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Infineon Technologies IRF7103TRPBF
- Part No.:
- IRF7103TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7103TRPBF.pdf
- Description:
- MOSFET 2N-CH 50V 3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,628
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Product details
Overview
IRF7103TRPBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent 0.045 Ω (RDS(on) @ VGS = 10 V) logic-level power switches for high-efficiency DC-DC synchronous buck converters. It supports 30 V VDS, 6.2 A continuous drain current per channel, and operates with gate thresholds down to 1.7 V.
For engineers reviewing the IRF7103TRPBF datasheet, IRF7103TRPBF pinout, IRF7103TRPBF application, or IRF7103TRPBF equivalent, key selection criteria include dual-channel RDS(on) matching, SO-8 thermal performance, gate charge (QG = 19 nC), body diode reverse recovery time (trr = 35 ns), and logic-level drive compatibility with 3.3 V/5 V controllers.
Technical Context
This device integrates two discrete N-channel enhancement-mode MOSFETs on a single die with shared source terminals (S1/S2) and isolated gates (G1/G2) and drains (D1/D2). Its symmetrical layout enables precise current sharing in synchronous rectification stages without external balancing components.
The SO-8 package provides dual-channel isolation while maintaining low thermal resistance (RθJA = 50 °C/W) and supports surface-mount reflow assembly. The device's 1.7 V typical VGS(th) and 19 nC total gate charge enable fast switching at 500 kHz–1 MHz frequencies in compact power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input bus applications. |
| RDS(on) @ VGS = 10 V | 0.045 Ω per channel - Enables ≤1.8 W conduction loss at 6.2 A, critical for thermally constrained PCB layouts. |
| ID (continuous) | 6.2 A per channel - Sustains full-load current in 15–25 W point-of-load regulators without derating. |
| QG | 19 nC - Determines gate driver current requirement (≥1.9 mA avg @ 100 kHz) and switching transition time. |
| trr | 35 ns - Limits reverse recovery energy loss during dead-time transitions in synchronous buck topologies. |
| VGS(th) | 1.7 V (typ) - Ensures full enhancement with 3.3 V microcontroller GPIO or PWM controller outputs. |
Pinout & Package
SO-8 surface-mount package with exposed thermal pad (pin 1–8 numbering per top-view diagram); thermally enhanced for PCB copper pour attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side switch node connection in half-bridge or synchronous buck high-side position. |
| G1 | Gate of Channel 1 | Logic-level control input requiring 1.7–10 V drive; isolated from G2 for independent channel timing. |
| S1 | Source of Channel 1 | Return path for Channel 1; internally tied to S2 for common-source configuration. |
| S2 | Source of Channel 2 | Shared source terminal with S1; enables dual-N topology without external source tie. |
| G2 | Gate of Channel 2 | Independent logic-level control input for low-side or second-phase switching. |
| D2 | Drain of Channel 2 | Low-side switch node or second-phase output; electrically isolated from D1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Eliminates inter-device parameter mismatch in synchronous rectifiers, reducing current imbalance and thermal stress. |
| Low RDS(on) (0.045 Ω) | Reduces conduction losses by >30% vs. discrete 0.065 Ω MOSFETs at 6 A, improving 12 V→3.3 V converter efficiency to ≥92%. |
| Fast body diode (trr = 35 ns) | Minimizes shoot-through risk and EMI during dead-time transitions in high-frequency buck regulators. |
| Logic-level gate drive | Direct interface with 3.3 V FPGA I/O or MCU PWM pins without level-shifting circuitry. |
Applications
| Server VRM | Industrial PLC I/O Module |
|---|---|
Use Scenario: 12 V input, 1.8 V/25 A CPU core supply using multiphase synchronous buck. IC Role / Device Role / Timing Role: High- and low-side switch pair per phase; handles 500 kHz switching with <100 ns dead time. Use Value: Dual-channel matching ensures balanced phase current sharing; 0.045 Ω RDS(on) limits junction temperature rise to <65 °C at full load. | Use Scenario: Isolated 24 V DC-DC converter powering digital I/O circuits in harsh industrial environments. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in flyback topology; driven by UC384x controller. Use Value: 35 ns trr prevents cross-conduction loss during transformer reset; SO-8 thermal pad sustains 85 °C ambient operation. |
| Automotive ADAS Camera Power | Networking Switch ASIC Supply |
Use Scenario: Compact 5 V→1.1 V point-of-load regulator for image signal processor in rear-view camera module. IC Role / Device Role / Timing Role: Dual-N synchronous buck switch; operated at 1 MHz to minimize output filter size. Use Value: 1.7 V VGS(th) guarantees turn-on with automotive-grade 3.3 V LDO output; SO-8 footprint fits <8 mm² board area. | Use Scenario: 48 V→3.3 V intermediate bus converter supplying Ethernet PHY and switch fabric ASICs. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology. Use Value: Matched RDS(on) across channels maintains <2% current imbalance between parallel phases under transient load steps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.038 Ω @ 10 V; QG = 22 nC; SO-8 package. | Lower RDS(on) improves light-load efficiency but increases gate drive demand. | Select when peak efficiency >94% is required and gate driver can supply ≥2.2 mA avg. |
| DMN3025LSD-13 | RDS(on) = 0.032 Ω @ 10 V; dual N-channel with separate sources; no internal S1–S2 tie. | Requires external source tie for common-source use; better for asymmetrical topologies. | Choose when independent source routing is needed for fault-isolation or current sensing. |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7103TRPBF offers optimized gate charge-to-RDS(on) ratio for 500 kHz–1 MHz operation and built-in source tie simplifies synchronous buck layout-reducing component count by one external trace.
Availability
IRF7103TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, automotive ADAS camera power supplies, and networking switch ASIC supplies requiring stable component supply and consistent SO-8 thermal performance.
Supply support for IRF7103TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The StrongIRFET™ family-including IRF7103TRPBF-is engineered for high-current, high-frequency DC-DC conversion in space-constrained computing and industrial power systems.
FAQ
What is the maximum safe operating temperature for IRF7103TRPBF?
The device has a maximum junction temperature of 150 °C. With RθJA = 50 °C/W and 1.8 W total conduction loss (at 6.2 A × 0.045 Ω × 2), it remains within thermal limits up to 60 °C ambient when mounted on 1-in² 2-oz copper with thermal via array. Derating begins above 85 °C ambient.
Can IRF7103TRPBF be used in a single-channel configuration?
Yes-either channel (G1/D1/S1 or G2/D2/S2) may be used independently. The internal S1–S2 tie does not impair single-channel operation; unused gate must be tied to source to prevent floating, and unused drain left open. Thermal performance remains identical to dual-channel use.
Does IRF7103TRPBF require a gate resistor for EMI suppression?
A 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance (Ciss = 620 pF). This reduces dv/dt overshoot and radiated emissions without significantly increasing switching loss (tr/tf remain <20 ns).
Is the body diode suitable for reverse polarity protection?
No-the intrinsic body diode conducts only from source to drain (S→D), making it unsuitable for reverse-voltage blocking. For reverse polarity protection, an external Schottky diode in series with the input or a dedicated protection IC is required; the MOSFET itself must be used in forward-switching mode only.
IRF7103TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 3A
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 290pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7103TRPBF FAQ
1.How can I place an order for IRF7103TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7103TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7103TRPBF reliable?
The price and inventory of IRF7103TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7103TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7103TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7103TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7103TRPBF?
IRF7103TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7103TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7103TRPBF?
For technical support, including IRF7103TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7103TRPBF requirements.
6.How does Aetrix verify that IRF7103TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7103TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7103TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7103TRPBF?
All IRF7103TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7103TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7103TRPBF part is unused and in its original packaging.
Return procedure for IRF7103TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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