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Vishay Siliconix IRF644PBF-BE3
- Part No.:
- IRF644PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF644PBF-BE3.pdf
- Description:
- MOSFET N-CH 250V 14A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:457
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Product details
Overview
IRF644PBF-BE3 from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in TO-220AB package, featuring 0.28 Ω RDS(on) at VGS = 10 V, 68 nC total gate charge, and repetitive avalanche rating-designed for hard-switched DC-DC converters, motor control stages, and industrial power supplies.
For engineers reviewing the IRF644PBF-BE3 datasheet, IRF644PBF-BE3 pinout, IRF644PBF-BE3 application, or IRF644PBF-BE3 equivalent, key selection criteria include its 250 V VDS, 1.0 °C/W RthJC, 550 mJ single-pulse avalanche energy, and RoHS-compliant/halogen-free construction per Vishay S21-0853-Rev. E.
Technical Context
This third-generation silicon power MOSFET uses planar vertical DMOS technology with optimized cell layout for low conduction loss and robust switching performance. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while dynamic dV/dt rating (4.8 V/ns) supports reliable operation in noisy high-di/dt environments.
The device integrates a fast-recovery body diode (trr = 250–500 ns, Qrr = 2.3–4.6 μC) and is rated for repetitive avalanche (IAR = 14 A, EAR = 13 mJ), enabling snubberless inductive load handling in flyback and buck converters without external protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports input voltages up to 200 V DC bus with 25 % safety margin in offline SMPS |
| RDS(on) @ VGS = 10 V | 0.28 Ω - limits conduction loss to ≤ 3.9 W at 14 A continuous drain current |
| Qg | 68 nC - determines gate driver power requirement (~1.4 mW average at 100 kHz, VGS swing 0–10 V) |
| EAS | 550 mJ - enables unclamped inductive switching at 14 A without failure under transient overloads |
| tr/tf | 24 ns / 49 ns - supports switching frequencies up to 500 kHz with controlled EMI in hard-switched topologies |
| RthJC | 1.0 °C/W - allows 125 W power dissipation with ≤ 125 °C junction rise above 25 °C case temperature |
Pinout & Package
IRF644PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized lead pitch (2.54 mm), and 1.0 °C/W junction-to-case thermal resistance. The package supports mechanical mounting via M3 screw and accommodates heatsink interface grease for optimal thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 11 nC Qgs ensures fast turn-on with minimal Miller effect |
| D (Drain) | High-side power terminal | Internally connected to metal tab; requires electrical isolation when mounted to heatsink |
| S (Source) | Power return and reference | Serves as local ground reference for gate drive; internal source inductance LS = 7.5 nH affects switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 14 A repetitive avalanche current and 13 mJ energy without degradation-enables reliable operation in inductive switching without snubbers |
| Dynamic dV/dt immunity | Rated for 4.8 V/ns-prevents false turn-on during high-speed voltage transients in bridge configurations |
| Fast body diode recovery | trr = 250–500 ns, Qrr = 2.3–4.6 μC-reduces switching loss and voltage overshoot in synchronous rectification and freewheeling paths |
| Low gate charge asymmetry | Qgd/Qg = 51 %-provides predictable Miller plateau timing for precise gate driver design and SOA compliance |
Applications
| Switch-Mode Power Supply | DC Motor Drive |
|---|---|
Use Scenario: Primary-side switch in 100–200 W offline flyback converter with universal AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 65–130 kHz with hard switching. Use Value: 250 V VDS and 550 mJ EAS eliminate need for clamping circuits during output short-circuit events. | Use Scenario: H-bridge upper-leg switch driving 24 V brushed DC motor in industrial actuator. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by bootstrap gate driver; handles bidirectional current up to 14 A peak. Use Value: Repetitive avalanche rating (IAR = 14 A) prevents failure during motor stall or rapid direction reversal. |
| Uninterruptible Power Supply | LED Constant-Current Driver |
Use Scenario: Inverter stage in line-interactive UPS delivering 500 VA output with battery backup. IC Role / Device Role / Timing Role: Low-loss switching element in full-bridge inverter converting 48 V DC battery to 120/230 V AC. Use Value: 0.28 Ω RDS(on) minimizes conduction loss at 10 A RMS, improving system efficiency and thermal margin. | Use Scenario: Buck-mode constant-current regulator for high-brightness LED strings in street lighting. IC Role / Device Role / Timing Role: Main power switch modulating LED current at 20–100 kHz; body diode conducts freewheeling current. Use Value: Fast body diode (trr = 250 ns) reduces reverse recovery loss and EMI compared to standard rectifiers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 0.23 Ω RDS(on), TO-220FP package (full-pack, insulated tab) | Higher voltage rating suits 400 V DC bus designs; lower RDS(on) reduces conduction loss but increases gate charge (85 nC) | Prefer when higher voltage margin or lower on-resistance is required; verify gate drive capability for increased Qg |
| IXTP12N25P | 250 V VDS, 0.27 Ω RDS(on), TO-220 package, no avalanche rating | Lacks repetitive avalanche specification-requires external clamping in inductive switching | Select only in non-inductive or snubber-protected topologies where avalanche stress is absent |
Compared with STP20NM50FP and IXTP12N25P, the IRF644PBF-BE3 offers balanced trade-offs: verified repetitive avalanche capability for ruggedness, moderate gate charge for driver compatibility, and halogen-free/RoHS-compliant construction-making it optimal for cost-sensitive industrial power stages requiring proven field reliability.
Availability
IRF644PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, offline AC-DC power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.
Supply support for IRF644PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The IRF644PBF-BE3 belongs to Vishay's third-generation power MOSFET product line, engineered for commercial and industrial power conversion applications demanding ruggedness, fast switching, and cost-effective thermal performance in TO-220 packages.
FAQ
What is the maximum continuous drain current for IRF644PBF-BE3 at 100 °C case temperature?
The IRF644PBF-BE3 supports 8.5 A continuous drain current at TC = 100 °C, derated linearly from 14 A at 25 °C using a 1.0 W/°C derating factor. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 91039, and reflects safe operation within thermal limits when mounted on an adequately sized heatsink.
Does IRF644PBF-BE3 have a fully rated avalanche capability?
Yes, the IRF644PBF-BE3 is explicitly rated for repetitive avalanche operation: IAR = 14 A and EAR = 13 mJ under specified test conditions (VDD = 50 V, TJ ≤ 150 °C). This is documented in the Absolute Maximum Ratings section and validated per Figure 12 in the Vishay S21-0853-Rev. E datasheet.
What is the gate-source threshold voltage range for IRF644PBF-BE3?
The gate-source threshold voltage (VGS(th)) for IRF644PBF-BE3 is specified as 2.0 V minimum to 4.0 V maximum at VDS = VGS and ID = 250 μA. This range ensures compatibility with standard 5 V and 10 V logic-level gate drivers while maintaining noise immunity in industrial environments.
Is IRF644PBF-BE3 suitable for use in synchronous rectification topologies?
No-IRF644PBF-BE3 is not optimized for synchronous rectification. Its body diode recovery time (trr = 250–500 ns) and Qrr (2.3–4.6 μC) are significantly higher than dedicated sync-FETs. For synchronous rectification, devices with <100 ns trr and optimized Qrr/Qg ratios are recommended instead of IRF644PBF-BE3.
What does the "-BE3" suffix indicate in IRF644PBF-BE3?
The "-BE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging variant, compliant with JEDEC JS709B and IPC-1752A standards. It specifies matte tin plating, no brominated flame retardants, and full RoHS-6 compliance-distinct from the "PbF" variant which is Pb-free but not halogen-free.
IRF644PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF644PBF-BE3 FAQ
1.How can I place an order for IRF644PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644PBF-BE3 reliable?
The price and inventory of IRF644PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF644PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF644PBF-BE3?
IRF644PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644PBF-BE3?
For technical support, including IRF644PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644PBF-BE3 requirements.
6.How does Aetrix verify that IRF644PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF644PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF644PBF-BE3?
All IRF644PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF644PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF644PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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