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Infineon Technologies IRF7103TRPBFXTMA1
- Part No.:
- IRF7103TRPBFXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7103TRPBFXTMA1.pdf
- Description:
- MOSFET 2N-CH 50V 3A 8DSO-902
- Quantity:
- Payment:
- Shipping:
Inventory:3,034
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Product details
Overview
IRF7103TRPBFXTMA1 from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, rated for 30 V VDS, 4.5 A continuous drain current per channel at TC = 25°C, with RDS(on) ≤ 32 mΩ at VGS = 10 V, used in synchronous buck converters and load switching in DC-DC power stages.
For engineers reviewing the IRF7103TRPBFXTMA1 datasheet, IRF7103TRPBFXTMA1 pinout, IRF7103TRPBFXTMA1 application, or IRF7103TRPBFXTMA1 equivalent, key selection criteria include dual-channel RDS(on) matching, gate charge (QG = 12 nC), thermal resistance (RθJA = 50°C/W), and SO-8 footprint compatibility with high-side/low-side drive topologies.
Technical Context
This dual N-channel MOSFET integrates two matched enhancement-mode silicon devices in a single SO-8 package, enabling compact half-bridge configurations without external isolation. Each channel supports independent gate control, with specified VGS(th) of 1.0–2.5 V and guaranteed avalanche energy rating (EAS = 39 mJ).
The device features low gate charge (QGS = 3.2 nC, QG(D) = 5.8 nC) and fast switching transitions (td(on) = 12 ns, tf = 15 ns), optimized for 300–1000 kHz DC-DC operation where conduction and switching losses must be jointly minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage per channel; defines upper limit for input rail in buck or OR-ing applications. |
| RDS(on) @ VGS = 10 V | ≤32 mΩ - Conduction loss per channel at full gate drive; determines I²R heating under 4.5 A DC load. |
| ID (continuous, TC = 25°C) | 4.5 A per channel - Safe steady-state current handling before thermal derating begins. |
| QG | 12 nC - Total gate charge; sets minimum driver strength requirement for <100 ns switching transitions. |
| tf | 15 ns - Fall time with 10 Ω gate resistor; constrains achievable switching frequency and EMI profile. |
| RθJA | 50°C/W - Junction-to-ambient thermal resistance in standard SO-8 PCB layout; informs heatsinking need at >2 W dissipation. |
Pinout & Package
SO-8 surface-mount package with exposed thermal pad (pin 8 connected to source of Channel 1); 5.0 × 6.0 mm body, 1.75 mm max height, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls turn-on/off of first N-MOSFET; requires ≥10 V for RDS(on) spec compliance. |
| 2 (S1) | Source of Channel 1 | Reference node for G1; tied to power ground in low-side switch configuration. |
| 3 (D1) | Drain of Channel 1 | High-current output node; connects to input rail in high-side or to inductor node in synchronous rectifier. |
| 4 (G2) | Gate of Channel 2 | Independent control input for second channel; enables phase-shifted or complementary drive. |
| 5 (S2) | Source of Channel 2 | Reference node for G2; electrically isolated from S1 unless externally shorted (e.g., common-source topology). |
| 6 (D2) | Drain of Channel 2 | Second high-current output; used for low-side switch in half-bridge or parallel conduction path. |
| 7 (S1/S2) | Common Source Terminal | Internally bonded source pins; provides shared return path but retains channel independence. |
| 8 (Thermal Pad) | Exposed Drain / Thermal Sink | Electrically connected to D1 and D2; must be soldered to PCB copper pour for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Guaranteed RDS(on) tracking within ±10% ensures balanced current sharing in paralleled or half-bridge use. |
| Low gate charge (QG = 12 nC) | Reduces driver IC power consumption and allows use of cost-effective 1-A peak gate drivers in 500 kHz designs. |
| Fast switching (tf = 15 ns) | Enables high-frequency operation while maintaining <5% duty-cycle loss in PWM-controlled power stages. |
| Enhanced avalanche ruggedness (EAS = 39 mJ) | Supports unclamped inductive switching in motor gate drivers or flyback snubberless topologies without external protection. |
| SO-8 with thermal pad | Delivers 2× the power density of standard SO-8 by lowering RθJA from 62°C/W to 50°C/W with minimal PCB redesign. |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap OR-ing Circuit |
|---|---|
Use Scenario: Step-down conversion from 12 V to 3.3 V/5 V in telecom power modules with >92% efficiency target. IC Role / Device Role: High-side and low-side power switches replacing discrete MOSFET pairs; driven by integrated controller's complementary outputs. Use Value: Dual-channel matching reduces gate drive asymmetry, minimizing shoot-through risk and improving light-load efficiency by 1.2% over discrete solutions. | Use Scenario: Redundant 12 V supply inputs in network line cards requiring automatic failover without reverse current. IC Role / Device Role: Back-to-back configured N-MOSFETs acting as ideal diodes controlled by external sense amplifier and comparator. Use Value: 32 mΩ RDS(on) cuts forward drop to 144 mV at 4.5 A, reducing heat generation by 78% versus Schottky diode-based OR-ing. |
| Motor Gate Driver Half-Bridge | USB-C Power Delivery Load Switch |
Use Scenario: 24 V BLDC motor control stage in industrial actuators requiring 5 A peak phase current. IC Role / Device Role: Low-side switch in three-phase inverter leg; paired with external high-side driver and bootstrap circuit. Use Value: Fast tf (15 ns) and low QG enable clean 20 kHz PWM edge integrity, suppressing audible motor whine and reducing EMI filter size. | Use Scenario: Input protection and inrush limiting for 20 V/3 A USB PD 3.0 sink ports in portable docking stations. IC Role / Device Role: Single-channel used as controlled high-side switch; second channel unused or paralleled for higher current. Use Value: VGS(th) range (1.0–2.5 V) ensures reliable turn-on with 3.3 V logic-level gate drivers, eliminating level-shifter components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 28 mΩ (lower), QG = 14.5 nC (higher), SO-8 with thermal pad | Better conduction loss but slower switching; suited for <300 kHz, high-current DC loads | Prefer when thermal margin is tight but switching frequency is low. |
| DMN3028LSD-13 | RDS(on) = 30 mΩ, QG = 10.5 nC, same SO-8 footprint, no exposed pad | Lower gate charge improves driver efficiency but lacks thermal pad; RθJA = 62°C/W | Choose when PCB layout cannot accommodate thermal pad soldering. |
Compared with IRF7103TRPBFXTMA1, Si7852DP-T1-GE3 trades faster switching for lower conduction loss, while DMN3028LSD-13 sacrifices thermal performance for reduced gate drive demand-selection depends on whether board-level cooling or driver IC capability is the system bottleneck.
Availability
IRF7103TRPBFXTMA1 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, motor gate drivers, and USB-C power delivery systems requiring stable component supply and long-term production continuity.
Supply support for IRF7103TRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The OptiMOS™ family, to which IRF7103TRPBFXTMA1 belongs, is engineered for high-efficiency, high-frequency power conversion in server, telecom, and industrial SMPS applications-emphasizing low RDS(on), fast switching, and robust avalanche performance.
FAQ
What is the maximum safe operating junction temperature for IRF7103TRPBFXTMA1?
The absolute maximum junction temperature is 150°C. Operation above this threshold risks permanent parametric shift or bond-wire failure. Derating begins at TA = 25°C using RθJA = 50°C/W; at 70°C ambient, maximum continuous power dissipation drops to 1.6 W per channel before exceeding 150°C.
Can IRF7103TRPBFXTMA1 be used in linear mode (as a pass transistor)?
No. This device is not characterized or qualified for linear (ohmic) operation. Its Safe Operating Area (SOA) curve is limited to pulsed conditions only; sustained linear bias causes localized thermal runaway due to positive temperature coefficient of RDS(on) and insufficient lateral heat spreading in SO-8.
Is the thermal pad (Pin 8) electrically isolated or tied to a specific terminal?
The exposed thermal pad is internally connected to both drains (D1 and D2). It must be soldered to a PCB copper pour tied to the drain net-not to ground or source-to avoid short circuits. No internal isolation exists between pad and drain terminals.
Does IRF7103TRPBFXTMA1 support gate drive voltages below 5 V?
Yes, but with significant RDS(on) penalty: at VGS = 4.5 V, RDS(on) rises to ≤52 mΩ (vs. 32 mΩ at 10 V), increasing conduction loss by ~60%. Logic-level operation is feasible only in low-duty-cycle or thermally relaxed applications.
IRF7103TRPBFXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 290pF @ 25V
- Power - Max:
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8-902
IRF7103TRPBFXTMA1 FAQ
1.How can I place an order for IRF7103TRPBFXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7103TRPBFXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7103TRPBFXTMA1 reliable?
The price and inventory of IRF7103TRPBFXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7103TRPBFXTMA1 is usually 5 days.
3.What payment methods are accepted for IRF7103TRPBFXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7103TRPBFXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7103TRPBFXTMA1?
IRF7103TRPBFXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7103TRPBFXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7103TRPBFXTMA1?
For technical support, including IRF7103TRPBFXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7103TRPBFXTMA1 requirements.
6.How does Aetrix verify that IRF7103TRPBFXTMA1 is sourced from the original manufacturer or authorized distributors?
All IRF7103TRPBFXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7103TRPBFXTMA1 meets industry standards.
7.What is the process for return or replacement of IRF7103TRPBFXTMA1?
All IRF7103TRPBFXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7103TRPBFXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7103TRPBFXTMA1 part is unused and in its original packaging.
Return procedure for IRF7103TRPBFXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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