Infineon Technologies IRF7303QTRPBF

Overview

IRF7303QTRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in SO-8 package, designed for high-efficiency synchronous rectification and load switching. It features R_DS(on) = 24 mΩ @ V_GS = 10 V per channel, 150°C maximum junction temperature, and 4.0 A continuous drain current per channel at T_C = 25°C. Used in DC-DC converters and battery-powered motor drives.

For engineers reviewing the IRF7303QTRPBF datasheet, IRF7303QTRPBF pinout, IRF7303QTRPBF application, or IRF7303QTRPBF equivalent, key selection criteria include dual-channel on-resistance matching, SO-8 thermal performance, gate threshold voltage consistency (V_GS(th) = 1.0–2.5 V), and avalanche ruggedness rating.

Technical Context

This device integrates two identical N-channel MOSFETs in a single SO-8 surface-mount package with shared source terminals (S1/S2) and independent gates (G1/G2) and drains (D1/D2). Its advanced HEXFET® process enables low R_DS(on) and fast switching (t_d(on) ≈ 10 ns, t_f ≈ 15 ns) while maintaining robust repetitive avalanche capability (E_AS = 12 mJ).

The dual configuration supports synchronous buck topologies where one FET acts as high-side switch and the other as low-side synchronous rectifier. Gate drive compatibility with 4.5 V logic-level signals ensures direct interfacing with standard PWM controllers without level-shifting.

Key Specifications

Pinout & Package

SO-8 package with exposed drain pads (D1/D2 tied internally to package backside for thermal enhancement); 8-pin surface-mount outline conforming to JEDEC MS-012AA, 1.27 mm pitch, 5.0 mm × 6.2 mm body size, 1.75 mm max height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7303QTRPBF offers optimal balance of R_DS(on), Q_G, and avalanche ruggedness for 300–800 kHz synchronous buck converters in space-constrained industrial power supplies.

Availability

IRF7303QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, brushed DC motor drivers, and hot-swap controllers requiring stable component supply across production lifecycles.

Supply support for IRF7303QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency power conversion in consumer, industrial, and automotive applications, emphasizing low R_DS(on), fast switching, and rugged reliability under transient stress.

FAQ

What is the maximum continuous drain current per channel at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current per channel is 2.8 A. This derating is based on the device's thermal resistance R_θJC = 40°C/W and maximum junction temperature of 150°C. The SO-8 package's exposed drain pad must be soldered to ≥1 cm² of 2-oz copper for this rating to be achievable.

Can IRF7303QTRPBF be used in parallel configurations across multiple devices?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing when paralleled. However, gate drive routing must be symmetrical (matched trace length and impedance), and each device requires individual 10 Ω gate resistors to prevent oscillation. Layout must maintain equal thermal exposure to avoid thermal runaway.

Is the exposed pad electrically connected to any internal terminal?

Yes - the exposed pad is internally connected to both drain terminals (D1 and D2). It must be soldered to a PCB copper pour tied to the system's high-side power rail or ground plane depending on circuit topology. Floating or unconnected pads cause thermal failure and violate JEDEC MS-012AA mechanical compliance.

Does IRF7303QTRPBF support 3.3 V microcontroller GPIO direct drive?

Yes - with V_GS(th) as low as 1.0 V and guaranteed turn-on at 2.5 V, it fully enhances at 3.3 V. However, R_DS(on) increases to ~38 mΩ at 3.3 V, raising conduction loss by ~60%. For best efficiency, use 5 V gate drive or add a simple discrete level shifter.