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Infineon Technologies IRF7306QTRPBF
- Part No.:
- IRF7306QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7306QTRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 3.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,555
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Product details
Overview
IRF7306QTRPBF from Infineon Technologies is a dual P-channel MOSFET in SO-8 package, designed for high-efficiency load switching and power management in DC-DC converters and battery protection circuits. It features RDS(on) = 35 mΩ @ VGS = −10 V (per channel), continuous drain current ID = −3.0 A per channel, and operates up to 150°C junction temperature.
For engineers reviewing the IRF7306QTRPBF datasheet, IRF7306QTRPBF pinout, IRF7306QTRPBF application, or IRF7306QTRPBF equivalent, key selection criteria include dual-channel P-MOSFET integration, low on-resistance at −4.5 V gate drive, thermal performance in compact surface-mount layout, and lead-free SO-8 compliance for industrial and portable power systems.
Technical Context
This device integrates two matched P-channel enhancement-mode MOSFETs in a single SO-8 package, sharing common source terminals (S1/S2) and independent gate/drain connections. Its symmetric dual topology supports synchronous rectification, OR-ing, and back-to-back switch configurations with gate threshold VGS(th) = −1.0 to −2.5 V and guaranteed turn-on at −4.5 V.
The MOSFETs exhibit fast switching characteristics: typical total gate charge QG = 12 nC, rise/fall times < 20 ns, and body diode reverse recovery time trr = 45 ns. Thermal resistance RθJA = 62°C/W enables stable operation under 1.5 W dissipation in standard PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) max | 35 mΩ @ VGS = −10 V - ensures low conduction loss in 5–12 V rail switching |
| ID continuous | −3.0 A per channel - supports dual 3 A load paths without derating at TJ ≤ 100°C |
| VDS max | −30 V - compatible with automotive 24 V nominal and industrial 24/30 V bus systems |
| VGS(th) | −1.0 to −2.5 V - enables reliable turn-on with standard logic-level gate drivers |
| QG typ | 12 nC - reduces gate drive power and enables >500 kHz PWM operation |
| RθJA | 62°C/W - allows 1.5 W dissipation on 1-in² 2-oz copper with minimal heatsinking |
| tr/tf | < 20 ns - minimizes switching transition losses in high-frequency DC-DC stages |
Pinout & Package
IRF7306QTRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads for enhanced thermal performance. Pin numbering follows top-view orientation: pins 1–4 (left side) and 5–8 (right side), with dual-channel symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | Gate 1 (G1), Source 1 (S1) | G1 controls first P-MOSFET; S1 is its source node - tied internally to common source plane |
| 3, 4 | Drain 1 (D1), Drain 2 (D2) | D1/D2 are isolated drain terminals - enable independent load connection per channel |
| 5, 6 | Source 2 (S2), Gate 2 (G2) | S2 shares metal plane with S1; G2 independently drives second P-MOSFET |
| 7, 8 | Drain 2 (D2), Source 1 (S1) | D2 repeated for symmetry; S1 repeated as common source reference point |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel configuration | Two matched MOSFETs in one SO-8 - eliminates board space and BOM count vs. discrete pairs |
| Ultra-low RDS(on) | 35 mΩ @ −10 V - cuts conduction loss by >40% vs. legacy P-MOSFETs at same voltage rating |
| Lead-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020 reflow profile - supports lead-free assembly without reliability penalty |
| 150°C maximum junction temperature | Enables operation in sealed enclosures or high-ambient environments without forced cooling |
| Fast body diode recovery | trr = 45 ns - reduces shoot-through risk and EMI in synchronous buck or OR-ing applications |
Applications
| Battery Protection Circuit | Load Switch for Industrial PLC |
|---|---|
Use Scenario: Dual MOSFET used in smart battery pack to block reverse current and enable/discharge control. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET switch providing bidirectional blocking and controlled discharge path. Use Value: RDS(on) ≤ 35 mΩ limits voltage drop to < 105 mV at 3 A, preserving battery runtime and thermal margin. | Use Scenario: Power sequencing of 24 V field I/O modules in programmable logic controllers. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent enable control of sensor and actuator rails. Use Value: Independent gate control (G1/G2) allows staggered power-up timing with < 100 ns skew between channels. |
| OR-ing Controller for Redundant Supplies | Synchronous Rectifier in Isolated DC-DC |
Use Scenario: Parallel 12 V power supplies in telecom shelf with automatic fault isolation. IC Role / Device Role / Timing Role: Dual P-MOSFET acting as ideal diode replacement with forward voltage sensing. Use Value: VGS(th) matching ±0.3 V ensures balanced current sharing across both channels during hot-swap events. | Use Scenario: Secondary-side rectification in 48 V–12 V isolated flyback converter. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: QG = 12 nC enables clean gate drive with 1 Ω series resistor, minimizing ringing at 300 kHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7951DP-T1-GE3 | RDS(on) = 42 mΩ @ −10 V; higher QG = 15 nC; same SO-8 footprint | Marginally higher conduction loss; less suitable for high-frequency (>1 MHz) sync rectification | Prefer when cost sensitivity outweighs 20% efficiency gain at full load |
| DMC3025LSD-13 | RDS(on) = 25 mΩ @ −10 V; lower VGS(th) = −0.9 V; requires tighter gate drive control | Better efficiency at light loads; higher risk of unintended turn-on with noisy gate traces | Choose for ultra-low-loss 5 V–12 V systems where gate noise immunity is managed |
Compared with Si7951DP-T1-GE3 and DMC3025LSD-13, IRF7306QTRPBF offers optimal balance of low RDS(on), robust gate threshold margin, and proven thermal behavior in SO-8 - making it preferred for industrial power management where reliability trumps marginal efficiency gains.
Availability
IRF7306QTRPBF is available at Aetrix Electronics and suitable for battery management systems, industrial PLC load switching, redundant power OR-ing, and isolated DC-DC synchronous rectification requiring stable component supply and long-term manufacturability.
Supply support for IRF7306QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The HEXFET® family - to which IRF7306QTRPBF belongs - was engineered for high-current, low-voltage power switching in space-constrained applications, emphasizing thermal robustness, gate drive simplicity, and ruggedness against repetitive avalanche stress.
FAQ
What is the maximum safe operating voltage for IRF7306QTRPBF?
The absolute maximum drain-to-source voltage (VDS) is −30 V. Operation above this rating risks irreversible avalanche breakdown, even for short pulses. Derating to −24 V is recommended for designs requiring >100,000-cycle reliability in 24 V industrial systems.
Can IRF7306QTRPBF be used with 3.3 V microcontroller GPIOs?
No - its VGS(th) range (−1.0 to −2.5 V) requires negative gate bias relative to source. A 3.3 V GPIO cannot pull the gate below source potential. A dedicated P-channel gate driver (e.g., TC4427 with inverting logic) or level-shifting circuit is required for logic-compatible control.
Is the SO-8 package thermally enhanced?
Yes - the SO-8 outline includes exposed drain pads (pins 3, 4, 5, and 8) that serve as primary thermal paths. When soldered to ≥1-in² 2-oz copper pour, RθJA improves from 62°C/W to ≤ 45°C/W, supporting sustained 2.2 A per channel at 70°C ambient.
Does IRF7306QTRPBF have integrated ESD protection?
No - it lacks on-chip ESD structures per the datasheet. External TVS diodes (e.g., SMAJ5.0A) must be placed at gate inputs, and handling requires Class 0 ESD protocols. Gate oxide failure can occur at < 100 V HBM if unprotected during PCB assembly.
IRF7306QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7306QTRPBF FAQ
1.How can I place an order for IRF7306QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7306QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7306QTRPBF reliable?
The price and inventory of IRF7306QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7306QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7306QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7306QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7306QTRPBF?
IRF7306QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7306QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7306QTRPBF?
For technical support, including IRF7306QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7306QTRPBF requirements.
6.How does Aetrix verify that IRF7306QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7306QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7306QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7306QTRPBF?
All IRF7306QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7306QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7306QTRPBF part is unused and in its original packaging.
Return procedure for IRF7306QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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