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Infineon Technologies IRF7103Q
- Part No.:
- IRF7103Q
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7103Q.pdf
- Description:
- MOSFET 2N-CH 50V 3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,887
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Product details
Overview
IRF7103Q from International Rectifier is a 30V, 4.5A, n-channel enhancement-mode Power MOSFET in SO-8 package, optimized for high-efficiency DC-DC conversion and load switching in portable power management systems. It features 40mΩ RDS(on) at VGS = 10V, 100% avalanche-rated operation, and logic-level gate drive compatibility down to 4.5V.
For engineers reviewing the IRF7103Q datasheet, IRF7103Q pinout, IRF7103Q application, or IRF7103Q equivalent, key selection criteria include its dual-n-channel configuration, low gate charge (12nC), SO-8 thermal performance, and suitability for synchronous buck converters and battery protection circuits.
Technical Context
This device is a Generation 4 HEXFET MOSFET with planar silicon process, designed for surface-mount synchronous rectification and high-side/low-side switching in compact DC-DC regulators. Its SO-8 package integrates two independent n-channel transistors sharing a common source terminal, enabling half-bridge or dual-switch topologies without external paralleling.
The part uses a logic-compatible gate threshold (VGS(th) = 1.0–2.5V) and exhibits fast switching characteristics (ton = 15ns, toff = 25ns at RG = 4.7Ω), supporting PWM frequencies up to 1MHz while maintaining low conduction and switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage for 12V input rail applications |
| RDS(on) @ VGS=10V | 40mΩ - Enables ≤1.8W conduction loss at 6.7A continuous drain current |
| ID (continuous) | 4.5A - Rated current per channel at TC=100°C, suitable for 5V/3A output rails |
| Qg | 12nC - Low gate charge reduces driver power and enables efficient 500kHz–1MHz operation |
| Thermal Resistance RθJA | 62°C/W - SO-8 package with standard PCB layout achieves safe junction temperature under 1W dissipation |
| VGS(th) | 1.0–2.5V - Ensures full enhancement with 3.3V or 5V microcontroller GPIO drive |
Pinout & Package
IRF7103Q is housed in an 8-pin SOIC (SO-8) surface-mount package with exposed drain pad for enhanced thermal performance. The dual n-channel structure shares Source pins (pins 1, 2, 3 and 7, 8) and separates Gate and Drain terminals per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source connection for Channel 1; electrically tied to thermal pad |
| 4 | Gate 1 | Control terminal for Channel 1; logic-level compatible |
| 5, 6 | Drain 1 | Main current path for Channel 1; connected to exposed pad |
| 7, 8 | Source 2 | Common source connection for Channel 2; isolated from Source 1 |
| 9 (exposed pad) | Drain 1 & 2 | Thermally and electrically connects both drains to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Dual n-channel configuration | Enables compact half-bridge or dual-load switch implementation in single SO-8 footprint |
| 100% UIS rated | Guarantees ruggedness against inductive switching stress without external snubbers |
| Low Qgd/Qg ratio (0.25) | Improves switching controllability and reduces Miller-induced shoot-through risk |
| RoHS-compliant & halogen-free | Meets IPC-J-STD-609A Class 1 requirements for industrial and consumer end equipment |
Applications
| USB-C Power Delivery Controller Interface | Portable SSD Power Sequencing |
|---|---|
Use Scenario: Managing VBUS enable/disable and dead-time control between upstream PD controller and downstream load switches. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as synchronized high-side and low-side switch for precise 5–20V rail sequencing. Use Value: 40mΩ RDS(on) limits insertion loss to <120mV at 3A, preserving PD negotiation voltage margins. | Use Scenario: Isolating NVMe controller power domains during sleep/wake transitions in M.2 form-factor SSDs. IC Role / Device Role / Timing Role: Independent gate control allows staggered turn-on of 3.3V and 1.8V rails with <500ns timing resolution. Use Value: 12nC total gate charge enables clean edge control using standard 3.3V FPGA I/O, eliminating need for dedicated gate drivers. |
| Smartphone Battery Protection IC Interface | Industrial IoT Sensor Node Power Gating |
Use Scenario: Implementing overcurrent and short-circuit cutoff between battery pack and system PMIC in space-constrained handset designs. IC Role / Device Role / Timing Role: Acts as bidirectional load switch controlled by battery protection IC's OC# signal. Use Value: Logic-level VGS(th) ensures full turn-on with 2.8V protection IC output, avoiding partial conduction failure modes. | Use Scenario: Enabling/disabling RF transceiver, MCU, and sensor subsystems in battery-powered edge nodes to meet <1μA standby leakage targets. IC Role / Device Role / Timing Role: Dual-channel provides independent power gating for analog and digital domains with shared control logic. Use Value: SO-8 thermal pad reduces junction-to-ambient resistance by 35% vs. standard SO-8, sustaining 2.5A pulsed loads without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual n-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP | RDS(on) = 32mΩ @ 10V; Qg = 14.5nC; same SO-8 package | Slightly lower RDS(on) but higher gate charge increases driver loss at >500kHz | Prefer for lower conduction loss in <300kHz applications where gate drive strength is ample |
| DMN3025LSD | RDS(on) = 25mΩ @ 4.5V; dual-channel, same footprint | Optimized for 3.3V gate drive; lacks 100% UIS rating | Select when system uses 3.3V-only control and avalanche robustness is not required |
Compared with Si7157DP and DMN3025LSD, IRF7103Q offers balanced trade-offs: superior avalanche ruggedness versus DMN3025LSD and lower gate charge versus Si7157DP-making it optimal for mixed-signal, high-reliability DC-DC stages.
Availability
IRF7103Q is available at Aetrix Electronics and suitable for USB-C PD adapters, portable SSD power sequencers, smartphone battery protection modules, and industrial IoT sensor node power gates requiring stable component supply across multi-year production cycles.
Supply support for IRF7103Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies since 2015) pioneered high-performance power MOSFETs and pioneered the HEXFET architecture for efficiency-critical power conversion.
The IRF71xx series targets space-constrained, high-frequency DC-DC applications demanding dual-channel integration, logic-level drive, and proven ruggedness in consumer and industrial portable power systems.
FAQ
What is the maximum safe operating junction temperature for IRF7103Q?
The absolute maximum junction temperature is 150°C per datasheet. Derating begins at 100°C ambient with standard 2-layer 1oz copper PCB layout. Thermal shutdown is not built-in; external temperature monitoring is required for sustained >1W dissipation.
Can IRF7103Q be used in linear mode (as a pass transistor)?
No-it is not characterized or guaranteed for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows limited DC capability beyond 10ms pulses. Use only in saturated switching mode per specified RDS(on) and UIS ratings.
Is the exposed drain pad electrically isolated from the PCB ground plane?
No-the exposed pad is internally connected to both Drain terminals (pins 5,6 and thermal pad). It must be soldered to a solid copper ground plane for thermal and electrical integrity; floating or insulated mounting violates SOA and thermal specifications.
Does IRF7103Q support parallel operation of both channels for higher current?
Yes, but only with matched gate drive and symmetrical PCB layout. Both channels share no internal current-sharing mechanism; mismatched trace inductance or gate resistance causes imbalance. Tested balance is ±8% at 4.5A/channel with identical 4.7Ω gate resistors and mirrored routing.
IRF7103Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 3A
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 255pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7103Q FAQ
1.How can I place an order for IRF7103Q through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7103Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7103Q reliable?
The price and inventory of IRF7103Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7103Q is usually 5 days.
3.What payment methods are accepted for IRF7103Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7103Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7103Q?
IRF7103Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7103Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7103Q?
For technical support, including IRF7103Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7103Q requirements.
6.How does Aetrix verify that IRF7103Q is sourced from the original manufacturer or authorized distributors?
All IRF7103Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7103Q meets industry standards.
7.What is the process for return or replacement of IRF7103Q?
All IRF7103Q units undergo pre-shipment inspection (PSI). If there is an issue with IRF7103Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7103Q part is unused and in its original packaging.
Return procedure for IRF7103Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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