Infineon Technologies IRF7301PBF

Overview

IRF7301PBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in a single SO-8 package, configured as two independent 20 V, 5.4 A, 38 mΩ (at V_GS = 4.5 V) power switches with integrated body diodes. It operates at T_J = 150 °C, supports logic-level gate drive down to 2.5 V, and is used in synchronous buck converters for portable DC-DC regulation.

For engineers reviewing the IRF7301PBF datasheet, IRF7301PBF pinout, IRF7301PBF application, or IRF7301PBF equivalent, key selection criteria include R_DS(on) at low gate voltage, dual-channel thermal coupling in SO-8, reverse diode recovery performance (t_rr = 20 ns), and gate charge Q_G = 12 nC for high-frequency switching efficiency.

Technical Context

This device integrates two discrete N-channel MOSFETs sharing a common source connection per channel (D1/G1/S1 and D2/G2/S2), enabling half-bridge or dual low-side switching topologies. Its SO-8 thermally enhanced layout allows simultaneous conduction with junction-to-case thermal resistance θ_JC = 3.5 °C/W.

The MOSFETs feature fast turn-on (t_d(on) = 10 ns) and turn-off (t_d(off) = 25 ns) times at V_GS = 10 V, with gate threshold voltage V_GS(th) = 1.0–2.5 V and body diode reverse recovery time t_rr = 20 ns - critical for minimizing shoot-through loss in synchronous rectification.

Key Specifications

Pinout & Package

IRF7301PBF uses an SO-8 surface-mount package (JEDEC MS-012AA) with exposed thermal pad. Pin 1 is G1, Pin 2 is S1, Pin 3 is D1, Pin 4 is D1, Pin 5 is D2, Pin 6 is S2, Pin 7 is G2, Pin 8 is D2 - dual-channel layout with shared drain terminals per side (D1/D1 and D2/D2) and isolated gate/source pairs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7301PBF offers the best balance of low-voltage R_DS(on), verified fast body diode recovery, and gate drive compatibility - making it optimal for 12 V–20 V synchronous buck designs where diode loss dominates.

Availability

IRF7301PBF is available at Aetrix Electronics and suitable for portable power delivery, FPGA point-of-load regulation, industrial motor control, and LED backlighting requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF7301PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.

IRF7301PBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency DC-DC conversion in space-constrained, thermally demanding applications such as consumer adapters and embedded power modules.

FAQ

What is the maximum continuous drain current for each channel at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current per channel is 3.2 A. This is derived from the SO-8 package's thermal limits and the R_DS(on) temperature coefficient, with derating applied per the Safe Operating Area (SOA) curve in Figure 4 of the official datasheet. The dual-channel layout does not allow full 5.4 A on both channels simultaneously at elevated temperatures without forced cooling.

Can IRF7301PBF be used in a high-side switch configuration with bootstrap gate drive?

Yes - each channel operates independently, so G1/S1/D1 can serve as a high-side switch when paired with a bootstrap capacitor and gate driver (e.g., IR2104). The 2.5 V V_GS(th) minimum ensures reliable turn-on with typical bootstrap voltages (10–12 V), and the 20 ns t_rr prevents cross-conduction during dead-time transitions in half-bridge topologies.

Is the SO-8 package lead-free and RoHS compliant?

Yes - the "PBF" suffix explicitly denotes lead-free (Pb-free) construction. The device meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1, with floor life unlimited when stored at ≤30 °C/60% RH. Marking includes "P" for lead-free and date code per YWW format.

Does IRF7301PBF have integrated ESD protection on gate terminals?

No - the device lacks on-chip gate ESD protection diodes. External 10 kΩ current-limiting resistors and TVS clamps (e.g., SMAJ5.0A) are required on G1 and G2 lines per IEC 61000-4-2 Level 4 (8 kV contact) requirements. Gate oxide breakdown voltage is rated at ±20 V, making unprotected handling or hot-plug insertion unsafe.