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Infineon Technologies IRF6802SDTR1PBF
- Part No.:
- IRF6802SDTR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- DirectFET™ Isometric SA
- Datasheet:
-
IRF6802SDTR1PBF.pdf
- Description:
- MOSFET 2N-CH 25V 16A DIRECTFETSA
- Quantity:
- Payment:
- Shipping:
Inventory:5,203
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Product details
Overview
IRF6802SDTR1PBF from Infineon Technologies is a dual N-channel MOSFET in DirectFET SA package, rated for 25 V VDS, 16 A continuous drain current per channel, and 3.5 mΩ typical RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF6802SDTR1PBF datasheet, IRF6802SDTR1PBF pinout, IRF6802SDTR1PBF application, or IRF6802SDTR1PBF equivalent, key selection criteria include dual-channel thermal coupling, low gate charge (Qg = 19 nC), trench MOSFET architecture, and DirectFET's top-side cooling capability for high-power density designs.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single ultra-thin DirectFET SA package with common-source configuration. Its trench-based silicon process enables low RDS(on) and fast switching (trise = 12 ns, tfall = 10 ns) under 10 V gate drive.
The DirectFET SA construction places source and drain terminals on opposite faces, enabling PCB-mounted thermal vias directly beneath the package for efficient heat extraction. Gate threshold voltage is specified at 1.2–2.2 V, supporting 3.3 V logic-level drive compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-to-source blocking voltage for 12 V input rail applications with margin. |
| ID (continuous) | 16 A per channel - Sustains 16 A DC current with case temperature ≤ 70 °C in typical PCB layout. |
| RDS(on) @ VGS=10 V | 3.5 mΩ typical - Enables <1 W conduction loss at 16 A, critical for high-efficiency buck converters. |
| Qg | 19 nC - Low total gate charge reduces driver power and switching losses in 500 kHz–1 MHz operation. |
| Thermal Resistance RθJC | 1.4 °C/W - Junction-to-case value confirms suitability for direct heatsink mounting via top-side copper. |
| VGS(th) | 1.2–2.2 V - Ensures reliable turn-on with standard 3.3 V microcontroller GPIO without level shifting. |
Pinout & Package
IRF6802SDTR1PBF uses the DirectFET SA surface-mount package: 5.0 mm × 5.8 mm footprint, 0.7 mm height, top-side source/thermal pad and bottom-side drain terminals. No discrete leads - terminals are soldered directly to PCB copper layers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top-side large copper area | Source (both channels) | Primary thermal path and low-inductance source return; requires direct connection to internal ground plane. |
| Bottom-side exposed metal | Drain (both channels) | High-current drain node; must be routed to power plane with minimum trace length to reduce switching loop inductance. |
| Two small top-side pads | Gates (G1, G2) | Independent gate inputs enabling asynchronous control or paralleled operation; each accepts 0–12 V drive. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Reduces board area by 40% vs. two discrete SO-8 MOSFETs while maintaining independent gate control. |
| DirectFET top-side cooling | Enables >2× higher power density than QFN packages by routing heat through component top into heatsink or copper pour. |
| Trench MOSFET technology | Delivers 30% lower RDS(on) per mm² than planar equivalents, improving efficiency in space-constrained 12 V systems. |
| Logic-level gate threshold | Guarantees full enhancement at 3.3 V, eliminating need for gate driver ICs in MCU-controlled battery disconnect circuits. |
Applications
| Battery Protection Circuit | Point-of-Load DC-DC Converter |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration in Li-ion battery packs to block reverse current and enable charge/discharge control. IC Role / Device Role / Timing Role: High-side and low-side synchronous switch providing bidirectional current blocking and low-loss conduction path. Use Value: 3.5 mΩ RDS(on) limits voltage drop to <56 mV at 16 A, preserving battery capacity and reducing thermal stress during fast charging. | Use Scenario: Synchronous rectification stage in 12 V → 1.2 V buck converter for FPGA or ASIC core supplies. IC Role / Device Role / Timing Role: Bottom-side synchronous rectifier replacing Schottky diode to minimize conduction loss during low-duty-cycle operation. Use Value: Achieves >92% efficiency at 20 A output due to combined low RDS(on) and 19 nC Qg, reducing system cooling requirements. |
| Motor Drive Half-Bridge | Hot-Swap Controller |
Use Scenario: Low-side switch in 24 V BLDC motor gate driver stage for industrial actuators. IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling PWM current flow to motor winding with minimal shoot-through risk. Use Value: 12 ns rise time and 1.2–2.2 V VGS(th) allow precise 20 kHz PWM timing alignment with gate drivers, reducing torque ripple. | Use Scenario: Inrush current limiter and fault isolation switch in 12 V telecom line cards. IC Role / Device Role / Timing Role: Load switch managing hot-plug sequencing and overcurrent shutdown response. Use Value: Dual-channel structure allows redundant current sensing and independent gate control for fast (<1 μs) fault isolation during short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6712MTRPBF | Same DirectFET SA package but 30 V rating, 4.2 mΩ RDS(on), 22 nC Qg. | Higher voltage margin suits 24 V systems; slightly higher conduction loss impacts efficiency below 10 A. | Select when design requires >25 V transient tolerance or legacy 24 V bus compatibility. |
| SiR872DP-T1-GE3 | SO-8 dual N-channel, 30 V, 5.1 mΩ, 24 nC, conventional package with bottom-side thermal pad. | Larger footprint and higher RDS(on) limit power density; better suited for manual assembly or lower-frequency designs. | Choose if DirectFET reflow process is unavailable or if board-level thermal vias cannot be implemented. |
Compared with IRF6802SDTR1PBF, IRF6712MTRPBF trades minor efficiency loss for wider voltage headroom, while SiR872DP-T1-GE3 sacrifices thermal performance and size for assembly flexibility-neither offers identical top-side cooling or 25 V optimized RDS(on).
Availability
IRF6802SDTR1PBF is available at Aetrix Electronics and suitable for battery management systems, point-of-load converters, motor drive half-bridges, and hot-swap controllers requiring stable component supply and consistent parametric performance across production lots.
Supply support for IRF6802SDTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The DirectFET product line targets high-frequency, high-density power conversion applications where thermal performance and package inductance critically impact system efficiency and reliability.
FAQ
What is the maximum pulsed drain current rating for IRF6802SDTR1PBF?
The absolute maximum pulsed drain current (IDM) is 64 A per channel, defined for pulse width ≤ 10 μs and duty cycle ≤ 1%. This rating assumes TC = 25 °C and accounts for transient thermal limits-not sustainable in continuous operation. Derating is required above 70 °C case temperature.
Does IRF6802SDTR1PBF support parallel operation of its two channels?
Yes-the two N-channel MOSFETs share no internal connection other than substrate; gates, sources, and drains are fully isolated. Independent gate drive enables true parallel operation with external current balancing, or asymmetric use (e.g., one channel for main switch, the other for auxiliary function).
Can IRF6802SDTR1PBF be used with 5 V gate drive?
Yes-its VGS(th) range (1.2–2.2 V) and RDS(on) spec at VGS = 4.5 V (5.2 mΩ max) confirm robust enhancement at 5 V. At 5 V, RDS(on) increases ~50% versus 10 V, raising conduction loss but remaining usable in medium-current, thermally relaxed designs.
Is the top-side thermal pad electrically isolated from the source terminals?
No-the large top-side copper area is internally bonded to the source metallization of both channels. It must be connected to the source net (typically system ground) and cannot serve as an isolated heatsink. Electrical isolation would require external insulation, which voids thermal performance claims.
IRF6802SDTR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 16A
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350pF @ 13V
- Power - Max:
- 1.7W
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SA
IRF6802SDTR1PBF FAQ
1.How can I place an order for IRF6802SDTR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6802SDTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6802SDTR1PBF reliable?
The price and inventory of IRF6802SDTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6802SDTR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6802SDTR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6802SDTR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6802SDTR1PBF?
IRF6802SDTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6802SDTR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6802SDTR1PBF?
For technical support, including IRF6802SDTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6802SDTR1PBF requirements.
6.How does Aetrix verify that IRF6802SDTR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6802SDTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6802SDTR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6802SDTR1PBF?
All IRF6802SDTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6802SDTR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6802SDTR1PBF part is unused and in its original packaging.
Return procedure for IRF6802SDTR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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