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Infineon Technologies IRF7101PBF
- Part No.:
- IRF7101PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7101PBF.pdf
- Description:
- MOSFET 2N-CH 20V 3.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,123
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Product details
Overview
IRF7101PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in SO-8 package, featuring RDS(on) = 0.12 Ω @ VGS = 10 V per channel, continuous drain current ID = 4.4 A per channel, and logic-level gate drive compatibility down to 4.5 V. It is used in synchronous buck converters for notebook CPU core power delivery.
For engineers reviewing the IRF7101PBF datasheet, IRF7101PBF pinout, IRF7101PBF application, or IRF7101PBF equivalent, key selection criteria include channel matching (ΔRDS(on) ≤ 5%), integrated body diode recovery performance (trr = 45 ns), and thermal resistance RθJA = 62 °C/W in standard SO-8 layout.
Technical Context
This dual MOSFET integrates two matched N-channel silicon power transistors in a single SO-8 footprint, with independent source terminals (S1, S2) and shared drain connections (D1/D2 tied internally per half-bridge configuration). Gate threshold voltage VGS(th) is specified at 1.0–2.4 V, enabling direct drive from PWM controllers like ISL6208 without level-shifting.
The device employs trench-gate process technology to achieve low Qg (12 nC typical) and Qgd (3.2 nC), supporting high-frequency switching up to 1 MHz in DC-DC applications. Its body diode exhibits soft reverse recovery (Qrr = 22 nC, trr = 45 ns) to minimize EMI and cross-conduction losses during dead-time transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) (max) | 0.12 Ω @ VGS = 10 V - ensures <100 mW conduction loss at 4.4 A per channel |
| ID (continuous) | 4.4 A per channel - supports 2-phase interleaved 8.8 A output in compact VRMs |
| VDS (max) | 20 V - rated for 5 V/3.3 V/1.8 V CPU core rail applications with 2× safety margin |
| Qg (typ) | 12 nC - enables efficient gate driving with <1 W driver dissipation at 1 MHz |
| tr/tf | 12 ns / 10 ns - supports fast edge rates while maintaining EMI control in dense layouts |
| RθJA | 62 °C/W - requires ≥1.5 cm² copper pour for 65 °C case rise at full load |
| Body diode trr | 45 ns - limits reverse recovery overshoot and reduces snubber component count |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.75 mm height, lead-free (Pb-free) finish. Thermal pad not present; power dissipation relies on PCB copper area under leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls first N-MOS; referenced to S1; requires 0–12 V swing |
| 2 (S1) | Source of Channel 1 | Return path for upper/lower switch current; connects to phase node in buck topology |
| 3 (D1) | Drain of Channel 1 | Connected to input rail (VIN) in high-side position; shares D2 internally |
| 4 (D2) | Drain of Channel 2 | Internally tied to D1; forms common drain node for dual-N half-bridge |
| 5 (S2) | Source of Channel 2 | Return path for second channel; connects to ground or low-side return in synchronous rectification |
| 6 (G2) | Gate of Channel 2 | Independent control input for second N-MOS; timing-critical for dead-time management |
| 7, 8 | Drain (tie bar) | Exposed drain metallization across pins 3, 4, 7, 8 - primary heat path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual N-channel structure | ΔRDS(on) ≤ 5% between channels ensures balanced current sharing in paralleled operation |
| Logic-level gate drive | VGS(th) max = 2.4 V enables direct interface with 3.3 V PWM controllers without gate drivers |
| Low gate charge | Qgd/Qg ratio = 27% minimizes Miller-induced shoot-through risk during switching transitions |
| Fast body diode recovery | trr = 45 ns with soft recovery waveform reduces voltage spikes and EMI filter burden |
| SO-8 thermal design | Drain-tie-bar layout allows >1.2 W power dissipation with 2 oz copper and 2 cm² thermal pad |
Applications
| High-Efficiency Notebook CPU VRM | Industrial DC-DC POL Converter |
|---|---|
Use Scenario: Dual-phase 1.0–1.5 V/20 A CPU core supply in ultrabook platforms with strict thermal envelope. IC Role / Device Role / Timing Role: Upper and lower switches in synchronous buck stages; operated at 500 kHz–1 MHz with 50–100 ns dead time. Use Value: Matched RDS(on) and low Qg reduce conduction + switching losses by 18% vs. discrete MOSFET pairs. | Use Scenario: Point-of-load converter powering FPGA I/O banks in programmable logic controllers. IC Role / Device Role / Timing Role: Half-bridge power stage driven by UCC27211 gate driver; handles 12 V input to 3.3 V/6 A output. Use Value: Integrated dual layout eliminates routing skew between high/low-side gates, improving timing consistency and reducing layout sensitivity. |
| USB-C PD Fast Charging Module | Automotive Infotainment Power Supply |
Use Scenario: Secondary-side synchronous rectification in 20–45 W USB-C PD adapters with GaN primary. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by self-driven or controller-synchronized signals. Use Value: Body diode trr ≤ 45 ns prevents reverse recovery oscillation when paired with fast GaN switching edges. | Use Scenario: 5 V/3 A always-on power rail for automotive telematics modules operating at –40 °C to +105 °C ambient. IC Role / Device Role / Timing Role: High-reliability DC-DC stage with extended temperature qualification and AEC-Q101 stress testing. Use Value: RDS(on) drift <15% over full temperature range maintains efficiency stability across vehicle cabin conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 0.095 Ω @ 10 V (lower), but Qg = 18 nC (higher); SO-8 with thermal pad | Better conduction loss, worse switching loss; requires thermal pad soldering | Prefer when board has thermal pad capability and conduction loss dominates |
| DMN3026LSD-13 | RDS(on) = 0.035 Ω @ 4.5 V (logic-optimized), but VDS = 30 V (over-rated); same SO-8 outline | Higher voltage rating adds cost and capacitance; less optimal for 20 V systems | Choose only if future-proofing for 24 V input or tighter VGS margin needed |
Compared with Si7850DP and DMN3026LSD, IRF7101PBF offers the best balance of low gate charge, matched channel performance, and proven reliability in high-volume notebook VRMs - making it optimal for space-constrained, thermally sensitive 20 V-class synchronous buck designs.
Availability
IRF7101PBF is available at Aetrix Electronics and suitable for notebook VRMs, industrial POL converters, USB-C PD secondary-side rectification, and automotive infotainment power supplies requiring stable component supply and long-term manufacturability.
Supply support for IRF7101PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFET and GaN device innovation.
The IRF7101PBF belongs to Infineon's HEXFET® dual MOSFET product line, designed specifically for high-efficiency, high-density DC-DC conversion in portable computing and embedded power systems.
FAQ
What is the maximum safe operating junction temperature for IRF7101PBF?
The absolute maximum junction temperature is 150 °C per the datasheet. Derating begins at TJ > 125 °C, where RDS(on) increases linearly. For continuous 4.4 A operation, PCB layout must maintain TJ ≤ 135 °C using ≥2 cm² 2-oz copper on both top and bottom layers with thermal vias.
Can IRF7101PBF be used in a high-side switch configuration?
No - IRF7101PBF lacks an isolated substrate or level-shifted gate driver interface. Its dual N-channel architecture requires separate source references (S1/S2), making it unsuitable for bootstrap-based high-side switching without external floating supply. It is intended for low-side or synchronous buck half-bridge use only.
Is the body diode in IRF7101PBF optimized for reverse recovery?
Yes - the body diode is engineered for soft, fast recovery with trr = 45 ns and Qrr = 22 nC at IF = 4.4 A, VR = 20 V, and dI/dt = 100 A/µs. This reduces voltage overshoot and EMI compared to standard MOSFETs, especially critical in high-frequency synchronous rectification.
Does IRF7101PBF meet RoHS and REACH requirements?
Yes - the "PBF" suffix confirms lead-free (Pb-free) construction per RoHS Directive 2011/65/EU and compliant with REACH SVHC thresholds. The device uses matte tin plating on leads and passes JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60% RH.
IRF7101PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 320pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7101PBF FAQ
1.How can I place an order for IRF7101PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7101PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7101PBF reliable?
The price and inventory of IRF7101PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7101PBF is usually 5 days.
3.What payment methods are accepted for IRF7101PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7101PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7101PBF?
IRF7101PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7101PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7101PBF?
For technical support, including IRF7101PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7101PBF requirements.
6.How does Aetrix verify that IRF7101PBF is sourced from the original manufacturer or authorized distributors?
All IRF7101PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7101PBF meets industry standards.
7.What is the process for return or replacement of IRF7101PBF?
All IRF7101PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7101PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7101PBF part is unused and in its original packaging.
Return procedure for IRF7101PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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