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Infineon Technologies IRF7101TRPBF
- Part No.:
- IRF7101TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7101TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 3.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,250
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Product details
Overview
IRF7101TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in SO-8 package, configured as two independent logic-level power switches with RDS(on) = 0.12 Ω @ VGS = 10 V and 0.22 Ω @ VGS = 4.5 V per channel, rated for 20 V VDS and 4.7 A continuous drain current, used in DC-DC converter synchronous rectification and load switching.
For engineers reviewing the IRF7101TRPBF datasheet, IRF7101TRPBF pinout, IRF7101TRPBF application, or IRF7101TRPBF equivalent, key selection criteria include dual-channel logic-level gate drive compatibility, low RDS(on) at 4.5 V, SO-8 thermal performance, and body diode recovery characteristics for high-frequency switching.
Technical Context
This dual N-channel MOSFET integrates two matched enhancement-mode silicon devices in a single SO-8 package, sharing no internal connection between channels - each has independent source, drain, and gate terminals. It supports independent control of both FETs with threshold voltage VGS(th) = 1.0–2.4 V and gate charge QG = 9.5 nC typical per channel.
The device features fast switching (td(on) = 10 ns, tf = 15 ns), low gate-to-drain charge QGD = 3.0 nC, and specified body diode reverse recovery time trr = 35 ns at IF = 2.5 A, enabling efficient operation in 500 kHz–1 MHz synchronous buck converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - maximum drain-source blocking voltage; sets upper limit for input/output rail voltage in low-voltage DC-DC stages. |
| RDS(on) @ 10 V | 0.12 Ω - conduction loss of ~2.8 mW per amp² at full gate drive; enables high-efficiency power delivery below 5 V output. |
| RDS(on) @ 4.5 V | 0.22 Ω - usable with 3.3 V or 5 V logic-level microcontrollers without gate drivers; critical for compact portable designs. |
| ID (continuous) | 4.7 A per channel - sustained current capability with SO-8 package at TA = 25 °C; requires PCB copper area for thermal management. |
| QG | 9.5 nC - total gate charge per channel; determines required driver peak current for <100 ns switching transitions. |
| trr | 35 ns - body diode reverse recovery time at IF = 2.5 A; limits minimum off-time and reduces switching loss in synchronous rectifiers. |
Pinout & Package
IRF7101TRPBF uses a standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.27 mm lead pitch, with exposed drain pad for thermal enhancement. Pin numbering follows top-view orientation with pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side power path node; electrically connected to exposed drain pad for thermal conduction. |
| G1 | Gate of Channel 1 | Logic-level control input; requires 0.22 Ω RDS(on) optimization at 4.5 V drive. |
| S1 | Source of Channel 1 | Reference node for Channel 1; isolated from S2 unless externally tied. |
| D2 | Drain of Channel 2 | Independent power path; enables dual-phase or redundant switching without shared drain routing. |
| G2 | Gate of Channel 2 | Second independent logic-level input; allows asynchronous or complementary control. |
| S2 | Source of Channel 2 | Independent reference for Channel 2; supports floating-source configurations like high-side switch with level shifter. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel MOSFETs | Enables space-constrained dual-switch topologies (e.g., dual-output buck, OR-ing, H-bridge half-bridge) without discrete part count increase. |
| Logic-level gate drive (VGS(th) ≤ 2.4 V) | Direct interface with 3.3 V/5 V MCUs and PWM controllers; eliminates need for gate driver ICs in low-power systems. |
| Low QGD/QG ratio (0.32) | Reduces Miller-induced shoot-through risk and improves controllability during hard switching transitions. |
| Specified trr and Qrr | Allows predictable body diode commutation in synchronous rectification; avoids uncontrolled reverse recovery spikes. |
Applications
| DC-DC Synchronous Buck Converter | USB Power Delivery Switch |
|---|---|
Use Scenario: 3.3 V/5 V output stage in portable battery-powered systems with 12 V input. IC Role / Device Role: Dual-channel synchronous rectifier replacing Schottky diodes; Channel 1 as high-side switch, Channel 2 as low-side switch. Use Value: Achieves >92% efficiency at 2 A load by eliminating 0.4 V diode forward drop and leveraging 0.22 Ω RDS(on) at 4.5 V gate drive. | Use Scenario: Input power path control for USB-C PD sink applications requiring overvoltage and reverse-current protection. IC Role / Device Role: Dual N-MOSFET back-to-back configuration for bidirectional blocking and controlled turn-on sequencing. Use Value: Enables <10 µs fault response via gate-controlled conduction; supports 5 V/3 A USB-PD profiles with <50 mΩ total path resistance. |
| Load Switch for FPGA Core Rails | Motor Driver Half-Bridge Stage |
Use Scenario: Sequenced 1.2 V core supply enable for Xilinx Artix-7 FPGA with inrush current limiting. IC Role / Device Role: Channel 1 as main load switch; Channel 2 as gate driver bootstrap switch or auxiliary control path. Use Value: Soft-start achieved via gate resistor control; 0.12 Ω RDS(on) limits voltage drop to <600 mV at 5 A peak inrush. | Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM frequency up to 20 kHz. IC Role / Device Role: High-side and low-side switches in half-bridge topology; independent gate control enables dead-time management. Use Value: Fast 15 ns fall time minimizes shoot-through window; SO-8 thermal design sustains 3.5 A RMS motor current with 2-layer PCB copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.115 Ω @ 10 V but 0.28 Ω @ 4.5 V; higher QG = 12.5 nC; same SO-8 package. | Less suitable for 3.3 V gate drive; better for 5 V–12 V systems where lower 10 V RDS(on) dominates conduction loss. | Select when gate drive voltage ≥ 5 V and priority is lowest possible conduction loss at full drive. |
| DMN3026LSD-13 | Single dual-N in SO-8 but with common-source configuration; RDS(on) = 0.19 Ω @ 4.5 V; lacks independent source terminals. | Not suitable for high-side switch or floating-source use; limited to low-side synchronous rectification only. | Choose only for cost-sensitive low-side-only applications where source isolation is unnecessary. |
Compared with Si7852DP-T1-GE3 and DMN3026LSD-13, IRF7101TRPBF uniquely provides fully independent channel sourcing, superior 4.5 V RDS(on), and verified body diode recovery specs - making it optimal for mixed-voltage, high-density synchronous converter designs.
Availability
IRF7101TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery systems, and FPGA load switching requiring stable component supply and consistent parametric performance across production batches.
Supply support for IRF7101TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with emphasis on energy efficiency and system reliability.
The IRF7101TRPBF belongs to Infineon's OptiMOS™ 30 V/20 V logic-level MOSFET family, designed specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained consumer and industrial power supplies.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF7101TRPBF has a rated maximum junction temperature (TJ) of 150 °C. Derating is required above 25 °C ambient; with 1 in² 2-oz copper on FR-4, the device sustains 4.7 A continuous drain current up to TA = 70 °C before thermal limiting occurs.
Can Channel 1 and Channel 2 be paralleled for higher current handling?
No - the channels are electrically isolated with separate source terminals and no internal bonding between drains or sources. Paralleling would require external source and drain bus bars with matched trace impedances, introducing imbalance risk; the device is not characterized for parallel operation.
Is the SO-8 package lead-free and RoHS compliant?
Yes - the "PBF" suffix confirms lead-free termination, and the device complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60% RH.
Does the body diode support reverse recovery in hard-switched topologies?
Yes - datasheet specifies trr = 35 ns and Qrr = 25 nC at IF = 2.5 A, VR = 20 V, and dI/dt = 100 A/µs. This enables reliable operation in non-resonant synchronous buck converters up to 1 MHz without snubbers.
IRF7101TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 320pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7101TRPBF FAQ
1.How can I place an order for IRF7101TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7101TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7101TRPBF reliable?
The price and inventory of IRF7101TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7101TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7101TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7101TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7101TRPBF?
IRF7101TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7101TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7101TRPBF?
For technical support, including IRF7101TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7101TRPBF requirements.
6.How does Aetrix verify that IRF7101TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7101TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7101TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7101TRPBF?
All IRF7101TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7101TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7101TRPBF part is unused and in its original packaging.
Return procedure for IRF7101TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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