Vishay Siliconix IRF710

Overview

IRF710 from Vishay Siliconix is a 400 V, 2.0 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in offline SMPS, AC-DC adapters, and motor control circuits. It features 3.6 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 120 mJ single-pulse avalanche energy.

For engineers reviewing the IRF710 datasheet, IRF710 pinout, IRF710 application, or IRF710 equivalent, key selection criteria include its 400 V V_DS, repetitive avalanche rating, fast 8 ns turn-on delay, and TO-220AB thermal performance with R_thJC = 3.5 °C/W - critical for high-reliability industrial power stages.

Technical Context

The IRF710 employs third-generation planar vertical DMOS technology with ruggedized die design enabling repetitive avalanche operation up to 2.0 A and 3.6 mJ. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (170 pF C_iss) support simple drive requirements using standard logic-level gate drivers.

Thermal design centers on the TO-220AB package's low junction-to-case resistance (3.5 °C/W), enabling 36 W continuous dissipation at T_C = 25 °C. The integrated body diode exhibits 240–540 ns reverse recovery time and 0.85–1.6 μC Q_rr, suitable for non-synchronous flyback and clamp circuits.

Key Specifications

Pinout & Package

IRF710 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for heatsink mounting and manual assembly. Thermal resistance from junction to case is 3.5 °C/W, and mechanical mounting uses M3/6-32 screw with 1.1 N·m torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP4NK50ZFP and FQP4N40, the IRF710 provides verified repetitive avalanche operation and superior dV/dt immunity - essential for reliability in unregulated industrial loads - while maintaining identical 400 V rating and TO-220AB mechanical compatibility.

Availability

IRF710 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor control circuits, and LED driver designs requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF710 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF710 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness and ease of use in cost-sensitive offline power conversion systems.

FAQ

What is the maximum continuous drain current for IRF710 at 100 °C case temperature?

The IRF710 supports 1.2 A continuous drain current at T_C = 100 °C, derived from its 2.0 A rating at 25 °C and linear derating factor of 0.29 W/°C. This value reflects thermal limitations of the TO-220AB package under real-world heatsink conditions and must be validated against actual board layout and airflow in the target IRF710 application.

Does IRF710 have a RoHS-compliant version, and what is its ordering code?

Yes, the RoHS-compliant version of IRF710 is designated IRF710PbF-BE3, indicating lead-free and halogen-free construction per Vishay's material compliance standards. This variant maintains identical electrical and thermal specifications as the base IRF710 and is the recommended version for new designs targeting EU and global environmental compliance.

Can IRF710 be used in synchronous rectification topologies?

No, the IRF710 is not suitable for synchronous rectification due to its relatively high 3.6 Ω R_DS(on) and lack of optimized body diode characteristics such as low Q_rr or fast t_rr. Synchronous rectifiers require sub-100 mΩ R_DS(on) and tightly controlled reverse recovery; the IRF710 is designed for primary-side switching, not secondary-side rectification.

What is the gate-source leakage current specification for IRF710 at ±20 V?

The gate-source leakage current for IRF710 is specified as ±100 nA maximum at V_GS = ±20 V and T_J = 25 °C. This low leakage ensures stable gate bias in high-impedance drive circuits and minimizes standby power loss in always-on IRF710-based control stages.

How does the IRF710's avalanche energy rating compare between single-pulse and repetitive conditions?

The IRF710 delivers 120 mJ single-pulse avalanche energy (E_AS) under defined test conditions, while its repetitive avalanche energy (E_AR) is rated at 3.6 mJ per pulse. This 33× difference reflects thermal accumulation limits - repetitive operation requires strict pulse width and duty cycle control per Figure 11 in the IRF710 datasheet to avoid junction overheating.