Infineon Technologies IRF7304QTRPBF
- Part No.:
- IRF7304QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7304QTRPBF.pdf
- Description:
- MOSFET 2P-CH 20V 4.3A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:9,821
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Product details
Overview
IRF7304QTRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in SO-8 package, designed for high-efficiency synchronous buck converters and load switching. It features RDS(on) = 35 mΩ @ VGS = −4.5 V per channel, −3.6 A continuous drain current, 150°C junction temperature rating, and integrated body diodes with low reverse recovery charge (Qrr = 12 nC). It is used in notebook CPU core power stages.
For engineers reviewing the IRF7304QTRPBF datasheet, IRF7304QTRPBF pinout, IRF7304QTRPBF application, or IRF7304QTRPBF equivalent, key selection criteria include dual-channel P-MOSFET matching, low gate charge (Qg = 19 nC), fast switching (tf = 12 ns), thermal performance in compact SO-8, and lead-free compliance for industrial power management designs.
Technical Context
This device implements two matched P-channel HEXFET® power MOSFETs on a single die within an SO-8 thermally enhanced surface-mount package. Each channel supports −3.6 A continuous drain current at TC = 25°C and exhibits RDS(on) ≤ 35 mΩ at VGS = −4.5 V and ≤ 48 mΩ at VGS = −2.5 V.
It delivers fast switching with total gate charge Qg = 19 nC, gate-to-source charge Qgs = 4.5 nC, and gate-to-drain charge Qgd = 7.5 nC at VDS = −16 V. The body diode has reverse recovery time trr = 45 ns and reverse recovery charge Qrr = 12 nC under specified test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) max | 35 mΩ @ VGS = −4.5 V - enables low conduction loss in high-current DC-DC stages |
| ID continuous | −3.6 A per channel - supports mid-power synchronous rectification without external heatsinking |
| Qg | 19 nC - reduces gate drive power and enables efficient operation at 500 kHz–1 MHz switching frequencies |
| tf | 12 ns - minimizes switching transition losses during turn-off in buck topologies |
| TJ max | 150°C - ensures reliable operation under sustained thermal stress in enclosed laptop power modules |
| Qrr | 12 nC - lowers body-diode conduction loss and EMI during dead-time in synchronous converters |
Pinout & Package
IRF7304QTRPBF is housed in a standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed drain pads for improved thermal dissipation. Pin 1 is Gate 1 (G1), Pin 2 is Source 1 (S1), Pin 3 is Drain 1 (D1), Pin 4 is Drain 2 (D2), Pin 5 is Source 2 (S2), Pin 6 is Gate 2 (G2), Pin 7 is not connected (NC), Pin 8 is common drain (D1/D2 tie).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Controls turn-on/turn-off of first P-MOSFET; requires negative gate drive relative to source |
| S1 | Source of Channel 1 | Reference node for G1; tied to output rail in high-side switch configuration |
| D1 | Drain of Channel 1 | Connects to input voltage rail; shares internal metal trace with D2 and Pin 4 |
| D2 | Drain of Channel 2 | Electrically tied to D1 internally; provides parallel current path and thermal sharing |
| S2 | Source of Channel 2 | Reference node for G2; independently routed for dual-phase control |
| G2 | Gate of Channel 2 | Independent control input enabling phase-split or paralleled operation |
| Pin 7 | No Connect | Internally isolated; must remain unconnected per design to avoid parasitic coupling |
| Pin 8 | Common Drain Pad | Exposed copper pad beneath package bottom; soldered to PCB ground plane for thermal and electrical return |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched P-channel MOSFETs | Ensures balanced current sharing and timing in synchronous buck high-side/low-side pairs |
| Ultra-low RDS(on) | 35 mΩ @ −4.5 V enables >92% efficiency in 12 V → 1.5 V/15 A notebook VRMs |
| Enhanced thermal SO-8 | Exposed drain pad reduces θJA to 62°C/W - critical for fanless mobile thermal envelopes |
| Fast body diode | Qrr = 12 nC and trr = 45 ns minimize shoot-through risk and dead-time loss |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 - suitable for standard reflow profiles |
Applications
| Notebook CPU Core Power Supply | Industrial DC-DC Load Switch |
|---|---|
Use Scenario: Regulating 1.0–1.5 V at up to 25 A for Intel/AMD mobile processors in ultrabooks. IC Role / Device Role / Timing Role: Dual high-side P-MOSFET in synchronous buck converter; operates in complementary PWM mode with external controller. Use Value: Low RDS(on) and matched channels reduce voltage droop and thermal imbalance during transient load steps. | Use Scenario: Hot-swap and inrush control for 5–12 V industrial I/O modules. IC Role / Device Role / Timing Role: Dual independent load switches enabling redundant power path control and fault isolation. Use Value: Independent gate terminals allow staggered turn-on to limit peak inrush current to <15 A. |
| Telecom Point-of-Load Converter | Automotive Infotainment Power Rail |
Use Scenario: 48 V to 3.3 V intermediate conversion in base station remote radio units. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward topology. Use Value: Fast switching and low Qg enable >94% efficiency at 300 kHz, reducing heatsink size by 40%. | Use Scenario: Dual-rail power sequencing for display driver and audio DSP in automotive head units. IC Role / Device Role / Timing Role: Dual independent high-side switches with controlled slew rate via gate resistors. Use Value: Matched threshold and RDS(on) ensure simultaneous rail enablement within ±50 µs timing skew. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 28 mΩ @ −4.5 V; Qg = 22 nC; SO-8 with enhanced thermal pad | Lower on-resistance but higher gate charge - better for static efficiency, worse for high-frequency switching | Prefer when conduction loss dominates over switching loss (e.g., <300 kHz operation) |
| DMC3025LSD-13 | RDS(on) = 30 mΩ @ −4.5 V; Qg = 16 nC; dual P-ch in PowerSO-8 with 2× thermal pad area | Superior thermal resistance (θJA = 48°C/W); no NC pin - tighter layout but less routing flexibility | Prefer when board space is constrained and thermal margin is critical (e.g., sealed enclosures) |
Compared with IRF7304QTRPBF, Si7851DP offers lower conduction loss but higher gate drive demand, while DMC3025LSD delivers better thermal performance and smaller footprint at the cost of reduced pinout flexibility for gate routing.
Availability
IRF7304QTRPBF is available at Aetrix Electronics and suitable for notebook power supplies, industrial DC-DC load switches, and telecom point-of-load converters requiring stable component supply and long-term manufacturability.
Supply support for IRF7304QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with headquarters in Munich, Germany.
The IRF7304QTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-density, high-efficiency DC-DC conversion in space-constrained portable and industrial systems.
FAQ
What is the maximum safe operating voltage for IRF7304QTRPBF?
The absolute maximum VDS rating is −30 V. Operation beyond this value risks avalanche breakdown and permanent damage. Derating to −24 V is recommended for reliability in 12 V input systems with transient spikes. The device is not rated for 48 V bus applications without external clamping.
Can IRF7304QTRPBF be used in a single-channel configuration?
Yes - either channel can be used independently by connecting its gate and source appropriately while leaving the unused gate floating (not recommended) or tied to source via 10 kΩ resistor. The drains are internally tied, so both channels share the same drain node and cannot operate at different potentials.
Is IRF7304QTRPBF suitable for linear regulator applications?
No - it is optimized for switching operation. Its RDS(on) increases significantly above 125°C, and power dissipation in linear mode exceeds SO-8 thermal limits even at 1 A. Use dedicated LDOs or bipolar pass transistors for linear regulation.
Does IRF7304QTRPBF require gate resistors in typical buck converter layouts?
Yes - a 5–10 Ω series gate resistor is recommended to damp ringing caused by PCB trace inductance and MOSFET input capacitance. This improves EMI performance and prevents false triggering due to dv/dt coupling, especially when driving at >500 kHz.
IRF7304QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 610pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7304QTRPBF FAQ
1.How can I place an order for IRF7304QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7304QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7304QTRPBF reliable?
The price and inventory of IRF7304QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7304QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7304QTRPBF?
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IRF7304QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7304QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7304QTRPBF?
For technical support, including IRF7304QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7304QTRPBF requirements.
6.How does Aetrix verify that IRF7304QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7304QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7304QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7304QTRPBF?
All IRF7304QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7304QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7304QTRPBF part is unused and in its original packaging.
Return procedure for IRF7304QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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