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Infineon Technologies IRF7303PBF
- Part No.:
- IRF7303PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7303PBF.pdf
- Description:
- MOSFET 2N-CH 30V 4.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,143
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Product details
Overview
IRF7303PBF from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent enhancement-mode power switches with 30 V VDS, 5.7 A continuous drain current per channel, and 32 mΩ RDS(on) at VGS = 10 V. It operates in synchronous buck converters for DC-DC regulation in portable computing power stages.
For engineers reviewing the IRF7303PBF datasheet, IRF7303PBF pinout, IRF7303PBF application, or IRF7303PBF equivalent, key selection criteria include dual-channel RDS(on) matching, gate charge (QG = 14 nC), thermal resistance (RθJA = 50 °C/W), and SO-8 footprint compatibility with high-frequency switching designs.
Technical Context
This device integrates two discrete N-channel MOSFETs in a single SO-8 package, sharing no internal connection between channels - each has independent source, drain, and gate terminals. Its low RDS(on) and optimized gate charge support efficient 500 kHz–1 MHz switching in point-of-load regulators.
The MOSFETs feature fast turn-on (td(on) = 10 ns) and turn-off (td(off) = 25 ns) times at VGS = 10 V, with body diodes rated for 4.5 A continuous reverse recovery current and 30 V reverse blocking capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source voltage before avalanche breakdown; defines safe operating range in 24 V input DC-DC stages. |
| RDS(on) @ VGS=10 V | 32 mΩ per channel - Directly determines conduction loss in high-current power paths; enables ≤1.8 W dissipation at 7.5 A. |
| ID (continuous) | 5.7 A per channel - Specifies maximum steady-state current under TC = 25 °C; derates to 3.5 A at TC = 100 °C. |
| QG | 14 nC - Total gate charge required to fully switch one channel; sets minimum driver strength and switching loss budget. |
| RθJA | 50 °C/W - Junction-to-ambient thermal resistance in standard SO-8 PCB layout; limits max power before exceeding 150 °C junction temperature. |
| tr/tf | 15 ns / 10 ns - Rise/fall times at ID = 2.4 A, VDS = 24 V; constrains EMI generation and dead-time requirements. |
Pinout & Package
IRF7303PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with 1.27 mm lead pitch, 4.9 mm × 6.0 mm body, and exposed drain pad for thermal enhancement. Pin numbering follows top-view orientation with pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls turn-on/turn-off of first MOSFET; requires ≥4.5 V threshold to ensure full enhancement. |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; electrically isolated from S2 unless externally tied. |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switching node; connected to exposed pad for thermal conduction. |
| 4 (D2) | Drain of Channel 2 | Independent high-current output path; shares thermal pad but not electrical connection with D1. |
| 5 (S2) | Source of Channel 2 | Reference node for Channel 2; must be routed separately from S1 to avoid cross-talk. |
| 6 (G2) | Gate of Channel 2 | Independent control input; gate drive must be isolated from G1 to prevent timing skew. |
| 7, 8 (Exposed Pad) | Drain Connection / Thermal Path | Internally connected to both D1 and D2; soldered to PCB copper pour for heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel MOSFETs | Enables compact half-bridge or synchronous rectifier implementation without external isolation components. |
| Low gate charge (QG = 14 nC) | Reduces driver IC power consumption and allows use of low-cost gate drivers in battery-powered systems. |
| Enhancement-mode operation | Ensures default-OFF behavior during power-up or gate floating, improving system safety and startup reliability. |
| 150 °C maximum junction temperature | Supports operation in thermally constrained environments such as sealed industrial enclosures or automotive under-hood modules. |
Applications
| Laptop CPU Voltage Regulator | USB-C PD Power Delivery Module |
|---|---|
Use Scenario: Provides high-efficiency 1–2 V output at up to 25 A for modern x86 processors using multiphase buck topology. IC Role / Device Role: Low-side synchronous rectifier in each phase leg, paired with external high-side FET. Use Value: 32 mΩ RDS(on) minimizes conduction loss at 10–15 A per phase, enabling >92% efficiency at full load. | Use Scenario: Implements 5–20 V programmable output stage in compact USB-C PD adapters with dual-output capability. IC Role / Device Role: Dual-channel switch controlling parallel output paths or independent 5 V / 9 V rails. Use Value: Independent gate control allows precise sequencing and fault isolation between output rails without added logic. |
| Industrial PLC I/O Power Switch | LED Driver Current Sink Array |
Use Scenario: Drives 24 V solenoid loads in programmable logic controller backplanes with overcurrent protection. IC Role / Device Role: High-side switch for two independent 24 V outputs, with integrated thermal shutdown. Use Value: 30 V rating accommodates 24 V nominal + 25% supply ripple; SO-8 footprint simplifies automated assembly. | Use Scenario: Sinks constant current for RGB LED strings in architectural lighting controllers requiring color-mixing precision. IC Role / Device Role: Dual-channel PWM-controlled current sink, with matched RDS(on) ensuring uniform brightness across channels. Use Value: <0.5% RDS(on) mismatch between channels eliminates visible color shift during dimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 28 mΩ @ 10 V, QG = 16.5 nC, same SO-8 package | Slightly lower on-resistance but higher gate charge increases switching loss at >1 MHz | Preferred for ultra-low conduction loss priority; verify gate driver slew rate capability. |
| DMN3028LSD-13 | RDS(on) = 30 mΩ @ 10 V, QG = 12.5 nC, SO-8 with enhanced thermal pad | Lower gate charge reduces driver stress; thermal pad design improves RθJA by 8 °C/W | Better for thermally limited layouts; requires updated PCB stencil for larger thermal pad. |
Compared with IRF7303PBF, Si7852DP offers marginally better conduction efficiency but demands stronger gate drive, while DMN3028LSD delivers superior thermal performance and lower switching loss at the cost of tighter layout constraints for the thermal pad.
Availability
IRF7303PBF is available at Aetrix Electronics and suitable for laptop VRMs, USB-C PD modules, and industrial PLC I/O power switching requiring stable component supply and long-term production continuity.
Supply support for IRF7303PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.
The HEXFET® family - to which IRF7303PBF belongs - was engineered for high-efficiency DC-DC conversion in space-constrained applications, emphasizing low RDS(on), fast switching, and robust thermal performance in standard packages.
FAQ
Is IRF7303PBF RoHS-compliant and halogen-free?
Yes, IRF7303PBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with halogen content below 900 ppm total bromine + chlorine. The "PBF" suffix explicitly denotes lead-free finish, and material declarations confirm compliance with IPC-1752 Class B reporting standards.
Can IRF7303PBF be used in linear mode (ohmic region) operation?
No - IRF7303PBF is not characterized or rated for sustained linear-mode operation. Its Safe Operating Area (SOA) curve shows pulsed operation only up to 10 ms at 25 °C ambient; continuous linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA derating data beyond 100 µs pulses.
What is the maximum recommended gate drive voltage?
The absolute maximum gate-to-source voltage is ±20 V, but Infineon specifies 10 V as the optimal drive level for full enhancement with minimal gate oxide stress. Driving above 15 V provides negligible RDS(on) improvement (<2%) while increasing risk of gate oxide degradation over 100,000+ cycles.
Does the exposed pad require electrical connection?
Yes - the exposed pad is internally connected to both drains (D1 and D2) and must be soldered to a PCB copper pour tied to the drain net. Leaving it unconnected degrades thermal performance by >40% and violates JEDEC MS-012AA mechanical specifications, risking solder joint fatigue under thermal cycling.
IRF7303PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7303PBF FAQ
1.How can I place an order for IRF7303PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7303PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7303PBF reliable?
The price and inventory of IRF7303PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7303PBF is usually 5 days.
3.What payment methods are accepted for IRF7303PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7303PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7303PBF?
IRF7303PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7303PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7303PBF?
For technical support, including IRF7303PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7303PBF requirements.
6.How does Aetrix verify that IRF7303PBF is sourced from the original manufacturer or authorized distributors?
All IRF7303PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7303PBF meets industry standards.
7.What is the process for return or replacement of IRF7303PBF?
All IRF7303PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7303PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7303PBF part is unused and in its original packaging.
Return procedure for IRF7303PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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