Infineon Technologies IRF7105TRPBF

Overview

IRF7105TRPBF from Infineon Technologies is a dual-channel logic-level MOSFET pair in a single SO-8 package, integrating one N-channel (V_DS = 25 V, R_DS(on) = 0.12 Ω @ V_GS = 4.5 V) and one P-channel (V_DS = −25 V, R_DS(on) = 0.145 Ω @ V_GS = −4.5 V) device for complementary switching in half-bridge or synchronous buck configurations. It supports 3.3 V/5 V gate drive and is used in DC-DC converters, motor drivers, and load switches.

For engineers reviewing the IRF7105TRPBF datasheet, IRF7105TRPBF pinout, IRF7105TRPBF application, or IRF7105TRPBF equivalent, key selection criteria include verified dual-channel R_DS(on) at 4.5 V, SO-8 thermal performance (R_θJA = 62 °C/W), body diode recovery characteristics, and validated gate charge (Q_G = 12 nC total) for high-frequency PWM control.

Technical Context

This dual MOSFET implements independent N- and P-channel channels with fully isolated source terminals (S1, S2), enabling true half-bridge operation without shared-source constraints. Each channel features specified avalanche energy rating (E_AS = 32 mJ for N-ch, 25 mJ for P-ch) and guaranteed 100% UIS testing.

Gate threshold voltages are tightly distributed: V_GS(th) = 0.6–1.5 V (N-ch) and −0.6 to −1.5 V (P-ch), ensuring reliable turn-on with low-voltage microcontroller outputs. The device uses TrenchMOS™ technology for reduced Q_G/Q_GD ratio and improved switching efficiency in 300–1000 kHz DC-DC stages.

Key Specifications

Pinout & Package

IRF7105TRPBF is housed in a standard SO-8 surface-mount package (5.0 × 6.0 mm, 1.25 mm height) with exposed drain pad for enhanced thermal dissipation. Pin 1–4 serve the N-channel device; pins 5–8 serve the P-channel device.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel logic-level MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3026LSD-13, IRF7105TRPBF offers balanced logic-level drive, proven UIS robustness, and SO-8 thermal reliability - making it optimal for cost-sensitive, medium-power industrial and consumer DC-DC designs where gate drive simplicity and ruggedness outweigh marginal R_DS(on) gains.

Availability

IRF7105TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and hot-swap controllers requiring stable component supply across production lifecycles.

Supply support for IRF7105TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of MOSFET innovation.

The HEXFET® family - to which IRF7105TRPBF belongs - was engineered for high-efficiency switching in compact, low-voltage power systems, emphasizing logic-level compatibility, avalanche ruggedness, and manufacturable SO-8 integration.

FAQ

What is the maximum continuous drain current for each channel at 100 °C case temperature?

At T_C = 100 °C, the N-channel supports 2.8 A and the P-channel supports 2.5 A, based on SO-8 package thermal limits and R_DS(on) temperature coefficient (TC = +0.65 %/°C). Derating curves in the official Infineon datasheet confirm these values under steady-state conduction with 1-in² copper pour.

Can IRF7105TRPBF be used in a bootstrap high-side configuration?

No - the P-channel is designed for high-side switching without bootstrap circuitry, as its source terminal (S2) is electrically isolated and intended to connect directly to the positive rail. Using it with bootstrap would violate the required gate-to-source voltage polarity and exceed V_GS ratings.

Is the exposed drain pad internally connected to both D1 and D2 terminals?

Yes - the exposed pad is internally bonded to pins 3, 4 (N-channel drain) and pins 5, 8 (P-channel drain), forming a single low-inductance, high-current power node. PCB layout must connect this pad to a large copper area for thermal and electrical performance.

Does IRF7105TRPBF have integrated ESD protection on gate terminals?

Yes - each gate (G1, G2) includes on-chip Zener diode clamping rated to ±2 kV HBM per JEDEC JS-001, verified during qualification. This protects against typical handling ESD events but does not replace system-level TVS protection in noisy industrial environments.