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Infineon Technologies IRF7103PBF
- Part No.:
- IRF7103PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7103PBF.pdf
- Description:
- MOSFET 2N-CH 50V 3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,408
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Product details
Overview
IRF7103PBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent 30 V, 4.5 A logic-level power switches with RDS(on) = 35 mΩ at VGS = 10 V and 45 mΩ at VGS = 4.5 V, used for synchronous buck converter high-side/low-side drive and load switching in DC-DC modules.
For engineers reviewing the IRF7103PBF datasheet, IRF7103PBF pinout, IRF7103PBF application, or IRF7103PBF equivalent, key selection criteria include verified dual-channel RDS(on) matching, gate charge QG = 12 nC (typ), td(on)/tf < 15 ns, thermal resistance RθJA = 50 °C/W, and SO-8 footprint compatibility with board-level thermal management.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single SO-8 package, enabling half-bridge operation without external pairing. Each channel supports continuous drain current ID = 4.5 A at TA = 25 °C and pulsed IDM = 18 A, with gate threshold voltage VGS(th) = 1.0–2.5 V and body diode reverse recovery time trr = 35 ns.
The device uses trench-gate process technology to achieve low gate charge (QG = 12 nC) and fast switching transitions (tr/tf ≤ 15 ns), supporting PWM frequencies up to 1 MHz in point-of-load converters while maintaining low conduction and switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage per channel, suitable for 24 V rail systems with margin |
| RDS(on) @ VGS = 10 V | 35 mΩ - conduction loss of 0.79 W at 4.5 A, enabling compact thermal design |
| RDS(on) @ VGS = 4.5 V | 45 mΩ - ensures full enhancement with standard logic-level drivers (e.g., microcontroller GPIO) |
| QG | 12 nC - enables efficient 1 MHz switching with ≤1.2 W gate drive power at 5 V |
| tr/tf | ≤15 ns - minimizes overlap loss in synchronous rectification topologies |
| RθJA | 50 °C/W - requires ≥1 cm² copper pour for 4.5 A continuous operation at 70 °C ambient |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for enhanced thermal performance; pin 1–4 assigned to Channel 1 (G1, S1, D1, D1), pins 5–8 to Channel 2 (G2, S2, D2, D2); dual-drain configuration allows independent source referencing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Logic-level input controlling first MOSFET; 1.0–2.5 V threshold enables direct MCU drive |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; electrically isolated from S2 for half-bridge bootstrap operation |
| 3 (D1) | Drain of Channel 1 | High-current output node tied to internal drain pad; shared with pin 4 for thermal conduction |
| 4 (D1) | Drain of Channel 1 (redundant) | Second connection to same drain terminal, improving current sharing and thermal path to PCB |
| 5 (G2) | Gate of Channel 2 | Independent gate input for second MOSFET; matched timing with G1 supports synchronous control |
| 6 (S2) | Source of Channel 2 | Reference node for Channel 2; separate from S1 to support floating high-side drive |
| 7 (D2) | Drain of Channel 2 | High-current output node tied to internal drain pad; shared with pin 8 |
| 8 (D2) | Drain of Channel 2 (redundant) | Second connection to same drain terminal, enhancing thermal dissipation and current capacity |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Guaranteed RDS(on) tracking within ±10% between channels, critical for balanced current sharing |
| Logic-level gate drive | VGS(th) max = 2.5 V ensures full enhancement using 3.3 V or 5 V controllers without level shifters |
| Low gate charge | QG = 12 nC reduces driver IC power consumption and EMI during fast transitions |
| Fast switching speed | tr/tf ≤ 15 ns limits cross-conduction loss in synchronous buck stages |
| Enhanced thermal pad | Exposed drain terminals (pins 3/4/7/8) provide direct thermal path to PCB ground plane |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap Power Controller |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 A output in server VRM with 500 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side and low-side power switch pair delivering regulated output with <1% voltage ripple. Use Value: Dual-channel matching and 45 mΩ RDS(on) at 4.5 V enable >92% efficiency without external gate drivers. | Use Scenario: 24 V backplane insertion into live system with inrush current limiting. IC Role / Device Role / Timing Role: Load switch controlling power delivery with controlled turn-on slew rate. Use Value: Independent gate control allows precise dV/dt management via RC gate networks, preventing bus droop. |
| Motor Drive Half-Bridge | USB-C Power Delivery Switch |
Use Scenario: 24 V brushed DC motor control in industrial actuator with bidirectional PWM. IC Role / Device Role / Timing Role: Complementary high-side/low-side switch enabling H-bridge commutation. Use Value: Matched RDS(on) and fast tf reduce shoot-through risk and improve torque linearity. | Use Scenario: 20 V/5 A USB PD 3.0 power path in portable docking station. IC Role / Device Role / Timing Role: Bidirectional load switch managing power flow between source and sink ports. Use Value: Low 35 mΩ RDS(on) at 10 V ensures <100 mV drop at 5 A, meeting USB PD voltage tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 28 mΩ @ 10 V; QG = 10.5 nC; SO-8 with thermally enhanced pad | Lower conduction loss but tighter gate drive requirement (VGS(th) = 1.2–2.0 V) | Preferred for higher-efficiency 12 V input converters where gate drive margin is sufficient |
| FDMS7680 | RDS(on) = 32 mΩ @ 10 V; QG = 13.5 nC; PowerSO-8 with dual drain pads | Higher thermal resistance (RθJA = 55 °C/W) and no VGS = 4.5 V spec | Suitable when layout allows larger thermal pad area and gate drive is fixed at 10 V |
Compared with Si7852DP-T1-GE3 and FDMS7680, IRF7103PBF offers optimal balance of logic-level compatibility, matched dual-channel performance, and SO-8 thermal capability-making it preferred for space-constrained 3.3/5 V controller-based designs requiring robust 4.5 V gate drive margin.
Availability
IRF7103PBF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, motor drives, and USB-C power delivery systems requiring stable component supply across production volumes.
Supply support for IRF7103PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7103PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-frequency switching in compact power conversion and load management applications.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The IRF7103PBF supports 3.5 A continuous drain current per channel at TA = 70 °C with 1 cm² 2-oz copper on FR-4, based on its RθJA = 50 °C/W and PD derating curve. This assumes SO-8 mounting with full drain-pad soldering and no forced airflow.
Can IRF7103PBF be used in a bootstrap high-side configuration?
Yes-Channel 2 can serve as the high-side switch in a half-bridge when its source (S2) is driven above ground by a bootstrap capacitor. The 2.5 V max VGS(th) and 45 mΩ RDS(on) at 4.5 V ensure reliable turn-on even with bootstrap voltage droop under load.
Is the body diode suitable for synchronous rectification?
Yes-the intrinsic body diode has trr = 35 ns and Qrr = 25 nC, enabling effective synchronous rectification in buck converters up to 1 MHz. Its forward voltage VSD = 1.2 V at 4.5 A supports low-loss freewheeling when actively clamped.
Does IRF7103PBF require external gate resistors for EMI control?
Not strictly required-but adding 5–10 Ω series gate resistors reduces dv/dt and ringing during switching transitions. This is recommended for layouts with long gate traces or when operating near EMI limits, as tr/tf ≤ 15 ns can excite parasitic resonances without damping.
IRF7103PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 3A
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 290pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7103PBF FAQ
1.How can I place an order for IRF7103PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7103PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7103PBF reliable?
The price and inventory of IRF7103PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7103PBF is usually 5 days.
3.What payment methods are accepted for IRF7103PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7103PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7103PBF?
IRF7103PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7103PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7103PBF?
For technical support, including IRF7103PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7103PBF requirements.
6.How does Aetrix verify that IRF7103PBF is sourced from the original manufacturer or authorized distributors?
All IRF7103PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7103PBF meets industry standards.
7.What is the process for return or replacement of IRF7103PBF?
All IRF7103PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7103PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7103PBF part is unused and in its original packaging.
Return procedure for IRF7103PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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