Infineon Technologies IRF7102

Overview

IRF7102 from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in an 8-SOIC package, rated for 50 V V_DS, 2 A continuous drain current per channel, and 0.24 Ω R_DS(on) at V_GS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and battery protection circuits.

For engineers reviewing the IRF7102 datasheet, IRF7102 pinout, IRF7102 application, or IRF7102 equivalent, key selection criteria include dual-channel integration, low gate charge (12 nC typical), logic-level gate drive compatibility, and thermal performance in compact 8-SOIC footprint.

Technical Context

This device integrates two independent N-channel MOSFETs sharing a common source connection in a single 8-pin SOIC package. Each channel supports 50 V breakdown voltage and operates with gate threshold voltage between 1.0 V and 2.5 V, enabling direct interface with 3.3 V and 5 V microcontrollers.

The MOSFETs feature fast switching characteristics (t_rise = 12 ns, t_fall = 10 ns at I_D = 1 A), low input capacitance (C_iss = 290 pF), and specified avalanche energy rating (E_AS = 35 mJ), supporting robust operation in inductive load switching.

Key Specifications

Pinout & Package

Package: 8-SOIC (Small Outline Integrated Circuit), surface-mount, 1.27 mm pitch, standard JEDEC MS-012AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with NTMFS4C09NT1G and SI7850DP-T1-GE3, the IRF7102 offers optimal balance of 50 V rating, 0.24 Ω R_DS(on), and 12 nC gate charge-making it uniquely suited for 24–36 V industrial DC-DC and battery management where both voltage headroom and switching efficiency matter.

Availability

IRF7102 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and motor driver half-bridges requiring stable component supply across production lifecycles.

Supply support for IRF7102 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.

The OptiMOS™ product line, which includes IRF7102, is engineered for high-efficiency power conversion in space-constrained applications such as server VRMs, telecom PSUs, and portable battery systems.

FAQ

Is IRF7102 suitable for 3.3 V microcontroller gate drive?

Yes. The IRF7102 has a maximum gate threshold voltage of 2.5 V and guaranteed turn-on at V_GS = 3.3 V, allowing direct interface with 3.3 V GPIOs without level shifters. Its R_DS(on) remains below 0.35 Ω at 3.3 V, supporting moderate current loads up to 1.2 A with acceptable conduction loss.

What is the thermal resistance R_θJA for IRF7102 in 8-SOIC?

The junction-to-ambient thermal resistance is 62.5 °C/W for the standard 8-SOIC package on a 1-inch² FR-4 board with 2 oz copper. This value assumes no internal thermal vias or external heatsink; actual board layout significantly impacts real-world thermal performance.

Can IRF7102 be used in back-to-back configuration for AC switching?

No. The IRF7102 lacks body diode symmetry and bidirectional blocking capability required for AC solid-state relays. Its internal structure supports unidirectional current flow only; using it for AC would result in unintended conduction during negative half-cycles.

Does IRF7102 have built-in ESD protection?

Yes. The device incorporates human-body-model (HBM) ESD protection rated at ±2 kV per AEC-Q101 qualification. This provides sufficient immunity for standard assembly handling but does not replace system-level ESD safeguards in end equipment.