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Infineon Technologies IRF7303TRPBFXTMA1
- Part No.:
- IRF7303TRPBFXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7303TRPBFXTMA1.pdf
- Description:
- MOSFET 2N-CH 30V 4.9A 8DSO-902
- Quantity:
- Payment:
- Shipping:
Inventory:10,710
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Product details
Overview
IRF7303TRPBFXTMA1 from Infineon Technologies is a dual N-channel MOSFET in SO-8 package, configured as two independent enhancement-mode power switches with 30 V VDS, 5.7 mΩ RDS(on) @ VGS = 10 V, and 4.0 A continuous drain current per channel. It serves as synchronous rectifier or load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7303TRPBFXTMA1 datasheet, IRF7303TRPBFXTMA1 pinout, IRF7303TRPBFXTMA1 application, or IRF7303TRPBFXTMA1 equivalent, key selection criteria include dual-channel RDS(on) matching, gate threshold voltage consistency (1–2.5 V), SO-8 thermal performance, and body diode reverse recovery characteristics for high-frequency switching.
Technical Context
This device integrates two discrete N-channel MOSFETs sharing a common source connection in a single SO-8 package-enabling half-bridge or dual-switch topologies without external interconnect parasitics. Each channel supports 30 V blocking voltage, 4.0 A continuous ID, and exhibits matched on-resistance (5.7 mΩ typ. @ 10 V) and gate charge (QG = 12 nC typ.) across channels.
The MOSFETs feature fast switching (td(on) = 10 ns, tf = 15 ns), low gate-to-source capacitance (Ciss = 490 pF), and a body diode with 1.2 V forward drop at 2.4 A. Thermal resistance RθJA is 62 °C/W, validated under JEDEC MS-012AA mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage before avalanche breakdown |
| RDS(on) @ VGS = 10 V | 5.7 mΩ - On-resistance per channel determines conduction loss in 12 V synchronous buck stages |
| ID (continuous) | 4.0 A per channel - Continuous current rating at TC = 25 °C with SO-8 PCB layout |
| QG | 12 nC - Total gate charge defines drive strength requirement for 500 kHz–1 MHz PWM control |
| VGS(th) | 1.0–2.5 V - Gate threshold range ensures reliable turn-on with 3.3 V or 5 V logic-level drivers |
| RθJA | 62 °C/W - Junction-to-ambient thermal resistance under standard JEDEC 2S2P test board |
| Body diode VSD | 1.2 V @ IS = 2.4 A - Forward voltage impacts reverse-recovery loss during freewheeling in buck converters |
Pinout & Package
IRF7303TRPBFXTMA1 uses the industry-standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin numbering follows top-view orientation with pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side switching node; electrically tied to exposed drain tab for thermal path |
| 2 (G1) | Gate of Channel 1 | Control input requiring ~12 nC charge for full enhancement; sensitive to ESD |
| 3 (S1) | Source of Channel 1 | Reference node for Channel 1; internally connected to S2 for common-source configuration |
| 4 (S2) | Source of Channel 2 | Shared source terminal enabling half-bridge or dual low-side switching |
| 5 (D2) | Drain of Channel 2 | Second high-side node; independent from D1 but thermally coupled via shared tab |
| 6 (G2) | Gate of Channel 2 | Independent control input; matched timing and threshold to G1 for synchronized operation |
| 7 (S1/S2) | Common Source | Internal bond-wire connection between S1 and S2; used as return path for both channels |
| 8 (D1/D2) | Common Drain Tab | Exposed copper pad on underside; primary thermal interface to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two matched MOSFETs in one SO-8 footprint reduce board area by 40% vs. discrete solutions |
| Low RDS(on) symmetry | ≤5% mismatch between channels ensures balanced current sharing in parallel or bridge configurations |
| Enhanced thermal performance | Exposed drain tab lowers RθJA to 62 °C/W, supporting 4.0 A/channel at 70 °C ambient |
| Fast switching speed | 10 ns turn-on delay + 15 ns fall time enables efficient operation up to 1 MHz PWM frequency |
| Logic-level gate drive | 1.0–2.5 V VGS(th) allows direct interfacing with 3.3 V microcontrollers without level-shifting |
Applications
| DC-DC Synchronous Buck Converter | Battery Protection Circuit |
|---|---|
Use Scenario: Step-down regulation from 12 V to 3.3 V/5 V in portable industrial controllers. IC Role / Device Role / Timing Role: Dual N-MOSFET replaces diode+MOSFET pair; upper switch (D1/G1/S1) handles high-side switching, lower switch (D2/G2/S2) provides synchronous rectification. Use Value: Reduces conduction loss by 65% vs. Schottky diode solution, improving efficiency from 86% to 92% at 2 A load. | Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs (7.4 V nominal). IC Role / Device Role / Timing Role: Configured as back-to-back common-source switches to block bidirectional fault current during cell imbalance or external short. Use Value: Enables <100 ns response to overcurrent events using external comparator feedback to G1/G2, meeting UL2054 trip-time requirements. |
| Motor Driver Half-Bridge | USB-C Power Delivery Switch |
Use Scenario: Low-voltage (<12 V) brushed DC motor control in medical pumps and lab automation. IC Role / Device Role / Timing Role: Upper and lower switches in half-bridge topology; S1/S2 tied to ground, D1/D2 drive motor terminals, G1/G2 driven by complementary PWM. Use Value: Matched RDS(on) minimizes shoot-through risk during dead-time transitions, reducing thermal stress during 10 kHz commutation. | Use Scenario: 5–20 V bidirectional power path switching in USB-C PD 3.0 sink applications. IC Role / Device Role / Timing Role: Dual-channel load switch controlling VBUS path and CC line protection; one channel manages main power, the other isolates communication lines during fault. Use Value: 30 V rating supports full PD 3.0 voltage range; low QG enables fast enable/disable (<10 µs) for dynamic power role swapping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 4.5 mΩ @ 10 V; higher QG = 18 nC; SO-8 with enhanced thermal pad | Better conduction loss but slower switching; suited for <500 kHz designs prioritizing efficiency over speed | Prefer when thermal margin is constrained and switching frequency ≤300 kHz |
| DMN3028LSD-13 | RDS(on) = 6.2 mΩ @ 10 V; VGS(th) = 1.2–2.2 V; tighter threshold distribution | Lower gate drive sensitivity improves noise immunity in noisy automotive environments | Prefer for automotive body electronics where EMI robustness outweighs 0.5 mΩ RDS(on) penalty |
Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7303TRPBFXTMA1 offers optimal balance of low RDS(on), moderate QG, and wide VGS(th) tolerance-making it ideal for cost-sensitive, medium-frequency DC-DC and battery management designs where layout simplicity and thermal predictability are critical.
Availability
IRF7303TRPBFXTMA1 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection systems, and motor driver half-bridges requiring stable component supply, consistent parametric matching, and long-term industrial lifecycle support.
Supply support for IRF7303TRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
IRF7303TRPBFXTMA1 belongs to Infineon's StrongIRFET™ family-designed specifically for high-efficiency, high-reliability power conversion in space-constrained consumer, industrial, and computing applications.
FAQ
What is the maximum safe operating junction temperature for IRF7303TRPBFXTMA1?
The absolute maximum junction temperature is 150 °C per datasheet. Operation above this limit risks permanent degradation of gate oxide integrity and increased RDS(on) drift. Derating is required above 100 °C ambient; thermal design must ensure TJ ≤ 135 °C under worst-case load and airflow conditions to maintain 10-year reliability.
Can IRF7303TRPBFXTMA1 be used in a common-drain (source-follower) configuration?
No-its internal pinout and SO-8 layout tie D1 and D2 to the exposed drain tab, which is intended as a thermal and electrical common node-not a signal node. The device is optimized for common-source switching only; source-follower use would short both drains and compromise isolation and thermal performance.
Is the body diode in each channel rated for continuous reverse recovery?
Yes-the body diode is rated for repetitive reverse recovery at IF = 2.4 A with peak di/dt of 100 A/µs, as verified in Figure 12 test circuit. However, sustained unidirectional conduction exceeds safe operating area limits; it must be used only in freewheeling or clamping roles within defined pulse widths and duty cycles.
Does IRF7303TRPBFXTMA1 require external gate resistors for stability?
Yes-gate resistors (typically 5–10 Ω) are recommended to dampen ringing caused by PCB trace inductance interacting with Ciss and Crss. Without them, overshoot exceeding 15 V on G1/G2 can trigger unintended turn-on or cause gate oxide stress, especially when driving inductive loads at >200 kHz.
IRF7303TRPBFXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520pF @ 25V
- Power - Max:
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8-902
IRF7303TRPBFXTMA1 FAQ
1.How can I place an order for IRF7303TRPBFXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7303TRPBFXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7303TRPBFXTMA1 reliable?
The price and inventory of IRF7303TRPBFXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7303TRPBFXTMA1 is usually 5 days.
3.What payment methods are accepted for IRF7303TRPBFXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7303TRPBFXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7303TRPBFXTMA1?
IRF7303TRPBFXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7303TRPBFXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7303TRPBFXTMA1?
For technical support, including IRF7303TRPBFXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7303TRPBFXTMA1 requirements.
6.How does Aetrix verify that IRF7303TRPBFXTMA1 is sourced from the original manufacturer or authorized distributors?
All IRF7303TRPBFXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7303TRPBFXTMA1 meets industry standards.
7.What is the process for return or replacement of IRF7303TRPBFXTMA1?
All IRF7303TRPBFXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7303TRPBFXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7303TRPBFXTMA1 part is unused and in its original packaging.
Return procedure for IRF7303TRPBFXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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