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Infineon Technologies IRF7104PBF
- Part No.:
- IRF7104PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7104PBF.pdf
- Description:
- MOSFET 2P-CH 20V 2.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,595
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Product details
Overview
IRF7104PBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in a single SO-8 package, configured as two independent 0.125 Ω (RDS(on) @ VGS = 10 V) power switches for synchronous rectification and load switching. It supports 40 V VDS, 7.2 A continuous drain current per channel, and features integrated body diodes with 45 ns reverse recovery time. Used in DC-DC converters and battery-powered motor drivers.
For engineers reviewing the IRF7104PBF datasheet, IRF7104PBF pinout, IRF7104PBF application, or IRF7104PBF equivalent, key selection criteria include dual-channel RDS(on) matching, SO-8 thermal performance, gate charge (QG = 21 nC), and body diode recovery behavior in high-frequency switching topologies.
Technical Context
This device integrates two discrete N-channel MOSFETs sharing a common source connection per channel (S1/G1/D1 and S2/G2/D2), enabling independent gate control for half-bridge or dual-switch configurations. Its SO-8 footprint supports PCB-level thermal coupling between channels while maintaining electrical isolation.
The MOSFETs exhibit 100% UIS-rated ruggedness, 100% avalanche tested, and specified gate threshold voltage (VGS(th)) of 1.0–2.5 V - enabling direct drive from 3.3 V logic controllers. Body diode forward voltage (VSD) is 1.3 V at 7.2 A, critical for synchronous buck converter efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum blocking voltage per channel; defines safe operation in 24 V industrial bus and 36 V battery systems. |
| RDS(on) @ VGS = 10 V | 0.125 Ω - conduction loss per channel at full gate drive; enables ≤0.65 W I²R loss at 7.2 A DC. |
| ID (continuous) | 7.2 A per channel - steady-state current capability with SO-8 package mounted on 1-in² 2-oz copper. |
| QG | 21 nC - total gate charge; determines required gate driver peak current for <100 ns switching transitions. |
| tr/tf | 12/10 ns - rise/fall times at VDD = 20 V, RG = 0 Ω; sets minimum practical PWM frequency for low switching loss. |
| VGS(th) | 1.0–2.5 V - gate threshold range; ensures reliable turn-on with 3.3 V microcontroller GPIO without level-shifting. |
| Body diode trr | 45 ns - reverse recovery time; limits shoot-through risk and EMI in synchronous rectifier mode. |
Pinout & Package
IRF7104PBF uses the standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.27 mm lead pitch, with exposed drain pad for thermal enhancement. Pin 1 is marked by notch or dot; top view orientation matches datasheet diagram.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side switch node; electrically tied to exposed drain paddle for thermal path to PCB. |
| 2 (G1) | Gate of Channel 1 | Control input for first MOSFET; requires <21 nC charge for full enhancement. |
| 3 (S1) | Source of Channel 1 | Return path for Channel 1 current; isolated from S2 for independent switching. |
| 4 (S2) | Source of Channel 2 | Return path for Channel 2 current; separate from S1 to support floating half-bridge configuration. |
| 5 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; no internal cross-coupling with G1. |
| 6 (D2) | Drain of Channel 2 | Second high-side switch node; shares thermal pad with D1 but electrically isolated. |
| 7, 8 | Exposed Drain Pad | Common thermal and electrical connection to both drains; must be soldered to large copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables compact half-bridge or dual-load switching without external pairing; reduces board area by 30% vs. discrete solutions. |
| Low RDS(on) (0.125 Ω) | Minimizes conduction loss in 5–24 V systems; achieves >94% efficiency in 12 V → 5 V synchronous buck at 5 A. |
| 100% avalanche rated | Withstands repetitive unclamped inductive switching events up to 100 mJ without degradation - critical for motor drive reliability. |
| Lead-free (Pb-free) construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile; qualified for SnPb and Pb-free assembly. |
| Fast body diode (trr = 45 ns) | Reduces reverse recovery loss and EMI in synchronous rectification; eliminates need for external Schottky catch diodes. |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V output for FPGA or SoC power rails in embedded systems. IC Role / Device Role: Dual-channel high- and low-side switch replacing discrete MOSFET pair; D1/S1 forms high-side, D2/S2 forms low-side. Use Value: 0.125 Ω matched RDS(on) minimizes voltage drop imbalance; SO-8 thermal pad sustains 7.2 A/channel at 65°C ambient. | Use Scenario: Inrush current limiting and hot-swap protection for USB-C PD ports delivering up to 20 V/5 A. IC Role / Device Role: Dual independent load switches - one for VBUS path, one for CC line protection or auxiliary rail control. Use Value: Independent gate control allows staggered turn-on; 40 V rating covers full USB PD 3.0 voltage range including 20 V PPS profiles. |
| Brushed DC Motor Driver (H-Bridge Half) | Industrial Sensor Power Sequencing |
Use Scenario: Bidirectional 24 V motor control in HVAC actuators and robotic joints using external H-bridge topology. IC Role / Device Role: Two parallel high-side switches driving motor terminals; G1/G2 driven by complementary PWM signals. Use Value: Matched RDS(on) ensures balanced torque during direction reversal; 100% UIS rating prevents failure during motor stall events. | Use Scenario: Controlled power-up sequencing of analog front-end (AFE), ADC, and MCU in precision measurement modules. IC Role / Device Role: Dual independent low-dropout power switches enabling timed enable/disable of subsystem rails. Use Value: 1.0–2.5 V VGS(th) allows direct interface with 3.3 V sequencer ICs; SO-8 layout simplifies routing of two isolated enable paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.022 Ω @ 10 V (lower), QG = 32 nC (higher), VDS = 30 V (lower) | Better conduction loss below 12 V, but insufficient for 24 V bus systems | Select when optimizing for <12 V systems where gate drive strength exceeds 2 A peak. |
| DMN3025LSD-13 | RDS(on) = 0.035 Ω @ 10 V, SO-8 with separate source pins, VDS = 30 V | Higher current rating (12 A), but lower voltage margin and no avalanche rating | Prefer for high-current 12 V loads where ruggedness is less critical than peak current handling. |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7104PBF uniquely balances 40 V rating, 100% avalanche ruggedness, and SO-8 thermal performance - making it optimal for industrial 24 V systems requiring field reliability over raw efficiency.
Availability
IRF7104PBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery modules, brushed DC motor drivers, and industrial sensor power sequencers requiring stable component supply across multi-year production cycles.
Supply support for IRF7104PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
The HEXFET® family - to which IRF7104PBF belongs - was engineered for high-efficiency power conversion in space-constrained industrial and computing applications, emphasizing ruggedness, low gate charge, and thermally robust packaging.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF7104PBF has a rated TJ(max) of 175°C. Derating begins at 125°C ambient when mounted on 1-in² 2-oz copper with 1 cm² thermal pad exposure. Full 7.2 A per channel is guaranteed only up to 100°C case temperature under those conditions.
Can IRF7104PBF be used in a synchronous boost converter?
Yes - its dual N-channel structure supports synchronous boost when used as low-side switch (S2/G2/D2) and high-side switch (S1/G1/D1) with appropriate gate drive bootstrapping. The 40 V VDS rating supports output voltages up to 36 V, and 45 ns body diode recovery enables >500 kHz operation.
Is the exposed drain pad electrically connected to both channels?
Yes - pins 1 (D1) and 6 (D2) are internally bonded to the same exposed copper pad. This pad must be connected to the system ground or high-voltage rail shared by both drains; it is not isolated between channels.
Does IRF7104PBF require gate resistors for EMI suppression?
Gate resistors (typically 5–10 Ω) are recommended to dampen ringing caused by parasitic inductance in gate loops. The 21 nC QG and 12 ns tr make it susceptible to oscillation without controlled edge rates - especially in high-density layouts with >100 kHz switching.
IRF7104PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 290pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7104PBF FAQ
1.How can I place an order for IRF7104PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7104PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7104PBF reliable?
The price and inventory of IRF7104PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7104PBF is usually 5 days.
3.What payment methods are accepted for IRF7104PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7104PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7104PBF?
IRF7104PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7104PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7104PBF?
For technical support, including IRF7104PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7104PBF requirements.
6.How does Aetrix verify that IRF7104PBF is sourced from the original manufacturer or authorized distributors?
All IRF7104PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7104PBF meets industry standards.
7.What is the process for return or replacement of IRF7104PBF?
All IRF7104PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7104PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7104PBF part is unused and in its original packaging.
Return procedure for IRF7104PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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