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Vishay Siliconix IRF644NPBF
- Part No.:
- IRF644NPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF644NPBF.pdf
- Description:
- MOSFET N-CH 250V 14A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,237
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Product details
Overview
IRF644NPBF from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in TO-220 package, featuring 0.240 Ω RDS(on) at VGS = 10 V, 54 nC total gate charge, and 175 °C maximum junction temperature. It delivers rugged avalanche capability (180 mJ single-pulse), fast switching (10 ns turn-on delay), and is widely deployed in offline SMPS, motor drive half-bridges, and DC-DC converter primary-side switches.
For engineers reviewing the IRF644NPBF datasheet, IRF644NPBF pinout, IRF644NPBF application, or IRF644NPBF equivalent, key selection criteria include its 250 V VDS, TO-220 thermal performance (RthJC = 1.0 °C/W), fully rated avalanche energy, and lead-free RoHS-compliant construction per Vishay S-83000 Rev. A.
Technical Context
This fifth-generation Power MOSFET uses advanced silicon processing to minimize on-resistance per die area while maintaining high dV/dt immunity (7.9 V/ns) and robust unclamped inductive switching behavior. Its gate threshold voltage (2.0–4.0 V) and low Qgd/Qg ratio (26/54 nC) support stable operation with standard 10 V gate drivers.
The device integrates a fast-recovery body diode (trr = 165–250 ns, Qrr = 1.0–1.6 µC) and exhibits linear derating (1.0 W/°C above 25 °C case temperature). Thermal resistance from junction-to-case is fixed at 1.0 °C/W, enabling predictable heatsink sizing for continuous 14 A conduction at TC ≤ 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports 230 VAC rectified bus designs with margin for surge and ringing |
| RDS(on) | 0.240 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 8.4 A DC current |
| Qg | 54 nC - determines gate driver power requirement and switching speed with 6.2 Ω resistor |
| EAS | 180 mJ - guarantees safe single-pulse inductive turn-off without external snubber in 5.0 µH loads |
| tr/tf | 21 ns / 17 ns - enables >500 kHz hard-switched operation with controlled EMI profile |
| TJ(max) | 175 °C - allows full-rated operation in industrial environments up to 100 °C ambient with proper heatsinking |
| ID(cont) | 14 A @ TC = 25 °C - defines maximum continuous current under ideal heatsink conditions |
Pinout & Package
IRF644NPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The package features 3 leads with defined orientation per Vishay drawing: Gate (left), Drain (center/tab), Source (right) when viewed with label side facing forward and leads down.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires ≥10 V for full enhancement; max ±20 V rating |
| D | Drain | High-voltage power input node; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential |
| S | Source | Power return path and gate reference; forms common node with driver ground in low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 180 mJ single-pulse energy withstand enables reliable unclamped inductive switching without external protection |
| Dynamic dV/dt rating | 7.9 V/ns immunity prevents false turn-on during high-speed voltage transients in bridge-leg configurations |
| 175 °C operating temperature | Supports extended thermal margin in sealed enclosures or high-ambient industrial settings without derating |
| Low Qgd/Qg ratio | 48% Miller charge fraction (26/54 nC) improves switching controllability and reduces risk of shoot-through |
| Lead (Pb)-free RoHS compliant | Meets EU Directive 2011/65/EU with SnAgCu termination; compatible with standard Pb-free reflow profiles |
Applications
| Offline AC-DC Power Supplies | Brushed DC Motor Drives |
|---|---|
Use Scenario: Primary-side switch in 50–200 W flyback converters operating from universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding; gated at 65–130 kHz. Use Value: 250 V VDS and 180 mJ EAS eliminate need for clamping circuits during line surges or transformer leakage spikes. |
Use Scenario: Half-bridge high-side switch driving 12–48 V brushed DC motors in industrial actuators and HVAC dampers. IC Role / Device Role / Timing Role: N-channel high-side power switch with bootstrap gate drive; handles bidirectional current during PWM commutation. Use Value: 0.240 Ω RDS(on) limits conduction loss to <1.2 W at 7 A, reducing heatsink size by 30% vs. higher-RDS(on) alternatives. |
| DC-DC Converters | LED Driver Circuits |
Use Scenario: Primary switch in isolated forward or push-pull converters for telecom and server power distribution. IC Role / Device Role / Timing Role: Fast-switching power transistor handling 200–500 kHz PWM; subjected to repetitive avalanche stress during reset cycles. Use Value: 15 mJ repetitive avalanche rating ensures long-term reliability under continuous reset-induced drain voltage overshoot. |
Use Scenario: Constant-current switch in high-brightness LED string drivers for street lighting and architectural applications. IC Role / Device Role / Timing Role: Low-duty-cycle PWM switch regulating average LED current; exposed to high dv/dt during rapid turn-off. Use Value: 7.9 V/ns dV/dt rating prevents spurious turn-on during LED string voltage collapse, eliminating flicker and EMI. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 0.27 Ω RDS(on), TO-220FP package (full-pack), lower Qg (38 nC) | Better voltage margin but higher conduction loss; optimized for 400 V bus systems | Select when designing for 380–400 VDC input where 250 V rating is insufficient |
| IXTP12N25P | 250 V VDS, 0.28 Ω RDS(on), 12 A ID, lower EAS (120 mJ), TO-220 | Near-identical voltage rating but reduced current and avalanche capability | Acceptable for lower-power (<100 W) or non-avalanche-critical applications with tighter cost targets |
Compared with STP20NM50FP and IXTP12N25P, the IRF644NPBF offers the best balance of 250 V rating, 14 A current capacity, and industry-leading 180 mJ avalanche energy-making it preferred for cost-sensitive, thermally constrained, and reliability-critical 230 VAC-fed power stages.
Availability
IRF644NPBF is available at Aetrix Electronics and suitable for offline AC-DC power supplies, brushed DC motor drives, and DC-DC converter primary-side switching requiring stable component supply across multi-year production cycles.
Supply support for IRF644NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.
The IRF644NPBF belongs to Vishay's fifth-generation Power MOSFET family, engineered specifically for high-reliability industrial and commercial switching power applications demanding robust avalanche performance and thermal stability.
FAQ
What is the maximum continuous drain current for IRF644NPBF at 100 °C case temperature?
The IRF644NPBF supports 9.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 14 A at 25 °C using the 1.0 W/°C factor, and must be validated with actual heatsink thermal resistance and ambient conditions in the final design.
Does IRF644NPBF have a built-in body diode, and what are its key recovery characteristics?
Yes, the IRF644NPBF integrates a parasitic body diode with typical reverse recovery time (trr) of 165–250 ns and reverse recovery charge (Qrr) of 1.0–1.6 µC at TJ = 25 °C, IF = 14 A, and dI/dt = 100 A/µs. These values are critical for synchronous rectification and half-bridge shoot-through analysis.
Is IRF644NPBF pin-compatible with legacy IRF644 variants such as IRF644N or IRF644NS?
Yes, IRF644NPBF shares identical TO-220 pinout, terminal assignment (G-D-S), and mechanical footprint with IRF644N and IRF644NS. All three use the same die and packaging process-only the termination (Pb-free vs. SnPb) and tape-and-reel options differ per ordering code.
What is the gate threshold voltage range for IRF644NPBF, and how does it affect drive circuit design?
The IRF644NPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 µA. To ensure full enhancement and minimal RDS(on), gate drive must exceed 10 V-designs using 5 V logic-level drivers will not achieve rated on-resistance and should avoid this part.
Can IRF644NPBF be used in parallel configurations, and what design considerations apply?
Yes, the IRF644NPBF is explicitly designed for paralleling, as noted in its Features list. Key requirements include matched gate resistors (≤1 Ω tolerance), symmetrical PCB layout to minimize loop inductance, and individual source resistors (0.05–0.1 Ω) for current balancing-especially critical above 20 A total load.
IRF644NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF644NPBF FAQ
1.How can I place an order for IRF644NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644NPBF reliable?
The price and inventory of IRF644NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644NPBF is usually 5 days.
3.What payment methods are accepted for IRF644NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF644NPBF?
IRF644NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644NPBF?
For technical support, including IRF644NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644NPBF requirements.
6.How does Aetrix verify that IRF644NPBF is sourced from the original manufacturer or authorized distributors?
All IRF644NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644NPBF meets industry standards.
7.What is the process for return or replacement of IRF644NPBF?
All IRF644NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF644NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644NPBF part is unused and in its original packaging.
Return procedure for IRF644NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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