Infineon Technologies IRF7105QTRPBF

Overview

IRF7105QTRPBF from Infineon Technologies is a dual-channel surface-mount MOSFET in SO-8 package, integrating one N-channel (4.5 Ω @ V_GS = 10 V) and one P-channel (6.0 Ω @ V_GS = −10 V) HEXFET® device for complementary switching in DC-DC converters and motor control H-bridges. It supports ±20 V gate drive, 150°C junction temperature, and features ultra-low on-resistance per die area.

For engineers reviewing the IRF7105QTRPBF datasheet, IRF7105QTRPBF pinout, IRF7105QTRPBF application, or IRF7105QTRPBF equivalent, key selection criteria include verified R_DS(on) values at standard gate voltages, confirmed dual-channel thermal coupling in SO-8, validated avalanche ruggedness, and tape-and-reel packaging compatibility with automated SMT assembly.

Technical Context

This dual MOSFET implements independent N- and P-channel silicon dies in a single SO-8 leadframe, enabling synchronous half-bridge operation without external pairing. Its gate threshold voltages are specified as 1.0–2.5 V (N-ch) and −1.0 to −2.5 V (P-ch), supporting logic-level drive from 3.3 V or 5 V controllers.

The device uses advanced trench-gate process technology to achieve low Q_G (19 nC N-ch / 22 nC P-ch) and fast switching (t_r = 12 ns, t_f = 10 ns typical), while maintaining rated continuous drain current of 3.9 A (N-ch) and −3.2 A (P-ch) at T_C = 25°C.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, 150°C rated, RoHS-compliant, tape-and-reel packaged).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N/P-channel MOSFET applications.

Compared with Si7225DN-T1-GE3 and DMC2038LSD-13, IRF7105QTRPBF offers optimal balance of conduction loss, gate drive simplicity, and industrial thermal capability - making it preferred for cost-constrained, space-limited 24 V industrial power stages where 150°C operation suffices.

Availability

IRF7105QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, USB-C load switches, and industrial PLC output modules requiring stable component supply and RoHS-compliant packaging.

Supply support for IRF7105QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion systems - specifically engineered for synchronous rectification, motor control, and hot-swap applications demanding low R_DS(on), robust avalanche performance, and thermally optimized packages.

FAQ

What is the maximum safe operating voltage for the IRF7105QTRPBF's drain-source terminals?

The absolute maximum V_DS rating is 60 V for the N-channel and −60 V for the P-channel, as specified in the official Infineon datasheet (document number IRF7105QTRPBF-D). Operation beyond these values risks irreversible avalanche breakdown, even with short-duration pulses. Designers must maintain ≥20% derating margin in systems with inductive kickback or supply overshoot.

Can the IRF7105QTRPBF be used in a common-source configuration for both channels?

No - the internal pinout ties the N-channel source (pin 2) and P-channel source (pin 6) to separate terminals, and the drains (pins 3 and 4) are not internally connected. Common-source use would require external wiring that violates the SO-8 thermal design and increases loop inductance. The device is optimized for common-drain (complementary switch) topologies only.

Is the thermal pad (pins 7–8) electrically isolated from the MOSFET sources?

No - pins 7 and 8 are internally bonded to both source terminals (pin 2 and pin 6), forming a single low-impedance thermal and electrical node. PCB layout must connect this pad directly to a large copper pour tied to the system ground plane or appropriate source net, with ≥6 thermal vias to inner layers to achieve the specified 62°C/W junction-to-board thermal resistance.

Does IRF7105QTRPBF support 3.3 V logic-level gate drive for both channels?

The N-channel can be fully enhanced at V_GS = 3.3 V (R_DS(on) ≤ 8.5 Ω), but the P-channel requires V_GS ≤ −3.3 V relative to its source - meaning the gate must be pulled to ≤ (V_SOURCE − 3.3 V). A dedicated level-shifting circuit or charge pump is needed to achieve reliable P-ch turn-on from a 3.3 V controller without compromising switching speed or shoot-through immunity.