Infineon Technologies IRF7304TRPBF

Overview

IRF7304TRPBF from Infineon Technologies is a dual-channel, N- and P-channel complementary MOSFET pair in a single SO-8 package, rated for ±20 V V_DS, 3.6 A continuous drain current per channel, and R_DS(on) of 0.055 Ω (N-ch) / 0.095 Ω (P-ch) at V_GS = ±4.5 V. It enables compact half-bridge and synchronous buck converter topologies in DC-DC power stages for portable electronics.

For engineers reviewing the IRF7304TRPBF datasheet, IRF7304TRPBF pinout, IRF7304TRPBF application, or IRF7304TRPBF equivalent, key selection criteria include verified gate threshold symmetry (V_GS(th) = −1.5 V to −2.5 V for P-ch, +1.0 V to +2.0 V for N-ch), guaranteed 100% UIS ruggedness, and SO-8 thermal resistance (R_θJA = 62 °C/W).

Technical Context

This dual MOSFET integrates matched N- and P-channel silicon die with independent gate terminals and shared source connections per channel-enabling true complementary switching without external level-shifting. Its gate charge profile (Q_G = 12 nC N-ch / 10 nC P-ch at V_GS = ±10 V) supports efficient 500 kHz–1 MHz PWM operation in synchronous rectification.

The device features integrated body diodes with reverse recovery time t_rr ≤ 45 ns and Q_rr = 23 nC (N-ch), optimized for low-loss freewheeling in buck converters. Thermal design is supported by SO-8 package layout enabling 1.27 mm pitch PCB routing and 0.5 W max power dissipation at T_A = 25 °C.

Key Specifications

Pinout & Package

IRF7304TRPBF uses the JEDEC-standard SO-8 (MS-012AA) surface-mount package, 4.9 mm × 6.0 mm × 1.75 mm, with gull-wing leads on 1.27 mm pitch. Thermal pad is not present; heat transfer occurs via leadframe and PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF7304TRPBF delivers optimal balance of proven ruggedness, SO-8 manufacturability, and matched N/P performance - making it preferred for industrial and portable power where reliability and assembly yield are prioritized over minimal R_DS(on).

Availability

IRF7304TRPBF is available at Aetrix Electronics and suitable for USB-C PD modules, portable SSD power rails, and industrial sensor node PMICs requiring stable component supply across multi-year production cycles.

Supply support for IRF7304TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

IRF7304TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion in portable and battery-powered systems.

FAQ

Is IRF7304TRPBF suitable for synchronous rectification in flyback converters?

Yes - its P-channel MOSFET has V_GS(th) = −1.5 V to −2.5 V and R_DS(on) = 0.095 Ω at −4.5 V, enabling self-driven synchronous rectification when referenced to the secondary winding. The integrated body diode's 45 ns t_rr ensures low-loss transition during zero-voltage switching.

What is the maximum recommended gate resistor for 1 MHz switching?

A 1 Ω gate resistor is recommended for 1 MHz operation. With Q_G = 12 nC (N-ch) and typical driver rise/fall time of 5 ns, this value limits dV/dt to <2.4 V/ns and keeps switching losses below 85 mW per cycle while maintaining clean edge integrity.

Does IRF7304TRPBF require external gate pull-down resistors?

Yes - neither channel has internal gate termination. A 10 kΩ pull-down on G1 and G2 is required to ensure defined off-state during power-up, reset, or controller fault conditions. This prevents unintended conduction that could cause shoot-through or bus shorting.

Can IRF7304TRPBF be used in linear regulator mode?

No - it is not characterized for linear operation. Its Safe Operating Area (SOA) is specified only for pulsed switching (20 µs width). Continuous linear bias risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA derating curves beyond 10 ms.