Infineon Technologies IRF6723M2DTR1P

Overview

IRF6723M2DTR1P from Infineon Technologies is a dual common-drain N-channel Power MOSFET in DirectFET M2 package, optimized for high-side switching in multiphase DC-DC converters. It integrates two 30 V, 5.2 mΩ (at V_GS = 10 V) silicon dies with ultra-low package inductance (<0.5 nH), 9.4 nC total gate charge, and 0.7 mm profile-enabling high-frequency, high-efficiency power delivery to modern processors.

For engineers reviewing the IRF6723M2DTR1P datasheet, IRF6723M2DTR1P pinout, IRF6723M2DTR1P application, or IRF6723M2DTR1P equivalent, key selection criteria include dual-die thermal coupling, dual-sided cooling capability, R_DS(on) matching between channels (±5%), gate threshold voltage consistency (1.35–2.35 V), and compatibility with SO-8 footprint layouts.

Technical Context

This device implements two matched HEXFET® silicon dies in a single DirectFET M2 metal-can package with top-side drain terminals and bottom-side source/gate connections. Its dual common-drain configuration enables synchronous rectification or parallel high-side control without external interconnect inductance.

The package supports double-sided thermal management: top-side heatsinking via the exposed drain copper and bottom-side PCB conduction through soldered source pads. Gate drive is optimized for low-Q_gd/Q_gs2 ratio (3.3 nC / 1.2 nC), minimizing Miller-induced switching delay and improving hard-switching robustness at >1 MHz frequencies.

Key Specifications

Pinout & Package

DirectFET M2 package: metal-can outline with top-side dual drain terminals (D1/D2), bottom-side dual source pads (S1/S2), and dual gate pads (G1/G2); footprint matches SO-8 but with no plastic body and full-copper thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-side MOSFET applications.

Compared with IRF6723M2DTR1P, IRF6722M2DTR1P trades 15% higher conduction loss for broader gate drive tolerance, while SiR626DP offers lower R_DS(on) but increases component count and layout complexity-making IRF6723M2DTR1P optimal for space-constrained, high-frequency multiphase VRMs where thermal coupling and footprint are critical.

Availability

IRF6723M2DTR1P is available at Aetrix Electronics and suitable for server VRM design, GPU power delivery, AI accelerator board development, and telecom intermediate bus converters requiring stable component supply across extended production cycles.

Supply support for IRF6723M2DTR1P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-density DC-DC conversion in computing and communications infrastructure where thermal performance and layout efficiency are primary design constraints.

FAQ

What is the maximum continuous drain current per die at 70°C ambient?

The IRF6723M2DTR1P supports 13 A continuous drain current per die at T_A = 70°C with V_GS = 10 V, based on its 56 °C/W junction-to-ambient thermal resistance and derating factor of 0.018 W/°C above 25°C. This rating assumes proper PCB copper area (1 in² Cu) and natural convection cooling per AN-1035 guidelines.

Can both MOSFETs be driven independently for phase interleaving?

Yes-G1 and G2 are fully isolated gate terminals with independent bond wires and pads. Each gate has 0.4 Ω intrinsic resistance and identical threshold (1.35–2.35 V), enabling precise timing control for interleaved operation without cross-talk or skew. Layout must maintain symmetrical gate trace lengths to preserve phase alignment.

Is the body diode suitable for synchronous rectification?

The integrated body diode has 17 nC reverse recovery charge (Q_rr) and 16 ns trr at 370 A/µs di/dt, making it suitable for synchronous rectification in buck converters up to 1 MHz. However, external Schottky clamping is recommended if V_SD drop (>1.0 V) impacts light-load efficiency targets below 10% load.

Does the DirectFET M2 package require special soldering profiles?

Yes-the DirectFET M2 package requires adherence to Infineon Application Note AN-1035, specifying peak solder temperature ≤260°C for ≤10 seconds, ramp rates ≤3°C/s, and preheat soak at 150°C for 90–120 seconds. Vapor-phase reflow is preferred over convection to ensure uniform heating of the metal can and prevent voiding under the SB thermal pad.