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Infineon Technologies IRF7103QTRPBF
- Part No.:
- IRF7103QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7103QTRPBF.pdf
- Description:
- MOSFET 2N-CH 50V 3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,944
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Product details
Overview
IRF7103QTRPBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 surface-mount package, rated for 50 V VDS, 130 mΩ RDS(on) at VGS = 10 V / 3.0 A, and 200 mΩ at VGS = 4.5 V / 1.5 A, with 175°C maximum junction temperature and enhanced repetitive avalanche capability. It serves as a compact, thermally efficient synchronous rectifier or half-bridge switch in DC-DC converters and motor drive stages.
For engineers reviewing the IRF7103QTRPBF datasheet, IRF7103QTRPBF pinout, IRF7103QTRPBF application, or IRF7103QTRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V logic-level), dual-die thermal coupling in SO-8, body diode recovery performance (trr = 35–53 ns), and safe operating area under unclamped inductive switching.
Technical Context
This dual N-channel MOSFET integrates two identical silicon dies in a single SO-8 leadframe, sharing common drain connections per channel (D1/D2) and independent gate-source terminals (G1/S1, G2/S2). Its advanced trench process enables ultra-low RDS(on) while maintaining robust 50 V breakdown voltage and 175°C thermal rating.
Designed for high-efficiency power conversion, it supports fast switching (td(on) = 5.1 ns, tf = 2.3 ns) and exhibits controlled reverse recovery (Qrr = 45–67 nC, VSD = 1.2 V) to minimize commutation losses in synchronous buck and H-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 50 V - Withstands up to 50 V drain-source voltage before avalanche onset; suitable for 24 V and 36 V bus systems. |
| RDS(on) @ VGS = 10 V | 130 mΩ - Enables ≤0.39 W conduction loss at 3.0 A continuous drain current in each channel. |
| RDS(on) @ VGS = 4.5 V | 200 mΩ - Fully controllable by standard 3.3 V/5 V logic outputs without gate boosting. |
| trr | 35–53 ns - Fast body diode recovery reduces shoot-through risk and EMI in hard-switched topologies. |
| EAS | 25 mJ - Single-pulse avalanche energy rating allows reliable operation during transient overvoltage events. |
| TJ(max) | 175°C - Supports high ambient temperature environments and sustained high-power pulse operation. |
| Qg | 10–15 nC - Low total gate charge enables efficient driving with low-side gate drivers like IR2110 or TC4427. |
Pinout & Package
Package: Surface-mount SO-8 (dual-channel, exposed drain pad), 5.0 mm × 6.0 mm footprint, 1.75 mm height, RoHS-compliant and lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls turn-on/turn-off of first N-MOSFET; requires 10 V for full enhancement, functional down to 4.5 V. |
| 2 (S2) | Source of Channel 2 | Common source node for second channel; electrically isolated from S1 unless externally tied. |
| 3 (D2) | Drain of Channel 2 | Shared drain terminal with Pin 4; connects to high-side or output node in half-bridge configuration. |
| 4 (D1/D2) | Common Drain Node | Internally bonded drain connection for both channels; used for shared power rail or parallel output routing. |
| 5 (S1) | Source of Channel 1 | Independent source node for first channel; referenced to local ground or bootstrap return path. |
| 6 (G2) | Gate of Channel 2 | Independent gate control for second channel; enables asynchronous or complementary switching. |
| 7 (D1) | Drain of Channel 1 | Shared drain terminal with Pin 4; same potential as D2 under normal operation. |
| 8 (Exposed Pad) | Thermal Drain / Mechanical Ground | Electrically connected to internal drain nodes; must be soldered to PCB copper pour for thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel die in SO-8 | Reduces board area by >40% vs. two discrete SO-8 MOSFETs; eliminates interconnect inductance between channels. |
| 175°C junction rating | Enables operation in sealed enclosures or high-ambient industrial environments without derating below 125°C. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching (IAS = 3.0 A, L = 4.9 mH) without parametric shift. |
| Low Qgd/Qg ratio | 2.8 nC Miller charge out of 10–15 nC total ensures stable switching with minimal gate oscillation at high dv/dt. |
| Body diode VSD = 1.2 V | Lower forward drop than standard silicon diodes improves efficiency in synchronous rectification mode. |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Half-Bridge Driver |
|---|---|
|
Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in networking equipment. IC Role / Device Role: High-side and low-side synchronous switch replacing external Schottky diode and discrete MOSFET pair. Use Value: Reduces conduction loss by 35% vs. diode-based rectification and enables >92% peak efficiency at 3 A load. |
Use Scenario: Bidirectional 24 V brushed motor control in automated valve actuators. IC Role / Device Role: Dual-channel half-bridge output stage with independent gate control for forward/reverse polarity. Use Value: Eliminates need for four discrete MOSFETs and associated gate driver complexity; SO-8 thermal pad sustains 2.5 A RMS per channel. |
| USB-C PD Power Path Switch | LED Driver Current Sink Array |
|
Use Scenario: Input power path management in portable battery-powered devices supporting USB-C PD negotiation. IC Role / Device Role: Dual-channel load switch enabling seamless transition between adapter and battery sources. Use Value: 200 mΩ RDS(on) at 4.5 V gate drive ensures <15 mV dropout at 1.5 A, preserving voltage margin for PD contract compliance. |
Use Scenario: Constant-current dimming of multi-string white LEDs in architectural lighting modules. IC Role / Device Role: Parallel-configured current sink using matched RDS(on) channels for uniform string balancing. Use Value: Matched on-resistance (<±5% unit-to-unit) and thermal coupling ensure ≤3% current mismatch across strings at 70°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 110 mΩ @ 10 V, but only rated to 150°C TJ(max); no specified repetitive avalanche rating. | Lacks validated avalanche robustness for inductive loads; better suited for low-stress DC switching. | Prefer when thermal margin >25°C exists and inductive transients are suppressed externally. |
| DMN3022LSD-13 | 30 V VDS, lower RDS(on) (16 mΩ @ 10 V), but SO-8 package lacks exposed drain pad and has higher Ciss (620 pF). | Not suitable for 48 V systems; higher input capacitance increases gate drive loss in high-frequency (>500 kHz) designs. | Select only for 12–24 V applications where switching frequency exceeds 1 MHz and thermal load is light. |
Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7103QTRPBF uniquely balances 50 V rating, 175°C operation, and documented repetitive avalanche performance-making it the only option qualified for unclamped inductive switching in industrial motor drives.
Availability
IRF7103QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and USB-C power path management requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF7103QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRF7103QTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-density, high-reliability power conversion in space-constrained industrial and computing applications.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The IRF7103QTRPBF supports 2.5 A continuous drain current per channel at TA = 70°C with SO-8 mounted on a 1 in² copper board. This rating assumes no forced airflow and accounts for thermal resistance RθJA = 62.5°C/W and 175°C maximum junction temperature.
Can the two channels be paralleled for higher current handling?
No-channels are not internally paralleled and have separate gate and source terminals. Paralleling requires external gate resistors and careful layout to balance dynamic current sharing; datasheet does not characterize or guarantee matched switching behavior between channels.
Is the exposed pad electrically isolated from the drain terminals?
No-the exposed pad is internally connected to both D1 and D2 drain terminals and must be soldered to a PCB copper pour tied to the system power rail or ground plane depending on circuit topology. It is not a standalone thermal pad.
Does the device meet JEDEC JESD22-A114 qualification for ESD?
Yes-IRF7103QTRPBF is qualified to Human Body Model (HBM) ±2 kV per JESD22-A114, verified during production testing. Gate oxide integrity is maintained under standard handling protocols, but gate protection diodes are not integrated.
IRF7103QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 3A
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 255pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7103QTRPBF FAQ
1.How can I place an order for IRF7103QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7103QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7103QTRPBF reliable?
The price and inventory of IRF7103QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7103QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7103QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7103QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7103QTRPBF?
IRF7103QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7103QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7103QTRPBF?
For technical support, including IRF7103QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7103QTRPBF requirements.
6.How does Aetrix verify that IRF7103QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7103QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7103QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7103QTRPBF?
All IRF7103QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7103QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7103QTRPBF part is unused and in its original packaging.
Return procedure for IRF7103QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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