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Infineon Technologies IRF7306PBF
- Part No.:
- IRF7306PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7306PBF.pdf
- Description:
- MOSFET 2P-CH 30V 3.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,575
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Product details
Overview
IRF7306PBF from Infineon Technologies (formerly International Rectifier) is a dual-channel P-channel MOSFET in SO-8 package, rated for −30 V VDS, 4.5 A continuous drain current per channel, and 0.05 Ω typical RDS(on) at VGS = −10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7306PBF datasheet, IRF7306PBF pinout, IRF7306PBF application, or IRF7306PBF equivalent, this device supports high-efficiency dual low-side switching with integrated body diodes, thermal stability up to 150 °C junction temperature, and fast gate charge characteristics critical for 500 kHz–1 MHz power stages.
Technical Context
This dual P-MOSFET integrates two identical enhancement-mode silicon devices sharing a common source terminal configuration (D1/S2/G1 and D2/S1/G2), enabling complementary half-bridge or independent load-switch operation. Its gate threshold voltage (VGS(th)) ranges from −1.0 V to −2.5 V, ensuring reliable turn-on with standard logic-level drive.
The device uses trench-gate process technology to achieve low RDS(on) and reduced QG (21 nC typical), supporting efficient switching in synchronous buck converters and OR-ing applications where reverse current blocking and low conduction loss are essential.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V maximum - defines safe operating voltage range for negative-rail switching in battery-powered systems |
| ID (continuous) | 4.5 A per channel at TC = 25 °C - enables compact 5–12 V input DC-DC designs without forced air cooling |
| RDS(on) | 0.05 Ω typical at VGS = −10 V - reduces conduction loss to <1 W per channel at 4.5 A |
| QG | 21 nC typical - allows fast switching with moderate gate driver strength (e.g., TC4427) |
| TJ max | 150 °C - supports operation in sealed enclosures or high-ambient industrial environments |
| Package | SO-8 - surface-mount footprint compatible with automated assembly and thermal vias under exposed pad |
Pinout & Package
IRF7306PBF is housed in an SO-8 package with exposed drain pad for enhanced thermal dissipation. Pin numbering follows JEDEC MS-012AA outline; top view shows pins 1–8 clockwise from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls turn-on/off of first P-MOSFET; requires negative VGS relative to S1 |
| 2 (S2) | Source of Channel 2 | Common node between both channels; tied to system ground or negative rail reference |
| 3 (D2) | Drain of Channel 2 | Switched output node for second channel; connects to load or inductor |
| 4 (D1) | Drain of Channel 1 | Switched output node for first channel; used for primary switching path |
| 5 (G2) | Gate of Channel 2 | Independent control input for second P-MOSFET; isolated from G1 |
| 6 (S1) | Source of Channel 1 | Common source node; electrically connected to pin 2 (S2) internally |
| 7, 8 (D1/D2 Exposed Pad) | Thermal Drain / Electrical Drain | Internally connected to both drains; must be soldered to PCB copper for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables single-package synchronous rectification or dual independent load switches without external level-shifting |
| Low RDS(on) (0.05 Ω) | Minimizes I²R losses in portable power rails, extending battery runtime in 3.3–12 V systems |
| Fast body diode recovery (trr = 45 ns) | Reduces switching loss and EMI in hard-switched topologies by limiting reverse recovery charge |
| Lead-free and RoHS-compliant | Meets global environmental compliance requirements for industrial and consumer electronics manufacturing |
Applications
| Battery Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Over-discharge and short-circuit protection in Li-ion battery packs. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back switch controlling charge/discharge paths with reverse current blocking. Use Value: Integrated body diodes eliminate need for external Schottky diodes; 0.05 Ω RDS(on) limits voltage drop to <225 mV at 4.5 A. | Use Scenario: High-efficiency 5 V → 3.3 V step-down conversion in embedded controllers. IC Role / Device Role / Timing Role: Lower-side synchronous rectifier replacing catch diode in buck topology. Use Value: Reduces conduction loss by >60% vs. 40 V Schottky diode; supports >92% efficiency at 2 A load. |
| OR-ing Controller | Hot-Swap Power Distribution |
Use Scenario: Redundant 12 V power supply selection in telecom line cards. IC Role / Device Role / Timing Role: Each channel independently controls one supply rail; body diode provides fail-safe forward conduction. Use Value: Low VF (0.85 V typ.) and fast trr prevent cross-conduction during supply switchover. | Use Scenario: Inrush-limited insertion of PCIe add-in cards into live backplanes. IC Role / Device Role / Timing Role: Load switch for controlled ramp-up of 3.3 V/12 V auxiliary rails. Use Value: Gate threshold (−1.0 to −2.5 V) allows direct control from microcontroller GPIO without level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7951DP-T1-GE3 | RDS(on) = 0.045 Ω @ −10 V; QG = 24 nC; SO-8 with same pinout | Marginally lower on-resistance but higher gate charge increases switching loss above 300 kHz | Prefer for ultra-low-loss <1 A applications; verify gate driver capability for 24 nC charge |
| DMC3025LSD-13 | RDS(on) = 0.032 Ω @ −10 V; 30 V rating; different pinout (G1/S1/D1/D2/S2/G2) | Requires PCB layout revision due to swapped source/drain pin assignments | Select only when RDS(on) reduction justifies redesign; not drop-in compatible |
Compared with Si7951DP-T1-GE3 and DMC3025LSD-13, IRF7306PBF offers balanced trade-offs between conduction loss, gate drive simplicity, and layout compatibility-making it optimal for cost-sensitive, medium-frequency (<500 kHz) power management designs.
Availability
IRF7306PBF is available at Aetrix Electronics and suitable for battery protection circuits, synchronous buck converters, OR-ing controllers, and hot-swap power distribution requiring stable component supply and long-term production continuity.
Supply support for IRF7306PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
IRF7306PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency DC-DC conversion and robust load switching in space-constrained, thermally demanding applications.
FAQ
What is the maximum pulsed drain current rating for IRF7306PBF?
The absolute maximum pulsed drain current (IDM) is −22 A per channel, specified for pulse width ≤ 100 µs and duty cycle ≤ 1%. This rating assumes case temperature ≤ 25 °C and proper PCB thermal design with ≥2 cm² of 2-oz copper connected to the exposed drain pad.
Can IRF7306PBF be used in linear regulation mode?
No-IRF7306PBF is not characterized or guaranteed for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows limited DC capability beyond 1 A at VDS > 10 V; sustained linear use risks thermal runaway due to positive temperature coefficient of RDS(on).
Is the SO-8 package thermally enhanced?
Yes-the SO-8 package features an exposed drain pad (pins 7 and 8) that serves as both electrical connection and thermal interface. When soldered to ≥4 thermal vias filled with solder and connected to ≥2 cm² internal ground plane, junction-to-board thermal resistance drops to ~40 °C/W.
Does IRF7306PBF have avalanche energy rating?
No-IRF7306PBF is not rated for repetitive unclamped inductive switching (UIS) or single-pulse avalanche energy. The datasheet omits EAS specification; designers must implement external clamping (e.g., TVS or RCD snubber) in inductive load applications.
IRF7306PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7306PBF FAQ
1.How can I place an order for IRF7306PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7306PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7306PBF reliable?
The price and inventory of IRF7306PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7306PBF is usually 5 days.
3.What payment methods are accepted for IRF7306PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7306PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7306PBF?
IRF7306PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7306PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7306PBF?
For technical support, including IRF7306PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7306PBF requirements.
6.How does Aetrix verify that IRF7306PBF is sourced from the original manufacturer or authorized distributors?
All IRF7306PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7306PBF meets industry standards.
7.What is the process for return or replacement of IRF7306PBF?
All IRF7306PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7306PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7306PBF part is unused and in its original packaging.
Return procedure for IRF7306PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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