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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF720S

Name: IRF720S
Brand: Vishay Siliconix
SKU: IRF720S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF720S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF720S.pdf

Description:: MOSFET N-CH 400V 3.3A D2PAK

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Product details

Overview

IRF720S from Vishay Siliconix is a 400 V, 3.3 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.8 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC power supplies, and motor control circuits requiring rugged switching under inductive loads.

For engineers reviewing the IRF720S datasheet, IRF720S pinout, IRF720S application, or IRF720S equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and real-world substitution guidance-critical for high-reliability industrial power design and layout validation.

Technical Context

The IRF720S employs a third-generation planar vertical DMOS structure optimized for fast switching and robust avalanche performance. Its 400 V V_DS rating and 190 mJ single-pulse avalanche energy support unclamped inductive turn-off in flyback and forward converters without external snubbers.

Thermal design is enabled by low R_thJC = 2.5 °C/W and PCB-mount R_thJA = 40 °C/W, while its 4.0 V/ns peak diode recovery dv/dt rating ensures stable operation during high-speed body diode commutation in synchronous rectification and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Supports primary-side switching in offline 230 VAC SMPS with ≥2× safety margin
R_DS(on) @ V_GS = 10 V	1.8 Ω - Limits conduction loss to ≤20 W at 3.3 A continuous drain current
Q_g	20 nC - Enables efficient gate drive with <1 W average power at 100 kHz using 12 V supply
E_AS	190 mJ - Allows reliable unclamped inductive switching up to 3.3 A without external clamping
T_J Range	−55 °C to +150 °C - Qualified for industrial ambient environments with full parameter guarantee
dv/dt Rating	4.0 V/ns - Prevents spurious turn-on during high di/dt body diode recovery in bridge configurations
P_D @ T_C = 25 °C	50 W - Delivers high power density when mounted on heatsinked D2PAK footprint

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S), lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; 3.3 nC Q_gs enables fast turn-on with minimal Miller effect
D (Drain)	High-voltage output node	Exposed metal tab connects directly to PCB copper pour for thermal dissipation and low-inductance high-current path
S (Source)	Power return reference	Common source node for gate drive loop; internal 7.5 nH source inductance impacts switching waveform fidelity

Key Features

Feature	Design Value
Repetitive avalanche rated	5.0 mJ per pulse - Enables reliable operation in hard-switched topologies with no derating required over 10⁵ cycles
Dynamic dv/dt rating	4.0 V/ns - Eliminates need for gate resistors >18 Ω to suppress false triggering during diode recovery
Fast switching	td(on) = 10 ns, tf = 13 ns - Reduces switching losses below 0.5 W at 100 kHz in 320 V bus applications
Low R_thJC	2.5 °C/W - Permits 40 °C temperature rise at 50 W dissipation with minimal heatsink volume
Body diode t_rr	270 ns typical - Supports ZVS-assisted soft switching in resonant LLC converters without reverse recovery overshoot

Applications

Switch-Mode Power Supply	Motor Drive Inverter
Use Scenario: Primary-side switch in 65–150 W offline flyback converter operating at 65 kHz. IC Role / Device Role / Timing Role: High-voltage power switch handling 320 V DC bus with 3.3 A peak current. Use Value: 190 mJ E_AS absorbs leakage inductance energy during turn-off, eliminating snubber losses and improving efficiency by 1.2%.	Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge driving 2 A continuous load. IC Role / Device Role / Timing Role: Fast-turning N-channel switch enabling PWM frequencies up to 20 kHz. Use Value: 13 ns fall time and 4.0 V/ns dv/dt immunity prevent shoot-through during dead-time transitions.
Industrial Lighting Ballast	UPS Inverter Stage
Use Scenario: Half-bridge switch in electronic HID lamp ballast operating at 250 kHz. IC Role / Device Role / Timing Role: High-frequency switching element managing 400 V transient spikes during lamp ignition. Use Value: 400 V V_DS rating and 150 °C T_J max ensure reliability across lamp life cycle with no derating.	Use Scenario: Output stage switch in 1 kVA line-interactive UPS inverting 360 V DC to 230 V AC. IC Role / Device Role / Timing Role: Ruggedized power switch handling repetitive 3.3 A pulsed currents with body diode conduction. Use Value: 270 ns t_rr and 1.6 V V_SD minimize conduction loss and thermal stress during bidirectional current flow.

Switch-Mode Power Supply

Motor Drive Inverter

Use Scenario: Primary-side switch in 65–150 W offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 320 V DC bus with 3.3 A peak current.

Use Value: 190 mJ E_AS absorbs leakage inductance energy during turn-off, eliminating snubber losses and improving efficiency by 1.2%.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge driving 2 A continuous load.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch enabling PWM frequencies up to 20 kHz.

Use Value: 13 ns fall time and 4.0 V/ns dv/dt immunity prevent shoot-through during dead-time transitions.

Industrial Lighting Ballast

UPS Inverter Stage

Use Scenario: Half-bridge switch in electronic HID lamp ballast operating at 250 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element managing 400 V transient spikes during lamp ignition.

Use Value: 400 V V_DS rating and 150 °C T_J max ensure reliability across lamp life cycle with no derating.

Use Scenario: Output stage switch in 1 kVA line-interactive UPS inverting 360 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Ruggedized power switch handling repetitive 3.3 A pulsed currents with body diode conduction.

Use Value: 270 ns t_rr and 1.6 V V_SD minimize conduction loss and thermal stress during bidirectional current flow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40Z	400 V, 4.0 A, R_DS(on) = 1.5 Ω, Q_g = 22 nC, TO-220 package	Higher current rating but through-hole only; lacks D2PAK thermal performance	Choose STP4NK40Z only if board space allows TO-220 and heatsink mounting is preferred over surface-mount thermal pads
IXTP4N40P	400 V, 4.0 A, R_DS(on) = 1.6 Ω, Q_g = 18 nC, TO-220FP package	Lower Q_g but same package limitation; no avalanche rating specified	Select IXTP4N40P only when gate drive power is critical and avalanche robustness is not required in final design

Compared with IRF720S, STP4NK40Z offers higher current but requires PCB through-holes and sacrifices thermal resistance (R_thJC ≈ 3.5 °C/W), while IXTP4N40P reduces gate drive loss but removes guaranteed avalanche capability-making IRF720S the optimal choice for surface-mount, thermally constrained, and inductive-load-critical applications.

Availability

IRF720S is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and lighting ballasts requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRF720S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF720S belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, high-efficiency switching in off-line and DC-DC power conversion where avalanche tolerance and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRF720S at 100 °C case temperature?

The IRF720S supports 2.1 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.40 W/°C and 50 W P_D rating at 25 °C. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 91044 and applies to D2PAK-mounted units with adequate heatsinking.

Does IRF720S have a specified body diode reverse recovery time?

Yes, the IRF720S has a typical body diode reverse recovery time (t_rr) of 270 ns at T_J = 25 °C, I_F = 3.3 A, and di/dt = 100 A/μs. This parameter is explicitly listed in the "Drain-Source Body Diode Characteristics" section of the datasheet and is critical for evaluating performance in synchronous rectification and half-bridge applications.

Is IRF720S RoHS-compliant and halogen-free?

Yes, the IRF720S variant referenced in the ordering row (IRF720STRRPbF) is lead (Pb)-free and halogen-free, meeting Vishay's material categorization per document 99912. The "PbF" suffix confirms RoHS compliance, and the device is marked accordingly on the package per Vishay's standard part marking guidelines.

What is the gate-source threshold voltage range for IRF720S?

The gate-source threshold voltage (V_GS(th)) for IRF720S is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers and is validated across the full −55 °C to +150 °C operating junction temperature range.

Can IRF720S be paralleled with identical units for higher current handling?

Yes, the IRF720S is explicitly designed for ease of paralleling, as stated in its Features list. Its positive temperature coefficient of R_DS(on) (shown in Fig. 4) ensures current sharing stability, and low gate charge mismatch minimizes dynamic imbalance-enabling scalable current capacity in high-power inverters and PSUs without external current-sense circuitry.

IRF720S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 410 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF720S FAQ

1.How can I place an order for IRF720S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF720S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF720S reliable?

The price and inventory of IRF720S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF720S is usually 5 days.

3.What payment methods are accepted for IRF720S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF720S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF720S?

IRF720S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF720S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF720S?

For technical support, including IRF720S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF720S requirements.

6.How does Aetrix verify that IRF720S is sourced from the original manufacturer or authorized distributors?

All IRF720S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF720S meets industry standards.

7.What is the process for return or replacement of IRF720S?

All IRF720S units undergo pre-shipment inspection (PSI). If there is an issue with IRF720S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF720S part is unused and in its original packaging.

Return procedure for IRF720S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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