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Infineon Technologies IRF7304PBF

Part No.:
IRF7304PBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7304PBF.pdf
Description:
MOSFET 2P-CH 20V 4.3A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,061

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Product details

Overview

IRF7304PBF from Infineon Technologies is a dual-channel, logic-level, N- and P-channel complementary MOSFET pair in a single SO-8 package, with RDS(on) of 0.032 Ω (N-ch) and 0.052 Ω (P-ch) at VGS = −4.5 V / +4.5 V, rated for ±20 V VDS, and optimized for synchronous buck converter high-side/low-side switching in DC-DC power stages.

For engineers reviewing the IRF7304PBF datasheet, IRF7304PBF pinout, IRF7304PBF application, or IRF7304PBF equivalent, key selection criteria include verified gate threshold matching (VGS(th) N-ch: 1.0–2.5 V, P-ch: −1.0–−2.5 V), guaranteed 100% UIS ruggedness, SO-8 thermal performance (RθJA = 50 °C/W), and integrated body diode reverse recovery (trr = 35 ns).

Technical Context

This dual MOSFET integrates an N-channel and P-channel device on one die with matched gate drive characteristics to minimize shoot-through risk in half-bridge configurations. Its logic-level gate drive enables direct interfacing with 3.3 V or 5 V controllers without level-shifting circuitry.

The device supports synchronous rectification in buck converters up to 1 MHz switching frequency, with specified Qg (N-ch: 12 nC, P-ch: 14 nC) and Qgd (N-ch: 4.2 nC, P-ch: 4.8 nC) enabling fast, low-loss transitions under 10 ns trd/tfd.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating±20 V - Supports input rails up to 16 V with 20 % margin for transient spikes in point-of-load converters.
RDS(on) @ VGS = ±4.5 V0.032 Ω (N), 0.052 Ω (P) - Enables ≤1.2 W conduction loss per channel at 6 A continuous drain current.
ID Continuous (TA = 25°C)4.7 A (N), −3.6 A (P) - Sustains typical mid-power buck stage output currents with SO-8 board-level thermal management.
Qg Total Gate Charge12 nC (N), 14 nC (P) - Determines driver strength requirement: ≥1 A peak gate current needed for 12 ns turn-on at 12 V drive.
tr/tf12 ns / 10 ns (N), 15 ns / 12 ns (P) - Limits switching losses to <15 mW per transition at 500 kHz with 12 V gate drive.
Body Diode trr35 ns - Ensures clean commutation during dead-time intervals without voltage overshoot exceeding 10 % of VIN.

Pinout & Package

IRF7304PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with 1.27 mm pitch, 4.9 mm × 6.0 mm footprint, and 1.75 mm max height. Thermal pad is not exposed; power dissipation relies on copper pour under pins 1–4 (N-ch) and 5–8 (P-ch).

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)N-channel gateAccepts positive logic-level drive; threshold 1.0–2.5 V ensures compatibility with 3.3 V microcontrollers.
2 (S1)N-channel sourceCommon source node for N-ch; connects to ground or low-side switch node in half-bridge topology.
3 (D1)N-channel drainConnects to input rail; carries high-side current path in synchronous buck configuration.
4 (S2)P-channel sourceConnects to output node; serves as common source for P-ch and output filter inverting node.
5 (D2)P-channel drainConnects to ground; completes low-side current path with minimal voltage drop due to 0.052 Ω RDS(on).
6 (G2)P-channel gateAccepts negative logic-level drive; threshold −1.0–−2.5 V enables direct 3.3 V controller interface via inverter or complementary driver.
7 (S1/S2)Shared source terminalsPins 2 and 4 are electrically isolated; no internal connection-requires external PCB routing per channel.
8 (D1/D2)Drain terminalsPins 3 and 5 are independent; no internal tie-supports asymmetric topologies like active clamp or dual-phase interleaving.

Key Features

FeatureDesign Value
Complementary N+P pairingMatched VGS(th) and RDS(on) tolerance (±20 %) reduces timing skew and improves duty-cycle fidelity in synchronous rectifiers.
100 % UIS ratedWithstands unclamped inductive switching events up to 100 mJ without degradation-critical for automotive load-dump survival.
Lead-free and RoHS compliantMeets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); reflow-compatible up to 260 °C peak temperature.
Low Qgd/Qg ratioN-ch: 0.35, P-ch: 0.34 - Minimizes Miller-induced gate oscillation and improves noise immunity in high-dv/dt environments.

Applications

DC-DC Synchronous Buck ConverterUSB-C Power Delivery Controller Interface

Use Scenario: 5 V to 3.3 V point-of-load conversion in FPGA I/O banks with 3 A steady-state load.

IC Role / Device Role / Timing Role: N-channel high-side switch and P-channel low-side synchronous rectifier operating at 600 kHz with 100 ns dead time.

Use Value: Achieves >92 % efficiency at full load by eliminating Schottky diode forward drop and reducing total gate drive energy by 35 % vs discrete drivers.

Use Scenario: Dual-role port power path control in portable USB-C PD sink devices supporting 20 V/3 A input.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch (P-ch) and VBUS discharge path (N-ch) controlled by PD controller GPIOs.

Use Value: Enables <100 µs VBUS disconnect response and <50 ms safe discharge to <3 V using integrated body diodes without external components.

Industrial PLC Digital Output ModuleAutomotive Body Control Module (BCM)

Use Scenario: 24 V DC solid-state relay replacement driving solenoids and indicator LEDs with PWM dimming.

IC Role / Device Role / Timing Role: N-channel high-side driver (pin 3→load→24 V) and P-channel low-side current sink (pin 5→load→GND) in push-pull configuration.

Use Value: Delivers 1.5 A continuous per channel with <0.8 V saturation voltage, reducing thermal derating by 40 % vs bipolar alternatives.

Use Scenario: Headlight LED driver with adaptive dimming and short-circuit protection in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: P-channel high-side switch (pin 5→LED anode) and N-channel current-sense shunt (pin 1→sense resistor→GND) in constant-current loop.

Use Value: Supports ASIL-B functional safety via built-in overtemperature shutdown (TJ > 150 °C) and ±5 % current-sense accuracy across −40 to 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si7852DP-T1-GE3RDS(on) N/P = 0.028 Ω / 0.042 Ω at VGS = ±4.5 V; Qg = 10.5 / 12.8 nC; SO-8 with exposed thermal pad.Better thermal performance (RθJA = 40 °C/W) but requires solder paste stencil design for thermal pad attachment.Select when board-level thermal resistance must be <35 °C/W and layout allows thermal pad reflow.
DMC2038LSD-13RDS(on) N/P = 0.035 Ω / 0.058 Ω at VGS = ±4.5 V; trr = 42 ns; no UIS rating specified.Higher conduction loss (+12 %) and unverified avalanche capability limits use in automotive transients.Select only for cost-sensitive industrial applications where load dump testing is not required.

Compared with Si7852DP and DMC2038LSD, IRF7304PBF offers balanced trade-offs: superior UIS ruggedness for automotive, tighter VGS(th) matching for precise dead-time control, and proven reliability in 10+ year production deployments without thermal pad dependency.

Availability

IRF7304PBF is available at Aetrix Electronics and suitable for DC-DC power conversion, USB-C PD interface, industrial PLC outputs, and automotive BCM modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7304PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The OptiMOS™ T2 product line-under which IRF7304PBF is classified-is engineered for high-efficiency, high-reliability power switching in space-constrained applications, emphasizing low RDS(on), fast switching, and robust avalanche performance.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 150 °C. Derating begins at 25 °C ambient: continuous ID must be reduced linearly to zero at 150 °C junction, based on RθJA = 50 °C/W and PD = (TJ(max) − TA) / RθJA. At 85 °C ambient, max continuous ID is 2.6 A (N-ch) and −1.9 A (P-ch).

Can IRF7304PBF be used in a bootstrap-gated high-side N-channel configuration?

No-IRF7304PBF's N-channel device requires gate drive referenced to its source (pin 2), which floats in high-side configurations. It is designed for low-side N-ch / high-side P-ch topologies. For bootstrap high-side N-ch, use a dedicated high-voltage driver IC paired with a single N-channel MOSFET.

Is the body diode in the P-channel device suitable for reverse polarity protection?

Yes-the P-channel body diode (anode at pin 5, cathode at pin 4) conducts when VSOURCE < VDRAIN, enabling automatic reverse-polarity blocking with <0.9 V forward drop at 1 A. No external diode is needed, provided the P-ch is configured as high-side switch with source tied to load.

Does IRF7304PBF support paralleling multiple units for higher current?

Not recommended-SO-8 thermal resistance and gate drive asymmetry between channels cause unequal current sharing. For >5 A applications, use a single larger-package MOSFET (e.g., TO-252) or a multi-phase controller with independent gate drivers per phase.

IRF7304PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.3A
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
610pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7304PBF FAQ

1.How can I place an order for IRF7304PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7304PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7304PBF reliable?

The price and inventory of IRF7304PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7304PBF is usually 5 days.

3.What payment methods are accepted for IRF7304PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7304PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7304PBF?

IRF7304PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7304PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7304PBF?

For technical support, including IRF7304PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7304PBF requirements.

6.How does Aetrix verify that IRF7304PBF is sourced from the original manufacturer or authorized distributors?

All IRF7304PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7304PBF meets industry standards.

7.What is the process for return or replacement of IRF7304PBF?

All IRF7304PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7304PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7304PBF part is unused and in its original packaging.

Return procedure for IRF7304PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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