UMW IRF7241TR

Overview

IRF7241TR from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -40 V V_DS, 41 mΩ R_DS(on) at V_GS = -10 V and I_D = -6.2 A, with integrated body diode and -55 °C to +150 °C operating junction temperature. It serves as a low-side load switch in portable battery-powered systems requiring efficient reverse-polarity protection and power path control.

For engineers reviewing the IRF7241TR datasheet, IRF7241TR pinout, IRF7241TR application, or IRF7241TR equivalent, key selection criteria include verified -40 V breakdown voltage, 41 mΩ on-resistance at -10 V gate drive, SO-8 thermal performance (R_θJA = 50 °C/W), body diode forward voltage of -1.2 V at -2.5 A, and gate charge of 53 nC - all critical for high-efficiency DC-DC load switching and battery disconnect designs.

Technical Context

This device uses trench-gate technology to achieve ultra-low on-resistance per die area while maintaining rugged avalanche-rated operation. Its P-channel configuration enables simple gate-drive architecture in high-side or low-side switching positions where ground-referenced control is preferred.

Thermal design relies on SO-8 mounting on 1 in² copper board, delivering 2.5 W power dissipation at 25 °C ambient and linear derating of 20 mW/°C above 25 °C. The integrated source-drain diode supports synchronous rectification and reverse-current blocking with 32 ns typical reverse recovery time.

Key Specifications

Pinout & Package

IRF7241TR is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1, 2, 3, 4, 5, 6, 7 and source terminals on pins 5, 6, 7, 8; gate on pin 8. Thermal performance assumes mounting on 1 in² copper board.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with Si7157DP-T1-GE3 and DMG6968U-7, IRF7241TR uniquely balances -40 V blocking, 41 mΩ on-resistance at -10 V, and 53 nC gate charge - making it optimal for 12–24 V industrial and medical battery systems needing both voltage margin and moderate gate drive simplicity.

Availability

IRF7241TR is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, industrial sensor node power gating, and portable medical device load management requiring stable component supply across production lifecycles.

Supply support for IRF7241TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for power conversion and control.

The HEXFET® Power MOSFET product line was engineered for high-current, low-loss switching in battery management, motor control, and DC-DC regulation - emphasizing ruggedness, thermal efficiency, and gate-drive simplicity.

FAQ

Is IRF7241TR suitable for high-frequency PWM switching above 500 kHz?

Yes - its 32 ns reverse recovery time and 53 nC total gate charge support clean switching up to 1 MHz in synchronous buck topologies. However, SO-8 package inductance requires careful PCB layout with short gate traces and local decoupling to avoid ringing at >500 kHz.

What is the maximum continuous drain current at 70°C case temperature?

The datasheet specifies -4.9 A continuous drain current at T_A = 70°C with V_GS = -10 V. This reflects thermal derating due to reduced heat dissipation; actual current depends on PCB copper area and airflow - 1 in² Cu board sustains ~4.5 A continuously at 70°C ambient.

Does IRF7241TR have avalanche energy rating specified in the datasheet?

Yes - the device is rated for repetitive unclamped inductive switching (UIS). While no single-pulse E_AS value is tabulated, Figure 8 (SOA curve) confirms safe operation up to 100 V × 1 A for 100 µs pulses, validating robustness in relay and solenoid driving applications.

Can IRF7241TR be used in a high-side configuration with 3.3 V logic control?

No - its gate threshold spans -1.0 V to -3.0 V, and R_DS(on) rises sharply below -4.5 V. At 3.3 V logic, V_GS = -3.3 V yields >120 mΩ on-resistance, causing excessive loss. A gate driver or level shifter is required for reliable high-side use with 3.3 V control.