower Q_g (45 nC)	Better voltage margin but higher conduction loss; through-hole mounting only	Select when 600 V isolation is required and board space allows TO-220 footprint
IXTP18N20P	200 V V_DS, 0.22 Ω R_DS(on), TO-220 package, 100% avalanche tested	Similar voltage/current rating but 22% higher R_DS(on); no D2PAK surface-mount option	Choose when legacy through-hole assembly is mandated and minor efficiency trade-off is acceptable

Compared with STP20NM60FD and IXTP18N20P, the IRF640S delivers superior power density via D2PAK surface-mount packaging, lowest R_DS(on) in its 200 V class, and proven 580 mJ avalanche capability-making it optimal for space-constrained, high-efficiency industrial switching where thermal performance and reliability are critical.

Availability

IRF640S is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, uninterruptible power systems, and DC-DC converter modules requiring stable component supply across long production lifecycles.

Supply support for IRF640S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRF640S belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching in high-current, high-temperature environments-targeting applications where fast switching, low on-resistance, and guaranteed avalanche performance are essential.

FAQ

What is the maximum continuous drain current for IRF640S at 100 °C case temperature?

The IRF640S supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under real-world heatsinking conditions and must be used-not the 18 A rating at 25 °C-for thermal design validation in sustained-load applications.

Does IRF640S require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

The IRF640S has a gate threshold voltage (V_GS(th)) of 2.0–4.0 V and requires 10 V for full enhancement, so direct microcontroller GPIO drive (typically 3.3 V or 5 V) results in incomplete turn-on and excessive R_DS(on). A dedicated gate driver IC is required to deliver the 70 nC total gate charge efficiently and ensure fast, low-loss switching in the IRF640S.

What is the avalanche energy rating of IRF640S, and how is it validated?

The IRF640S is fully avalanche rated with 580 mJ single-pulse avalanche energy (E_AS) and 13 mJ repetitive avalanche energy (E_AR). These values are measured per JEDEC standard JESD24-1 using unclamped inductive test conditions (V_DD = 50 V, I_AS = 18 A, T_J = 25 °C), confirming robustness against inductive switching transients without parameter shift.

How does the D2PAK package of IRF640S compare thermally to TO-220 alternatives?

The IRF640S in D2PAK achieves 1.0 °C/W junction-to-case thermal resistance-comparable to high-performance TO-220 packages-but with significantly lower junction-to-ambient resistance (40 °C/W vs. ~62 °C/W for standard TO-220) due to larger copper area and direct PCB thermal coupling. This makes the IRF640S more effective in thermally dense layouts where heatsink attachment is impractical.

Is IRF640S RoHS-compliant, and what does the "PbF" suffix indicate?

Yes, the IRF640S is RoHS-compliant. The "PbF" suffix in ordering codes like IRF640STRRPbF denotes lead (Pb)-free termination, meeting EU RoHS Directive 2011/65/EU and China RoHS requirements. All IRF640S variants shipped post-2016 are halogen-free and Pb-free, with material compliance documented in Vishay's "99912" specification.

IRF640S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF640S FAQ

1.How can I place an order for IRF640S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640S reliable?

The price and inventory of IRF640S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640S is usually 5 days.

3.What payment methods are accepted for IRF640S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640S?

IRF640S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640S?

For technical support, including IRF640S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640S requirements.

6.How does Aetrix verify that IRF640S is sourced from the original manufacturer or authorized distributors?

All IRF640S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640S meets industry standards.

7.What is the process for return or replacement of IRF640S?

All IRF640S units undergo pre-shipment inspection (PSI). If there is an issue with IRF640S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640S part is unused and in its original packaging.

Return procedure for IRF640S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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