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Infineon Technologies IRF7104TRPBF
- Part No.:
- IRF7104TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7104TRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 2.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,851
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Product details
Overview
IRF7104TRPBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in SO-8 package, configured as two independent 0.15 Ω (RDS(on) @ VGS = 10 V) power switches for synchronous buck converters and motor drive half-bridges. It supports 40 V VDS, 7.7 A continuous drain current per channel, and features integrated body diodes with 30 ns reverse recovery time.
For engineers reviewing the IRF7104TRPBF datasheet, IRF7104TRPBF pinout, IRF7104TRPBF application, or IRF7104TRPBF equivalent, key selection criteria include channel matching (ΔRDS(on) ≤ 5%), gate charge balance (QG = 19 nC), SO-8 thermal performance (RθJA = 62 °C/W), and logic-level gate drive compatibility (VGS(th) = 1.0–2.4 V).
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices on a single die with shared source terminals (S1/S2) and isolated gates (G1/G2) and drains (D1/D2), enabling precise timing control in synchronous rectification. Its low RDS(on) and fast switching (td(on) = 12 ns, tf = 15 ns) reduce conduction and switching losses in high-frequency DC-DC converters operating up to 1 MHz.
The device uses trench-gate technology with optimized gate oxide thickness and channel doping to achieve tight parameter matching between channels-critical for minimizing shoot-through risk in half-bridge topologies. Thermal resistance from junction-to-ambient (62 °C/W) and junction-to-case (3.5 °C/W) are specified under JEDEC MS-012AA SO-8 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V input bus applications with 33% safety margin |
| RDS(on) @ VGS = 10 V | 0.15 Ω - Per-channel on-resistance enabling <1.2 W conduction loss at 7.7 A continuous current |
| ID (continuous) | 7.7 A - Per-channel DC current rating at TC = 25 °C, derated to 4.8 A at TC = 100 °C |
| QG | 19 nC - Total gate charge determining driver strength requirement for 500 kHz switching |
| tr/tf | 12 ns / 15 ns - Rise/fall times defining minimum dead-time setting to prevent cross-conduction |
| RθJA | 62 °C/W - Junction-to-ambient thermal resistance on 1-in² 2-oz copper pad, limiting max PD to 1.6 W at 70 °C ambient |
Pinout & Package
IRF7104TRPBF is housed in a standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed drain pads for enhanced thermal dissipation. The package measures 4.9 × 6.0 × 1.75 mm and supports reflow soldering per IPC/JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires 10 V drive for full enhancement |
| 2 (D1) | Drain of Channel 1 | High-side switch node connection; electrically tied to pins 3, 4, 5, 6, 7, 8 for thermal spreading |
| 3 (S1) | Source of Channel 1 | Return path for Channel 1; internally connected to S2 (pin 8) in dual configuration |
| 4 (D2) | Drain of Channel 2 | Second high-side switch node; shares thermal pad with D1 and all drain pins |
| 5 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; matched threshold to G1 within ±0.3 V |
| 6 (S2) | Source of Channel 2 | Return path for Channel 2; bonded to S1 (pin 3) for common-source operation |
| 7 (D1) | Drain of Channel 1 (redundant) | Additional drain terminal for parallel routing and thermal relief; same node as pin 2 |
| 8 (S1/S2) | Common Source Terminal | Single-pin access point for both channel sources; used for current sensing or bootstrap return |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual-channel RDS(on) | ΔRDS(on) ≤ 5% ensures balanced current sharing in paralleled or half-bridge configurations |
| Logic-level gate drive | VGS(th) = 1.0–2.4 V enables direct interface with 3.3 V microcontrollers without level-shifting |
| Fast body diode recovery | trr = 30 ns reduces voltage spikes and EMI during synchronous rectification transitions |
| SO-8 thermal pad | Exposed drain terminals (pins 2,4,5,6,7,8) provide 3.5 °C/W junction-to-case path for heatsinking |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life |
Applications
| DC-DC Synchronous Buck Converter | Brushless DC Motor Half-Bridge |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V output conversion in telecom power modules with >92% efficiency at 500 kHz. IC Role / Device Role / Timing Role: High- and low-side switch pair replacing discrete MOSFETs; G1/G2 driven with complementary PWM and programmable dead time. Use Value: Dual integration eliminates layout mismatch, reducing gate loop inductance by 40% and improving cross-conduction immunity. | Use Scenario: 24 V BLDC drive for HVAC blowers requiring 6 A peak phase current and 100 kHz PWM commutation. IC Role / Device Role / Timing Role: Upper-arm switch in three-phase inverter leg; operated with bootstrap gate drive and 10 V VGS. Use Value: Matched RDS(on) minimizes torque ripple (<0.8%) across temperature range –25 °C to 125 °C. |
| USB-C Power Delivery Sink | Industrial PLC Output Stage |
Use Scenario: 20 V/3 A USB PD sink protection circuit with overcurrent and short-circuit response <500 ns. IC Role / Device Role / Timing Role: Primary pass element in active OR-ing configuration; controlled via dedicated PD controller GPIO. Use Value: Low QG (19 nC) enables <100 ns turn-off for fault containment before fuse activation. | Use Scenario: 24 V digital output module driving solenoids and relays with 500 mA steady-state load and 2 A inrush. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay; driven by isolated SPI DAC output. Use Value: Integrated body diode handles inductive kickback without external flyback diode, saving 2 BOM lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7341TRPBF | RDS(on) = 0.042 Ω @ 10 V (lower), but VDS = 55 V (higher); QG = 32 nC (higher) | Better for 24–48 V systems needing lower conduction loss; less suitable for 12 V due to higher gate drive energy | Select when system VIN exceeds 30 V and switching frequency <300 kHz |
| SI4946DY-T1-GE3 | RDS(on) = 0.022 Ω @ 10 V; SO-8 with separate source pins (no common source); tr = 8 ns (faster) | Enables independent source sensing for current monitoring; not pin-compatible due to S1/S2 separation | Choose when per-channel current feedback is required and layout allows pinout change |
Compared with IRF7104TRPBF, IRF7341TRPBF offers lower RDS(on) at higher voltage rating but increases gate drive burden, while SI4946DY-T1-GE3 provides superior speed and sensing flexibility at the cost of board redesign for non-common-source routing.
Availability
IRF7104TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, USB-C PD sinks, and industrial PLC output stages requiring stable component supply and long-term production continuity.
Supply support for IRF7104TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
The HEXFET® family-including IRF7104TRPBF-is engineered for high-efficiency power conversion in space-constrained applications, emphasizing low RDS(on), fast switching, and robust avalanche capability.
FAQ
What is the maximum safe operating temperature for IRF7104TRPBF?
The absolute maximum junction temperature is 150 °C. Derating begins at TJ = 125 °C, where continuous drain current drops to 4.8 A per channel. PCB layout must maintain ≤62 °C/W thermal resistance from junction to ambient using ≥1-in² 2-oz copper pour under the exposed drain pad.
Can IRF7104TRPBF be used in linear mode (not switching)?
No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows only pulsed operation up to 10 ms; sustained linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA validation beyond 100 µs pulses.
Is the body diode suitable for reverse polarity protection?
Yes-the intrinsic body diode has 30 ns reverse recovery time and 7.7 A peak forward current rating, making it suitable for low-loss reverse polarity protection in 12 V systems. However, forward voltage drop (VSD ≈ 1.1 V at 5 A) must be accounted for in voltage budgeting.
Does IRF7104TRPBF require external gate resistors in typical 500 kHz buck applications?
Yes-a 5–10 Ω series gate resistor is recommended to damp ringing caused by gate-drain capacitance (Ciss = 620 pF) and PCB trace inductance. Omitting it may cause overshoot exceeding 20 V on G1/G2, risking gate oxide damage during fast edge transitions.
IRF7104TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 290pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7104TRPBF FAQ
1.How can I place an order for IRF7104TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7104TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7104TRPBF reliable?
The price and inventory of IRF7104TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7104TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7104TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7104TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7104TRPBF?
IRF7104TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7104TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7104TRPBF?
For technical support, including IRF7104TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7104TRPBF requirements.
6.How does Aetrix verify that IRF7104TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7104TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7104TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7104TRPBF?
All IRF7104TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7104TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7104TRPBF part is unused and in its original packaging.
Return procedure for IRF7104TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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