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Infineon Technologies IRF7303TRPBF
- Part No.:
- IRF7303TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7303TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 4.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,293
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Product details
Overview
IRF7303TRPBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in SO-8 package, configured as two independent 30 V, 5.7 A, 42 mΩ (at VGS = 10 V) power switches with integrated body diodes. It operates at TJ = 150 °C and supports logic-level gate drive down to 4.5 V, commonly used in synchronous buck converters and high-side/low-side DC-DC power stages.
For engineers reviewing the IRF7303TRPBF datasheet, IRF7303TRPBF pinout, IRF7303TRPBF application, or IRF7303TRPBF equivalent, key selection criteria include RDS(on) at 4.5 V, dual-channel thermal coupling, gate charge (QG = 19 nC), and SO-8 layout compatibility for compact point-of-load designs.
Technical Context
This device integrates two matched N-channel MOSFETs in a single SO-8 package, enabling half-bridge or dual-switch topologies without inter-device timing skew. Each channel delivers 5.7 A continuous drain current with 42 mΩ on-resistance at 10 V gate drive and 30 mΩ at 10 V with pulse conditions - critical for minimizing conduction loss in 12 V input DC-DC regulators.
The MOSFETs share a common source connection per channel (S1/G1/D1 and S2/G2/D2), supporting independent gate control. Body diode reverse recovery time (trr) is specified at ≤ 45 ns with Qrr = 23 nC, enabling efficient synchronous rectification in high-frequency (>500 kHz) switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage suitable for 12 V bus systems with margin against transients |
| RDS(on) @ VGS = 10 V | 42 mΩ - Enables <1.2 W conduction loss at 5.7 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 60 mΩ - Ensures usable switching performance with 5 V or 3.3 V logic-level drivers |
| QG | 19 nC - Low gate charge allows fast turn-on with moderate gate driver current (e.g., 1 A peak) |
| ID (continuous) | 5.7 A - Rated per channel at TC = 100 °C, supporting 6–8 A pulsed loads in typical PCB layouts |
| trr | ≤45 ns - Fast body diode recovery minimizes shoot-through risk and EMI in synchronous rectifiers |
| PD | 2 W - Power dissipation limit at TC = 25 °C; derates to ~1.2 W at TC = 100 °C |
Pinout & Package
IRF7303TRPBF uses the standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 mm × 6.0 mm footprint, 1.27 mm lead pitch, with exposed thermal pad for enhanced heat transfer. Pin numbering follows top-view orientation with pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires 4.5–15 V drive relative to S1 |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1; tied to power ground or low-side switch node |
| 3 (D1) | Drain of Channel 1 | High-current output terminal; connects to input rail or inductor node in buck stage |
| 4 (D2) | Drain of Channel 2 | High-current output terminal for second MOSFET; electrically isolated from D1 |
| 5 (S2) | Source of Channel 2 | Return path for Channel 2; may be connected to D1 in half-bridge configuration |
| 6 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; referenced to S2 |
| 7, 8 | Thermal Pad / Exposed Drain | Internally connected to D1 and D2; must be soldered to PCB copper for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables space-efficient half-bridge or dual-output DC-DC without discrete pairing mismatch |
| Logic-level gate threshold | VGS(th) = 1.0–2.4 V ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO |
| Low QGD/QG ratio | QGD = 7.5 nC / QG = 19 nC improves switching controllability and reduces Miller-induced oscillation |
| Enhanced body diode ruggedness | Specified UIS rating of 100 mJ supports inductive load switching without external snubbers |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), suitable for standard reflow profiles |
Applications
| Server VRM Power Stage | USB-C PD Adapter Primary Switch |
|---|---|
Use Scenario: High-efficiency 48 V to 12 V intermediate bus conversion in rack-mounted servers. IC Role / Device Role / Timing Role: Dual-channel MOSFET serves as synchronous rectifier pair in interleaved buck converter, operating at 300–600 kHz. Use Value: 42 mΩ RDS(on) and 19 nC QG reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% vs. discrete alternatives. | Use Scenario: Secondary-side synchronous rectification in 65 W USB-C power delivery adapters. IC Role / Device Role / Timing Role: Replaces Schottky diodes in LLC resonant converter output stage, driven by dedicated SR controller. Use Value: 30 mΩ RDS(on) at 10 V and 45 ns trr cut forward voltage drop by >0.4 V, lowering output rectifier temperature rise by 18 °C. |
| Automotive ADAS Camera Power Supply | Industrial PLC I/O Module Protection |
Use Scenario: Compact 5 V/3 A power rail generation for CMOS image sensors in rear-view cameras. IC Role / Device Role / Timing Role: Dual N-MOSFET implements low-side switch + load switch with independent enable control. Use Value: Independent gate control enables staggered startup sequencing and fault-isolated shutdown per sensor rail. | Use Scenario: Overcurrent-protected 24 V digital output driver for industrial fieldbus modules. IC Role / Device Role / Timing Role: One channel acts as protected high-side switch; second provides redundant sensing path or auxiliary load control. Use Value: Matched RDS(on) and thermal coupling allow accurate current mirror-based overcurrent detection with ±3% tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 32 mΩ @ 10 V; QG = 22 nC; SO-8, but no exposed drain pad | Lacks thermal pad - limits sustained current to ≤4.5 A at TC = 100 °C | Preferred where board-level thermal relief is available and lower RDS(on) outweighs thermal constraints |
| DMN3028LSD-13 | RDS(on) = 28 mΩ @ 10 V; VGS(th) = 1.2–2.2 V; same SO-8 with thermal pad | Higher gate threshold spread increases risk of partial turn-on during slow-rising control signals | Better for high-efficiency fixed-frequency converters where gate drive slew rate is tightly controlled |
Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7303TRPBF offers balanced trade-offs: superior thermal performance via exposed pad, tighter VGS(th) distribution (1.0–2.4 V), and proven ruggedness in repetitive UIS events - making it optimal for cost-sensitive industrial and automotive power stages requiring reliability under transient stress.
Availability
IRF7303TRPBF is available at Aetrix Electronics and suitable for server VRM power stages, USB-C PD adapter secondary-side rectification, and automotive ADAS camera power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRF7303TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The StrongIRFET™ product line - to which IRF7303TRPBF belongs - targets high-reliability, high-current power switching in space-constrained applications, emphasizing low RDS(on), robust avalanche capability, and thermal stability across automotive and industrial temperature ranges.
FAQ
What is the maximum safe operating junction temperature for IRF7303TRPBF?
The absolute maximum junction temperature is 150 °C, and the device is characterized for continuous operation up to this limit. Derating curves confirm 5.7 A continuous current is sustainable at TC = 100 °C when mounted on 1-in² 2-oz copper with thermal vias to inner layers. Operation beyond 150 °C risks irreversible parametric shift and bond wire failure.
Can IRF7303TRPBF be used in a bootstrap-gated high-side configuration?
No - IRF7303TRPBF contains only N-channel MOSFETs with source terminals electrically isolated per channel. For high-side switching, an external level-shifting gate driver is required to bias G1/G2 above D1/D2 potential. It is not internally configured for self-biased bootstrap operation like dedicated high-side driver ICs.
Is the thermal pad (pins 7–8) internally connected to both drains?
Yes - pins 7 and 8 are part of a single exposed copper pad internally bonded to both D1 and D2 drain terminals. This design provides shared thermal conduction while maintaining electrical isolation between the two channels' source and gate nodes. The pad must be soldered to a dedicated PCB thermal plane with ≥4 thermal vias for rated current handling.
Does IRF7303TRPBF support paralleling of its two channels for higher current?
Yes - the matched RDS(on) (±10% typical), identical thermal resistance, and shared case temperature enable effective current sharing. When paralleled with proper gate routing symmetry and Kelvin-source connections, total continuous current can reach 10 A at TC = 100 °C, provided PCB copper area and via count are scaled accordingly.
IRF7303TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7303TRPBF FAQ
1.How can I place an order for IRF7303TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7303TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7303TRPBF reliable?
The price and inventory of IRF7303TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7303TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7303TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7303TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7303TRPBF?
IRF7303TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7303TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7303TRPBF?
For technical support, including IRF7303TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7303TRPBF requirements.
6.How does Aetrix verify that IRF7303TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7303TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7303TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7303TRPBF?
All IRF7303TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7303TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7303TRPBF part is unused and in its original packaging.
Return procedure for IRF7303TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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