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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

UMW IRF7240TR

Name: IRF7240TR
Brand: UMW
SKU: IRF7240TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7240TR

Manufacturer:: UMW

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRF7240TR.pdf

Description:: MOSFET P-CH 40V 10.5A 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

IRF7240TR from Infineon Technologies (formerly International Rectifier) is a P-Channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, designed for high-efficiency load and battery management switching. It delivers R_DS(on) = 15 mΩ @ V_GS = −10 V and −10.5 A continuous drain current at 25°C, with −40 V V_DSS rating and integrated body diode for synchronous rectification in DC-DC converters.

For engineers reviewing the IRF7240TR datasheet, IRF7240TR pinout, IRF7240TR application, or IRF7240TR equivalent, key selection criteria include verified P-channel low-side switching capability, thermal resistance of 50°C/W (surface-mounted), SO-8 leadframe-enhanced thermal performance, and body diode recovery specs (t_rr = 43–65 ns, Q_rr = 75–110 nC) critical for synchronous buck topologies.

Technical Context

This device operates as a voltage-controlled, normally-off P-channel switch with gate threshold voltage (V_GS(th)) ranging from −1.0 V to −3.0 V and forward transconductance (g_fs) of 17 S. Its SO-8 package uses a customized leadframe to improve thermal dissipation and support multi-die configurations without board area penalty.

The integrated body diode exhibits V_SD = −1.2 V at −2.5 A and TJ = 25°C, with reverse recovery time and charge tightly specified for hard-switched applications. Safe operating area (SOA) is defined up to 100 µs single-pulse, limited by R_DS(on) at T_J = 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−40 V - Maximum blocking voltage for low-voltage P-channel high-side or low-side switching in ≤36 V systems
R_DS(on) max	15 mΩ @ V_GS = −10 V - Enables <150 mW conduction loss at 10 A, critical for portable power efficiency
I_D continuous	−10.5 A @ T_A = 25°C - Supports robust load switching in battery protection ICs and e-fuse circuits
t_rr	43–65 ns - Confirmed fast body diode recovery for synchronous rectification in 300–500 kHz DC-DC converters
Q_g	73–110 nC - Gate drive energy requirement directly impacts driver selection and switching loss in PWM control
R_θJA	50 °C/W - Measured on 1 in² Cu board; defines thermal derating slope (20 mW/°C) above 70°C ambient
V_GS(th)	−1.0 to −3.0 V - Ensures reliable turn-on with standard logic-level gate drivers (e.g., −5 V or −8 V rails)

Pinout & Package

IRF7240TR is housed in a surface-mount SO-8 package conforming to JEDEC MS-012AA outline, featuring a modified leadframe for enhanced thermal performance and multiple-die compatibility. The package supports vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Internally paralleled drain terminals - reduce package inductance and improve current sharing in multi-die layout
6	Gate (G)	Control input - requires negative V_GS for turn-on; Miller charge (Q_gd = 17–26 nC) affects switching speed
7, 8	Source (S)	Power return path - tied to system ground in low-side switch configuration; body diode anode

Key Features

Feature	Design Value
Ultra-low R_DS(on)	15 mΩ @ −10 V enables <0.1 W conduction loss at 8 A, reducing thermal design burden in space-constrained PCBs
Enhanced SO-8 thermal leadframe	50°C/W R_θJA improves power handling over standard SO-8 by ~30%, validated on 1 in² Cu board
Fast body diode recovery	t_rr = 43–65 ns and Q_rr = 75–110 nC allow use in synchronous rectifiers without external Schottky replacement
Logic-level compatible gate	V_GS(th) range (−1.0 to −3.0 V) ensures full enhancement with −4.5 V or −5 V gate drive, simplifying driver design

Applications

Battery Protection Circuit

Load Switch for USB-C PD

Use Scenario: Overcurrent and short-circuit protection in Li-ion battery packs using dedicated protection ICs.

IC Role / Device Role: Low-side P-channel switch controlling discharge path; body diode blocks reverse current during fault conditions.

Use Value: 15 mΩ R_DS(on) minimizes voltage drop across sense resistor and extends runtime; SO-8 footprint fits compact battery management modules.

Use Scenario: Controlled hot-swap insertion of USB-C power delivery accessories with inrush limiting.

IC Role / Device Role: High-side load switch enabling soft-start and reverse-current blocking via gate-controlled turn-on.

Use Value: −40 V V_DSS withstands 20 V PD bus transients; fast t_rr prevents shoot-through in dual-MOSFET PD controllers.

DC-DC Synchronous Buck Converter

e-Fuse for Industrial I/O Modules

Use Scenario: Secondary-side synchronous rectification in 12 V → 3.3 V/5 V buck converters for FPGA or microcontroller power rails.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary output.

Use Value: Verified Q_rr = 75–110 nC and V_SD = −1.2 V enable >92% efficiency at 5 A, reducing heatsink requirements.

Use Scenario: Programmable current-limiting protection for 24 V industrial digital I/O channels.

IC Role / Device Role: Precision current-sense enabled e-fuse where R_DS(on) tolerance (±20%) supports accurate trip-point calibration.

Use Value: Tight R_DS(on) spec (0.015 Ω typ.) allows ±5% current limit accuracy without external shunt resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7204TRPBF	R_DS(on) = 28 mΩ @ −4.5 V; lower V_DSS (−30 V); higher Q_g (100 nC)	Less suitable for 36 V bus systems; slower switching due to higher gate charge	Prefer when cost sensitivity outweighs efficiency and voltage margin requirements
SI7157DP-T1-GE3	R_DS(on) = 12 mΩ @ −4.5 V; SO-8; −30 V V_DSS; tighter V_GS(th) (−1.2 to −2.4 V)	Not rated for −40 V operation; optimized for 5 V logic drive but lacks 36 V system headroom	Select only if system bus voltage remains ≤24 V and gate drive is strictly −4.5 V

Compared with IRF7240TR, IRF7204TRPBF trades off on-resistance and voltage rating for lower cost, while SI7157DP-T1-GE3 improves low-voltage gate drive compatibility but sacrifices 36 V system safety margin-making IRF7240TR uniquely balanced for 24–36 V battery and industrial load switching.

Availability

IRF7240TR is available at Aetrix Electronics and suitable for battery protection circuits, USB-C PD load switches, and industrial e-fuse designs requiring stable component supply, long-lifecycle availability, and traceable sourcing for production programs.

Supply support for IRF7240TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, with global manufacturing, quality certification to IATF 16949, and broad automotive and industrial qualification.

The HEXFET® Power MOSFET product line targets high-efficiency power conversion and intelligent load control, emphasizing low R_DS(on), fast switching, and rugged SOA for battery-powered and industrial equipment.

FAQ

What is the maximum safe operating voltage for IRF7240TR in continuous DC blocking?

The IRF7240TR has a guaranteed V_DSS rating of −40 V, meaning it can continuously block up to 40 V in reverse polarity without breakdown. This rating is tested at T_J = 25°C with I_D = −250 µA and includes a 20% safety margin per JEDEC standards. Operation beyond this voltage risks avalanche failure even with gate grounded.

Can IRF7240TR be used as a high-side switch with 0 V to −12 V gate drive?

Yes - IRF7240TR is a P-channel device requiring negative gate-to-source voltage for turn-on. Driving the gate to −12 V (with source at −12 V) yields V_GS = 0 V and keeps the device off; pulling gate to 0 V (V_GS = −12 V) fully enhances it. A dedicated high-side gate driver or level-shifter is required to swing gate voltage relative to the source rail.

Does IRF7240TR require a gate resistor for ESD or switching stability?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 520 pF) and PCB inductance during fast switching. While not mandatory for ESD protection (built-in gate oxide protection exists), it prevents unintended oscillation and reduces EMI in PWM applications above 100 kHz.

How does the SO-8 package modification affect thermal performance compared to standard SO-8 MOSFETs?

The IRF7240TR's SO-8 uses a customized copper leadframe that increases thermal cross-section and reduces junction-to-ambient resistance to 50°C/W (vs. typical 62–75°C/W). This is measured on a 1 in² Cu board and enables 20–30% higher continuous power dissipation before reaching 150°C junction temperature, confirmed in Fig 11's transient impedance curves.

IRF7240TR Specifications

Product attributes: Attribute value

Manufacturer:: UMW

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRF7240TR FAQ

1.How can I place an order for IRF7240TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7240TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7240TR reliable?

The price and inventory of IRF7240TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7240TR is usually 5 days.

3.What payment methods are accepted for IRF7240TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7240TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7240TR?

IRF7240TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7240TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7240TR?

For technical support, including IRF7240TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7240TR requirements.

6.How does Aetrix verify that IRF7240TR is sourced from the original manufacturer or authorized distributors?

All IRF7240TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7240TR meets industry standards.

7.What is the process for return or replacement of IRF7240TR?

All IRF7240TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7240TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7240TR part is unused and in its original packaging.

Return procedure for IRF7240TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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