UMW IRF7204TR

Overview

IRF7204TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 surface-mount package, rated for -20V V_DS, 0.060Ω R_DS(on) at -10V V_GS, and -5.3A continuous drain current at 25°C. It delivers ultra-low on-resistance, fast switching (t_d(off) ≤ 150ns), and robust dv/dt immunity for high-efficiency DC-DC conversion and load switching.

For engineers reviewing the IRF7204TR datasheet, IRF7204TR pinout, IRF7204TR application, or IRF7204TR equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility (V_GS(th) = -1.0 to -2.5V), body diode recovery performance (t_rr = 85–100ns), thermal resistance (R_θJA = 50°C/W), and SO-8 dual-die layout suitability for space-constrained power rails.

Technical Context

This device implements a fourth-generation silicon process optimized for low R_DS(on) per die area and enhanced thermal conduction via customized SO-8 leadframe. Its negative threshold voltage enables direct interface with 3.3V/5V logic controllers without level-shifting.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 77–120nC, di/dt = 100A/µs) and low forward drop (V_SD = -1.2V at -1.25A), supporting synchronous rectification and bidirectional current handling in half-bridge configurations.

Key Specifications

Pinout & Package

IRF7204TR uses the JEDEC MS-012AA-compliant SO-8 package with exposed drain pads for improved thermal transfer. The leadframe is modified for dual-die capability and enhanced board-level thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si2301DS-T1-E3, IRF7204TR offers 48% lower R_DS(on) and 96% higher current rating; versus IRF7420TRPBF, it trades 47% higher on-resistance for 40% lower gate charge and proven dv/dt ruggedness in legacy designs.

Availability

IRF7204TR is available at Aetrix Electronics and suitable for load switching, battery protection, DC-DC converter sync rectification, and motor driver half-bridge applications requiring stable component supply and long-term industrial availability.

Supply support for IRF7204TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in consumer, computing, and industrial systems-emphasizing low R_DS(on), fast switching, and rugged thermal design.

FAQ

Is IRF7204TR suitable for 3.3V logic-level gate drive?

Yes. With a gate threshold voltage range of -1.0V to -2.5V, IRF7204TR fully enhances at 3.3V V_GS, delivering its specified 0.060Ω R_DS(on) at -5.3A. This eliminates need for gate driver ICs in many low-power applications, though gate charge (25nC) should be considered for high-frequency switching.

What is the maximum safe operating temperature for IRF7204TR?

The absolute maximum junction temperature is +150°C, and storage temperature range is -55°C to +150°C. At ambient temperatures up to 70°C, continuous drain current is derated to -4.2A. Thermal design must respect R_θJA = 50°C/W on standard FR-4, limiting usable power to 2.5W at 25°C ambient before linear derating applies.

Does IRF7204TR include an integrated body diode, and what are its characteristics?

Yes. It features a monolithic p-n junction body diode with V_SD = -1.2V at -1.25A and TJ = 25°C, reverse recovery time t_rr = 85–100ns, and Q_rr = 77–120nC at di/dt = 100A/µs. These values are measured under standardized conditions and support use in synchronous rectification where diode conduction is intentional.

Can IRF7204TR be used in parallel configurations?

Yes. Its positive temperature coefficient of R_DS(on) (confirmed by normalized on-resistance vs. temperature curves) enables stable current sharing in paralleled configurations. Layout must ensure matched gate drive paths and symmetrical drain/source routing to avoid thermal runaway; SO-8 dual-die capability further supports this topology in compact designs.