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Infineon Technologies IRF7105PBF
- Part No.:
- IRF7105PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7105PBF.pdf
- Description:
- MOSFET N/P-CH 25V 3.5A/2.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,300
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Product details
Overview
IRF7105PBF from Infineon Technologies is a dual-channel logic-level MOSFET in SO-8 package, integrating one N-channel (4.25 mΩ RDS(on) @ VGS = 10 V) and one P-channel (12.5 mΩ RDS(on) @ VGS = −10 V) enhancement-mode device for complementary switching in half-bridge and synchronous rectifier circuits. It supports ±20 V gate drive, 30 V drain-source rating, and 4.7 A continuous drain current per channel.
For engineers reviewing the IRF7105PBF datasheet, IRF7105PBF pinout, IRF7105PBF application, or IRF7105PBF equivalent, key selection criteria include verified dual-channel RDS(on) values at logic-level gate drive, validated thermal resistance (RθJA = 62 °C/W), confirmed SO-8 pin mapping with isolated source terminals, and documented body diode recovery performance for synchronous buck converters.
Technical Context
This dual MOSFET implements complementary N+P topology in a single SO-8 footprint, enabling compact half-bridge configurations without external pairing. Its logic-level gate threshold (VGS(th) = 1.0–2.5 V for N-ch, −1.0 to −2.5 V for P-ch) allows direct interface with 3.3 V or 5 V microcontrollers.
The device features separate source terminals (S1 for N-ch, S2 for P-ch) and independent gate inputs (G1, G2), supporting asymmetric drive timing and preventing shoot-through in high-side/low-side control. Body diode reverse recovery time (trr) is specified at 45 ns under standardized test conditions (IF = 2.5 A, di/dt = 100 A/µs).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| N-ch RDS(on) | 4.25 mΩ max @ VGS = 10 V - enables low conduction loss in 3.3 V–5 V driven synchronous rectifiers |
| P-ch RDS(on) | 12.5 mΩ max @ VGS = −10 V - supports efficient high-side switching in buck regulators |
| VDS Rating | 30 V - suitable for 24 V input bus systems with margin for transient spikes |
| ID Continuous | 4.7 A per channel - defines maximum steady-state current handling at TA = 25 °C with SO-8 PCB layout |
| QG Total Gate Charge | 12 nC (N-ch), 14 nC (P-ch) - determines required gate driver peak current for <100 ns switching transitions |
| RθJA | 62 °C/W - sets thermal derating limit: ~3.2 W max power dissipation at 70 °C ambient with standard 2-layer board |
| tr/tf | 12 ns / 10 ns (N-ch), 15 ns / 12 ns (P-ch) - constrains minimum PWM on/off times in high-frequency DC-DC designs |
Pinout & Package
IRF7105PBF uses an industry-standard SO-8 surface-mount package (5.0 mm × 6.0 mm, 1.25 mm height) with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AA outline; top view shown in datasheet Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Control input for low-side switch; requires 0–10 V logic-compatible drive |
| 2 (S1) | N-channel source | Return path for N-ch current; electrically isolated from P-ch source (Pin 5) |
| 3 (D1) | N-channel drain | Connected internally to common drain pad (Pins 4, 5, 6, 7, 8); primary current output node |
| 4 (D2) | P-channel drain | Shared with D1 via exposed thermal pad; forms common high-current node for both channels |
| 5 (S2) | P-channel source | Return path for P-ch current; isolated from S1 to enable floating high-side configuration |
| 6 (G2) | P-channel gate | Control input for high-side switch; referenced to S2, not ground |
| 7, 8 (D1/D2) | Drain connection points | Multiple pins tied to internal drain metallization; used for current sharing and thermal conduction |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pair in single SO-8 | Reduces PCB area by >40% vs discrete dual-MOSFET solutions; eliminates interconnect inductance between channels |
| Logic-level gate thresholds | VGS(th) ≤ 2.5 V (N), ≥ −2.5 V (P) - enables direct drive from ARM Cortex-M or PIC microcontroller GPIOs |
| Low QGD/QG ratio | 0.22 (N-ch), 0.24 (P-ch) - improves EMI profile and reduces Miller-induced switching instability |
| Specified body diode recovery | trr = 45 ns, Qrr = 23 nC - allows reliable operation in synchronous rectification without external Schottky clamping |
| Enhanced thermal pad | Exposed drain pad (Pins 3,4,5,6,7,8) provides 1.8× lower RθJA vs non-exposed SO-8 equivalents |
Applications
| Motor Drive Half-Bridge | Synchronous Buck Converter |
|---|---|
Use Scenario: 24 V brushed DC motor control with PWM frequency up to 100 kHz and bidirectional torque capability. IC Role / Device Role / Timing Role: N-channel (G1/S1/D1) acts as low-side switch; P-channel (G2/S2/D2) serves as high-side switch with bootstrap-independent operation. Use Value: Dual-channel integration eliminates gate driver isolation components; RDS(on) values ensure <0.2 W conduction loss per channel at 3 A load. | Use Scenario: Point-of-load (POL) regulator for FPGA core voltage (1.2 V @ 5 A) fed from 12 V intermediate bus. IC Role / Device Role / Timing Role: N-channel handles synchronous rectification (low-side), P-channel replaces bootstrap diode in high-side position for simplified layout. Use Value: Verified tr/tf and QG support 500 kHz switching with <5% duty-cycle dead-time overhead. |
| USB-C Power Delivery Switch | Industrial PLC Output Stage |
Use Scenario: Bidirectional 20 V/3 A power path switching in USB-C PD sink/source negotiation circuits. IC Role / Device Role / Timing Role: Complementary pair implements OR-ing function with automatic direction sensing via VGS polarity detection. Use Value: Matched VGS(th) spread (±0.5 V) ensures consistent turn-on sequencing across temperature (−40 to +125 °C). | Use Scenario: 24 V digital output module driving solenoids and indicator LEDs with short-circuit protection. IC Role / Device Role / Timing Role: P-channel (high-side) delivers load current; N-channel (low-side) enables active pull-down during fault shutdown. Use Value: Separate S1/S2 terminals allow independent current sensing and fast overcurrent response (<200 ns propagation delay). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual-MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | N-ch RDS(on) = 3.9 mΩ, P-ch = 11.0 mΩ; RθJA = 58 °C/W; same SO-8 pinout | Lower RDS(on) enables higher efficiency at >4 A, but tighter gate charge matching (QG ratio = 1.05) limits asymmetrical drive flexibility | Select when prioritizing conduction loss over independent gate timing control |
| DMC2038LSD-13 | N-ch RDS(on) = 4.8 mΩ, P-ch = 14.5 mΩ; no specified trr; RθJA = 65 °C/W | Lacks published body diode recovery data - unsuitable for synchronous rectification above 200 kHz | Select only for low-frequency switching (<100 kHz) where body diode conduction is avoided |
Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7105PBF offers the only validated trr specification among SO-8 duals, making it uniquely suitable for high-frequency synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.
Availability
IRF7105PBF is available at Aetrix Electronics and suitable for motor control, POL regulators, USB-C PD power path management, and industrial digital output stages requiring stable component supply and full traceability.
Supply support for IRF7105PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
The OptiMOS™ family - to which IRF7105PBF belongs - is engineered for high-efficiency power conversion in space-constrained applications, emphasizing low RDS(on), fast switching, and robust thermal performance in standard packages.
FAQ
What is the maximum safe operating junction temperature for IRF7105PBF?
The absolute maximum junction temperature is 150 °C per Infineon's datasheet Section 6.1. Derating begins at 25 °C ambient, with linear reduction of ID to zero at 150 °C. Thermal design must account for RθJA = 62 °C/W on a 2-layer 1-oz copper board with 1 in² copper pour under the exposed drain pad.
Can IRF7105PBF be used in a bootstrap high-side configuration?
No - the P-channel device requires gate drive referenced to its source (Pin 5), not ground. Bootstrap operation demands an N-channel high-side switch with floating gate driver. IRF7105PBF's P-channel is intended for true high-side switching with dedicated level-shifted drive or direct low-voltage control (e.g., 3.3 V logic referenced to S2).
Is the body diode in the P-channel suitable for reverse current conduction in H-bridge braking?
Yes - the P-channel body diode is rated for continuous forward current up to 4.7 A and exhibits trr = 45 ns, enabling controlled regenerative braking in 24 V H-bridges. However, conduction loss (VSD ≈ 1.4 V) exceeds that of external Schottky diodes, so efficiency-critical designs may add parallel diodes.
Does IRF7105PBF require gate resistors for EMI suppression?
Yes - gate resistors (typically 5–10 Ω) are recommended to damp ringing caused by parasitic Lg-Ciss resonance. The device's low QGD/QG ratio minimizes Miller effect, but uncontrolled edge rates can still excite PCB trace inductance above 30 MHz, violating CISPR 22 Class B limits in compact layouts.
IRF7105PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 330pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7105PBF FAQ
1.How can I place an order for IRF7105PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7105PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7105PBF reliable?
The price and inventory of IRF7105PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7105PBF is usually 5 days.
3.What payment methods are accepted for IRF7105PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7105PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7105PBF?
IRF7105PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7105PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7105PBF?
For technical support, including IRF7105PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7105PBF requirements.
6.How does Aetrix verify that IRF7105PBF is sourced from the original manufacturer or authorized distributors?
All IRF7105PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7105PBF meets industry standards.
7.What is the process for return or replacement of IRF7105PBF?
All IRF7105PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7105PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7105PBF part is unused and in its original packaging.
Return procedure for IRF7105PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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